SMD General Purpose Transistor (PNP) MMBT2907A SMD General Purpose Transistor (PNP) Features * PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications * RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25C unless noted otherwise) Symbol Description MMBT2907A Unit Marking Code 2F -VCEO Collector-Emitter Voltage (Open Base) 60 V -VCBO Collector-Base Voltage (Open Emitter) 60 V -VEBO Emitter-Base Voltage (Open Collector) 5.0 V Collector Current (D.C) 600 mA Power Dissipation above 25C 250 mW fT Transition Frequency at f= 100MHz 200 MHz R j-a From junction to ambient in free air 500 K/W Junction Temperature 150 C -55 to +150 C -IC Ptot TJ TSTG Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Conditions -IC=50mA, -VCE=20V Rev. A/AH 2007-10-11 Page 1 of 3 SMD General Purpose Transistor (PNP) MMBT2907A Electrical Characteristics (T Ambient=25C unless noted otherwise) Symbol Description Min. Max. 75 - Unit -VCE=10V, -IC=0.1mA -VCE=10V, -IC=1mA 100 hFE -ICBO D.C. Current Gain Collector Cut-Off Current -ICEX -IBEX Conditions Base Current with Reverse Biased Emitter Junction -VCEsat Collector-Emitter Saturation Voltage -VBEsat Base-Emitter Saturation Voltage -VCE=10V, -IC=10mA 100 100 300 -VCE=10V, -IC=150mA 50 - -VCE=10V, -IC=500mA - 10 nA -VCB=50V, IE=0 - 10 A -VCB=50V, IE=0, Tj=125 C - 50 nA -VEB=0.5V, -VCE=30V - 50 nA -VEB=3V, -VCE=30V - 0.4 - 1.6 - 1.3 - 2.6 V V -IC=150mA, -IB=15mA -IC=500mA, -IB=50mA -IC=150mA, -IB=15mA -IC=500mA, -IB=50mA -V(BR)CEO Collector-Emitter Breakdown Voltage 60 - V -IC=10mA, IB=0 -V(BR)CBO Collector-Base Breakdown Voltage 60 - V -IC=10A, IE=0 -V(BR)EBO Emitter-Base Breakdown Voltage 5.0 - V fT Current Gain-Bandwidth Product 200 - MHz Co Output Capacitance - 8.0 pF Ci Input Capacitance - 30 pF -IE=10A, IC=0 -VCE=20V, -IC=50mA, f=100MHz -VCB=10V, f=1.0MHz, IE=0 -VEB=2.0V, f=1.0MHz, IC=0 ton Turn on Time - 45 td Delay Time - 10 tr Rise Time - 40 Turn-Off Time (ts + tf) - 100 ts Storage Time - 80 tf Fall Time - 30 toff ns -IB=15mA -IC=150mA -VCC=30V ns -IB=15mA -IC=150mA -VCC=6V Rev. A/AH 2007-10-11 www.taitroncomponents.com Page 2 of 3 SMD General Purpose Transistor (PNP) MMBT2907A Dimensions in mm SOT-23 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 247-2232 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTACOES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAUDE - SAO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN' AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2007-10-11 www.taitroncomponents.com Page 3 of 3