AFM907N
1
RF Device Data
NXP Semiconductors
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
Designed for handheld two--way radio applications with frequencies from
136 to 941 MHz. The high gain, ruggedness and wideband performance of this
device make it ideal for large--signal, common--source amplifier applications in
handheld radio equipment.
Wideband Performance (In 350–520 MHz reference circuit, 7.5 Vdc, TA=25C, CW)
Frequency
(MHz) (1)
Pin
(W)
Gps
(dB)
D
(%)
Pout
(W)
350 0.25 15.2 56.6 8.4
435 0.25 15.5 61.5 8.9
520 0.25 15.0 64.2 7.9
Narrowband Performance (7.5 Vdc, TA=25C, CW)
Frequency
(MHz)
Gps
(dB)
D
(%)
Pout
(W)
520 (2) 20.7 73.9 8.4
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal
Type VSWR
Pin
(dBm)
Test
Voltage Result
520 (2) CW > 65:1 at all
Phase Angles
21
(3 dB Overdrive)
10.8 No Device
Degradation
1. Measured in 350–520 MHz UHF broadband reference circuit (page 5).
2. Measured in 520 MHz narrowband RF test fixture (page 9).
Features
Characterized for operation from 136 to 941 MHz
Unmatched input and output allowing wide frequency range utilization
Integrated ESD protection
Integrated stability enhancements
Wideband — full power across the band
Exceptional thermal performance
Extreme ruggedness
High linearity for: TETRA, SSB
Typical Applications
Output stage VHF band handheld radio
Output stage UHF band handheld radio
Output stage for 700–800 MHz handheld radio
Document Number: AFM907N
Rev. 1, 05/2019
NXP Semiconductors
Technical Data
136–941 MHz, 8 W, 7.5 V
WIDEBAND
AIRFAST RF POWER LDMOS
TRANSISTOR
AFM907N
DFN 4 6
15
9
11
10
116
14
13
12
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
Note: Exposed backside of the package is
the source terminal for the transistor.
(Top View)
2
3
4
5
6
7
8
Gate
Gate
Gate
Gate
Drain
Drain
Drain
Drain
Figure 1. Pin Connections
2017, 2019 NXP B.
V
.
2
RF Device Data
NXP Semiconductors
AFM907N
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +30 Vdc
Gate--Source Voltage VGS –6.0, +12 Vdc
Operating Voltage VDD 0to12.5 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC–40 to +150 C
Operating Junction Temperature (1,2) TJ–40 to +150 C
Total Device Dissipation @ TC=25C
Derate above 25C
PD65.7
0.52
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 79C, 7.4 W CW, 7.5 Vdc, IDQ = 100 mA, 520 MHz
RJC 1.9 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 1C, passes 1000 V
Charge Device Model (per JESD22--C101) C3, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 C
Table 5. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =30Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =7.5Vdc,V
GS =0Vdc)
IDSS — — 2 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 nAdc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=110Adc)
VGS(th) 1.6 2.1 2.6 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.1Adc)
VDS(on) —0.12 —Vdc
Forward Transconductance
(VDS =7.5Vdc,I
D=3Adc)
gfs —9.8 — S
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =7.5Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —2.4 —pF
Output Capacitance
(VDS =7.5Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —55.2 —pF
Input Capacitance
(VDS =7.5Vdc,V
GS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —95.7 —pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)
AFM907N
3
RF Device Data
NXP Semiconductors
Table 5. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Narrowband Performance – 520 MHz (In NXP Narrowband 520 MHz RF Test Fixture, 50 ohm system) VDD =7.5Vdc,I
DQ = 100 mA,
Pin = 18.5 dBm, f = 520 MHz
Common--Source Amplifier Output Power Pout —8.4 — W
Drain Efficiency D—73.9 — %
Load Mismatch/Ruggedness (In NXP Narrowband 520 MHz RF Test Fixture, 50 ohm system) IDQ = 100 mA
Frequency
(MHz)
Signal
Type VSWR
Pin
(dBm) Test Voltage, VDD Result
520 CW > 65:1 at all Phase Angles 21
(3 dB Overdrive)
10.8 No Device Degradation
Table 6. Ordering Information
Device Tape and Reel Information Package
AFM907NT1 T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel DFN 4 6
4
RF Device Data
NXP Semiconductors
AFM907N
TYPICAL CHARACTERISTICS
1
100
042
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
10
Crss
Measured with 30 mV(rms)ac @ 1 MHz, VGS =0Vdc
Ciss
68 14
Coss
10 12
90
TJ, JUNCTION TEMPERATURE (C)
108
107
106
110 130 150
MTTF (HOURS)
109
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.nxp.com/RF/calculators.
