Rev. A/AH
2007
-
10
-
11
MMBT2907A
TAITRON COMPONEN
T
S INCORPORATED www.taitroncomponents.com
Page 1
of 3
Tel: (800)
-
TAITRON (800)
-
824
-
8766 (661)
-
257
-
6060
Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415
SMD General Purpose
Transistor (PNP)
SMD General Purpose Transistor (PNP)
Features
• PNP Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
• RoHS compliance
Mechanical Data
Case: SOT-23, Plastic Package
Terminals: Solderable per MIL-STD-202G, Method 208
Weight: 0.008 gram
Maximum Ratings (T
Ambient
=25ºC unless noted otherwise)
Symbol Description MMBT2907A Unit Conditions
Marking Code 2F
-VCEO Collector-Emitter Voltage (Open Base) 60 V
-VCBO Collector-Base Voltage (Open Emitter) 60 V
-VEBO Emitter -B a se Voltage (Open Collector) 5.0 V
-IC Collector Current (D.C) 600 mA
Ptot Power Dissipation above 25°C 250 mW
fT Transition Frequency at f= 100MHz 200 MHz -IC=50mA, -VCE=20V
R θ j-a From junction to ambient in free air 500 K/W
TJ Junction Temperature 150 ° C
TSTG Storage Temperature Range -55 to +150 ° C
SOT-23
Rev. A/AH
2007
-
10
-
11
MMBT2907A
SMD General Purpose Transistor (PNP)
www.taitroncomponents.com Page 2
of 3
Electrical Characteristics (T
Ambient
=25ºC unless noted otherwise)
Symbol Description Min. Max. Unit Conditions
75 - -VCE=10V, -IC=0.1mA
100 -VCE=10V, -IC=1mA
100 -
-VCE=10V, -IC=10mA
100 300 -VCE=10V, -IC=150mA
hFE D.C. Current Gain
50 -
-VCE=10V, -IC=500mA
- 10 nA -VCB=50V, IE=0
-ICBO - 10 µA
-VCB=50V, IE=0, Tj=125° C
-ICEX
Collector Cu t–Off Current
- 50 nA
-VEB=0.5V, -VCE=30V
-IBEX Base Current with Reverse Biased Emitter
Junction - 50 nA
-VEB=3V, -VCE=30V
- 0.4 -IC=150mA, -IB=15mA
-VCEsat Collector-Emitter Saturation Voltage - 1.6
V -IC=500mA, -IB=50mA
- 1.3 -IC=150mA, -IB=15mA
-VBEsat Base-Emitter Saturation Voltage - 2.6
V -IC=500mA, -IB=50mA
-V(BR)CEO Collector-Emitter Breakdown Voltage 60 - V -IC=10mA, IB=0
-V(BR)CBO Collector-Base Breakdown Voltage 60 - V -IC=10µA, IE=0
-V(BR)EBO Emitter-Base Breakdown Voltage 5.0 - V -IE=10µA, IC=0
fT Current Gain-Bandwidth Product 200 - MHz
-VCE=20V, -IC=50mA,
f=100MHz
Co Output Capacitance - 8.0 pF
-VCB=10V, f=1.0MHz,
IE=0
Ci Input Capacitance - 30 pF
-VEB=2.0V, f=1.0MHz,
IC=0
ton Turn on Time - 45
td Delay Time - 10
tr Rise Time - 40
ns -IB=15mA
-IC=150mA
-VCC=30V
toff Turn-Off Time (t s + tf) - 100
ts Storage Time - 80
tf Fall Time - 30
ns -IB=15mA
-IC=150mA
-VCC=6V
Rev. A/AH
2007
-
10
-
11
MMBT2907A
SMD General Purpose Transistor (PNP)
www.taitroncomponents.com Page 3
of 3
Dimensions in mm
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 247-2232 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: taitron@taitroncomponents.com
Http://www.taitroncomponents.com
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Tel: +52-55-5560-1519
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Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
SOT-23
