UF4001-G – UF4007-G
1.0A ULTRAFAST RECOVERY RECTIFIER
Date Sheet 4806, Rev. -
Features
l Diffused Junction
l Low Forward Voltage Drop
l High Current Capability A B A
l High Reliability
l High Surge Current Capability
Mechanical Data C
l Case: Molded Plastic D
l Terminals: Plated Leads Solderable per
MIL-STD- 202, Met hod 208
l Polarity: Cathode Band
l Weight: 0.34 grams (approx.)
l Mounting Position: Any
l Marking: Type Number
Maximum Ratings and Electrical Characteristics @TA=25°C unl ess otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol UF
4001-G UF
4002-G UF
4003-G UF
4004-G UF
4005-G UF
4006-G UF
4007-G Unit
Peak Repetitive Revers e Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current
(Note 1) @TA = 55°C IO1.0 A
Non-Repetiti ve Pe ak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method) IFSM 30 A
Max. Forward Voltage @IF = 1.0A VFM 1.0 1.3 1.7 V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C IRM 5.0
100 µA
Reverse Recovery Time (Note 2) trr 50 75 nS
Typical Junction Capacitance (Note 3) Cj20 10 pF
Typical Thermal Resistance, Junction to Ambient RΘJA 60 °C/W
Typical Thermal Resistance, Junction to Lead at
L= 0.375” (9.53mm) RΘJL 15 °C/W
Operating Temperature Range Tj -55 to +125 °C
Storage Temperature Range TSTG -55 to +150 °C
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 1.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SENSITRON
SEMICONDUCTOR
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Dim Min Max Min Max
A 25.4 — 1.000 —
B 4.06 5.21 0.159 0.205
C 0.71 0.864 0.028 0.034
D 2.00 2.72 0.079 0.107
In mm In inch
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0.01
0.1
1.0
10
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
UF4001-G-UF4003-G
UF4005-G-UF4007-G
T = 25 C
Pulse width = 300 s
j°µ
UF4004-G
10
20
30
0
1 10 100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
50V DC
Approx
50 NI (Non-inductive)Ω10 NIΩ
1.0
NI
ΩOscilloscope
(Note 1)
Pulse
Generator
(Note 2)
Device
Under
Test
trr
Settimebasefor5/10ns/cm
+0.5A
0A
-0.25A
-1.0A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .
Ω
Ω
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
(+)
(+)
(-)
(-)
1
10
100
1 10 100
C , CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
UF4001-G -UF4004-G
UF4005-G -UF4007-G
T = 25 C
f = 1.0MHz
j°
0
0.25
0.50
0.75
1.00
02550
75 100 125 150 175
I , AVERAGE FWD RECTIFIED CURRENT (A)
(AV)
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
A°
Single phase half wave
Resistive or Inductive load
Data Sheet 4806, Rev. -
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1-G7-G
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Data Sheet 4806, Rev. –
SENSITRON
SEMI CONDUCTOR UF4001-G-UF4007-G
1.0A ULTRA FAST RECOVERY RECTIFIER
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
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operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
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use at a value exceeding the absolute maximum rating.
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