1.5 Amps
1.8 Amps
VDD =7.5Vdc
ID=1.1Amps
100 120 140 160
Figure 3. MTTF versus Junction Temperature – CW
AFM907N
5
RF Device Data
NXP Semiconductors
350–520 MHz UHF BROADBAND REFERENCE CIRCUIT
Table 7. 350–520 MHz UHF Broadband Performance (In NXP UHF Broadband Reference Circuit,
50 ohm system) VDD =7.5Vdc,I
DQ = 200 mA, TA=25C, CW
Frequency
(MHz)
Pin
(W)
Gps
(dB)
D
(%)
Pout
(W)
350 0.25 15.2 56.6 8.4
435 0.25 15.5 61.5 8.9
520 0.25 15.0 64.2 7.9
6
RF Device Data
NXP Semiconductors
AFM907N
350--520 MHz UHF BROADBAND REFERENCE CIRCUIT — 0.83 1.88(21.1 mm 47.8 mm)
Figure 4. AFM907N UHF Broadband Reference Circuit Component Layout — 350–520 MHz
C7
C14
C1
C2
L1
L2
C4 C5
R1
R2
R3
B1
C6
C13
L4
L3
C16
C15
L6
L5
C8 C9
AFM907N
Rev. 0
C10
C3
J1
D93169
Q1
C12
C11
Table 8. AFM907N UHF Broadband Reference Circuit Component Designations and Values — 350–520 MHz
Part Description Part Number Manufacturer
B1 30 , 6 A Ferrite Bead MPZ2012S300AT000 TDK
C1, C12 100 pF Chip Capacitor ATC600F101JT250XT ATC
C2 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC
C3, C5 36 pF Chip Capacitor ATC600F360JT250XT ATC
C4, C8, C9 27 pF Chip Capacitor ATC600F270JT250XT ATC
C6 1F Chip Capacitor GRM21BR71H105KA12L Murata
C7 0.01 F Chip Capacitor C0805C103K5RAC Kemet
C10 18 pF Chip Capacitor ATC600F180JT250XT ATC
C11 9.1 pF Chip Capacitor ATC600F9R1BT250XT ATC
C13 240 pF Chip Capacitor ATC600F241JT250XT ATC
C14 2.2 F Chip Capacitor GRM31CR71H225KA88L Murata
C15 4.7 F 50 V Chip Capacitor GRM31CR71H475KA12L Murata
C16 0.01 F Chip Capacitor GRM21BR72A103KA01B Murata
J1 Right-Angle Breakaway Header (3 Pins) 22-28-8360 Molex
L1, L6 8.9 nH Inductor 0806SQ8N9 Coilcraft
L2 1.65 nH Inductor, 2 Turns 0906-2JLC Coilcraft
L3, L4 17 nH Inductor 0908SQ17N Coilcraft
L5 2.55 nH Inductor, 3 Turns 0906-3JLC Coilcraft
Q1 RF Power LDMOS Transistor AFM907N NXP
R1, R2 1.5 , 1/4 W Chip Resistor RC1206FR-071R5L Yageo
R3 51 , 1/4 W Chip Resistor CRCW120651R0FKEA Vishay
PCB Shengyi S1000--2, 0.020,r=4.8 D93169 MTL
AFM907N
7
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 350–520 MHz UHF BROADBAND
REFERENCE CIRCUIT
340
f, FREQUENCY (MHz)
Figure 5. Power Gain, Drain Efficiency and Output Power
versus Frequency at a Constant Input Power
4
70
D, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
Pout,OUTPUT
POWER (WATTS)
VDD =7.5Vdc,P
in =0.25W,I
DQ = 200 mA
25
23
21
19
17
15
13
11
9
7
5
360 380 400 420 440 540
50
40
30
6
8
10
12
0
Detail A
VDD =7.5Vdc
f = 435 MHz
Pin =24dBm
Pout, OUTPUT POWER (WATTS)
VGS, GATE--SOURCE VOLTAGE (VOLTS)
0.5 1.0 2.0
0.2
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 6. Output Power versus Gate--Source Voltage
Pout, OUTPUT POWER (WATTS)
2.5 3.0 3.5 4.0
10
8
6
4
2
01.5 2.5
0.4
0.6
0.8
1.0
1.2
Figure 7. Power Gain, Drain Efficiency and Output
Power versus Input Power and Frequency
Pin, INPUT POWER (WATTS)
Gps, POWER GAIN (dB)
0
D
Gps
25 90
Pout
VDD =7.5Vdc,I
DQ = 200 mA
350 MHz
23
21
19
17
15
13
11
9
7
0.05 0.10
70
50
30
12
9
6
3
0
D, DRAIN
EFFICIENCY (%)
Pout,OUTPUT
POWER (WATTS)
60
Detail A
Gps
Pout
D
460 480 500 520
14
2.01.51.00.5
VDD =7.5Vdc
f= 435 MHz
Pin =24dBm
Pin =21dBm
Pin =21dBm
0.15 0.20 0.25 0.30 0.35
10
435 MHz
520 MHz
350 MHz
435 MHz
520 MHz
350 MHz
520 MHz
435 MHz
8
RF Device Data
NXP Semiconductors
AFM907N
350–520 MHz BROADBAND REFERENCE CIRCUIT
Zo=5
Zsource
Zload
f = 350 MHz
f = 520 MHz
f = 520 MHz
f = 350 MHz
f
MHz
Zsource
Zload
350 1.9 + j1.6 3.1 -- j0.7
360 2.0 + j1.9 3.2 -- j0.6
370 2.0 + j2.0 3.2 -- j0.5
380 2.1 + j2.2 3.3 -- j0.5
390 2.2 + j2.4 3.3 -- j0.5
400 2.3 + j2.6 3.2 -- j0.5
410 2.3 + j2.7 3.2 -- j0.5
420 2.4 + j2.8 3.1 -- j0.6
430 2.5 + j2.9 3.0 -- j0.6
440 2.6 + j3.0 2.8 -- j0.6
450 2.7 + j3.1 2.7 -- j0.6
460 2.7 + j3.2 2.5 -- j0.6
470 2.8 + j3.2 2.3 -- j0.5
480 2.9 + j3.3 2.1 -- j0.5
490 3.0 + j3.4 2.0 -- j0.4
500 3.0 + j3.4 1.8 -- j0.3
510 3.1 + j3.5 1.7 -- j0.1
520 3.2 + j3.5 1.5 + j0.04
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 8. Broadband Series Equivalent Source and Load Impedance — 350–520 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50
50
AFM907N
9
RF Device Data
NXP Semiconductors
520 MHz NARROWBAND RF TEST FIXTURE — 5.03.0(12.70 cm 7.62 cm)
Figure 9. AFM907N Narrowband RF Test Fixture Component Layout — 520 MHz
C1 C12
C4
C2
C3
C7
C6
R1
B1
C13
C14
L1
C9
L2
C8
C10
C11
C5
C15
D88764
AFM907N
Rev. 0
Table 9. AFM907N Narrowband RF Test Fixture Component Designations and Values — 520 MHz
Part Description Part Number Manufacturer
B1 Short RF Bead 2743019447 Fair-Rite
C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C2, C14 0.1 F Chip Capacitor CDR33BX104AKWS AVX
C3, C13 0.01 F Chip Capacitor C0805C103K5RAC Kemet
C4, C12 180 pF Chip Capacitor ATC100B181JT300XT ATC
C5 33 pF Chip Capacitor ATC100B130JT500XT ATC
C6 20 pF Chip Capacitor ATC100B200JT500XT ATC
C7 22 pF Chip Capacitor ATC100B220JT500XT ATC
C8, C9 16 pF Chip Capacitor ATC100B160JT500XT ATC
C10 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC
C11 30 pF Chip Capacitor ATC100B300JT500XT ATC
C15 330 F, 35 V Electrolytic Capacitor MCGPR35V337M10X16-RH Multicomp
L1 22 nH Inductor, 7 Turns B07TJLC Coilcraft
L2 5 nH Inductor, 2 Turns A02TKLC Coilcraft
R1 5.6 , 1/4 W Chip Resistor CRCW12065R60FKEA Vishay
PCB Rogers RO4350B, 0.030,r=3.66 D88764 MTL
10
RF Device Data
NXP Semiconductors
AFM907N
TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND RF TEST FIXTURE
Gps
Pout
D
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 10. Output Power versus Gate--Source Voltage
Pout, OUTPUT POWER (WATTS)
2.5 3.0 3.5 4.0
10
8
6
4
2
0
2.01.51.0
Pin = 18.5 dBm
Pin = 15.5 dBm
VDD =7.5Vdc
f= 520 MHz
12
0
Pin, INPUT POWER (WATTS)
Figure 11. Power Gain, Drain Efficiency and Output Power
versus Input Power
0
90
D, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
Pout,OUTPUT
POWER (WATTS)
VDD =7.5Vdc,I
DQ1 = 100 mA, f = 520 MHz
25
24
23
22
21
20
19
18
17
16
15
0.05 0.10 0.15 0.20 0.25
50
30
10
2
4
6
8
70
0.30 0.35 0.40
10
14
12
AFM907N
11
RF Device Data
NXP Semiconductors
520 MHz PRODUCTION TEST FIXTURE
f
MHz
Zsource
Zload
520 0.71 + j1.98 1.73 + j1.64
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 12. Series Equivalent Source and Load Impedance — 520 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50
50
12
RF Device Data
NXP Semiconductors
AFM907N
40.65
Figure 13. PCB Pad Layout for 16--Lead DFN 4 6
5.35
0.35
5.35 2.0 solder pad
with thermal via structure.
All dimensions in mm.
2.00 3.00
10 0.80
0.56
Figure 14. Product Marking
AFM907N
WLYW
AFM907N
13
RF Device Data
NXP Semiconductors
PACKAGE DIMENSIONS
14
RF Device Data
NXP Semiconductors
AFM907N
AFM907N
15
RF Device Data
NXP Semiconductors
16
RF Device Data
NXP Semiconductors
AFM907N
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Apr. 2017 Initial release of data sheet
1May 2019 Table 1, Max Ratings table, Operating Voltage: changed 7.5 Vdc to 12.5 Vdc to reflect additional
qualification data, p. 2
Table 9, Narrowband RF Test Fixture Component Designations and Values — 520 MHz: corrected C6 to
20 pF ATC100B200JT500XT and C7 to 22 pF, p. 9
Fig. 12, Series Equivalent Source and Load Impedance — 520 MHz: added to data sheet, p. 11
AFM907N
17
RF Device Data
NXP Semiconductors
Document Number: AFM907N
Rev. 1, 05/2019
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
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including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
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