Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS -20V
▼ 2.5V Gate Drive Capability RDS(ON) 150mΩ
▼ Fast Switching Characteristic ID -10A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 8.0 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data and specifications subject to change without notice
RoHS-compliant Product
201029074-1/4
± 12
-10
15.6
-55 to 150
-55 to 150
AP3310GH/J
Rating
- 20
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V -6.2
Pulsed Drain Current1-24
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
D
S
GDSTO-252(H)
GDSTO-251(J)
This device is suited for low voltage and lower power
applications.
AP3310GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=-4.5V, ID=-2.8A - - 150 mΩ
VGS=-2.5V, ID=-2.0A - - 250 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - - V
gfs Forward Transconductance VDS=-5V, ID=-2.8A - 2.8 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-20V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=150oC) VDS=-16V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=±12V - - ±100 nA
QgTotal Gate Charge2ID=-2.8A - 4.2 - nC
Qgs Gate-Source Charge VDS=-6V - 1.2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-5V - 0.4 - nC
td(on) Turn-on Delay Time2VDS=-6V - 7 - ns
trRise Time ID=-1A - 8 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=-5V - 13 - ns
tfFall Time RD=6Ω-5-
ns
Ciss Input Capacitance VGS=0V - 320 - pF
Coss Output Capacitance VDS=-6V - 75 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2Tj=25℃, IS=-10A, VGS=0V - - -1.2 V
trr Reverse Recovery Time2IS=-2.8A, VGS=0V, - 17 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC
Notes:
1.Pulse width limited by Maximum junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
2/4
AP3310GH/J
65mΩ
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.01E+08
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
0.6
0.8
1
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID= -2.8A
VGS = -4.5V
0
4
8
12
16
20
012345678
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25 oC-5.0V
-4.5V
-3.5V
-2.5V
VG= -2.0V
0
4
8
12
16
20
012345678
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
VG= -2.0V
-5.0V
-4.5V
-3.5V
-2.5V
TC=150 oC
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1 1.2
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oCTj=150 oC
0.4
0.6
0.8
1
1.2
1.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized -VGS(th) (V)
80
120
160
200
240
280
0246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (
Ω
)
ID=-2A
TC=25 oC
AP3310GH/J
65mΩ
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fi
g
10. Effective Transient Thermal Im
p
edance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4/4
0
2
4
6
8
10
12
012345678910
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID= -2.8A
VDS = -6V
0.1
1
10
100
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthjc)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc +
tT
10
100
1000
1 5 9 13172125
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
0.02
Q
VG
QGS QGD
QG
Charge
-5V
td(on) trtd(off) tf
VDS
VGS
10%
90%
Package Outline : TO-252
Millimeters
MIN NOM MAX
A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
E3 F 2.20 2.63 3.05
F1 0.5 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-252
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
e
e
D
D1
E2
E1
F
B1 F1
A2
A3 C
R : 0.127~0.381
(
0.1mm
Part Number Package Code
3310GH
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
LOGO
meet Rohs requirement
MIN NOM MAX
Original Original Original
A 2.10 2.30 2.50
A1 0.60 1.20 1.80
B1 0.40 0.60 0.80
B2 0.60 0.95 1.25
c0.40 0.50 0.65
c1 0.40 0.55 0.70
D 6.00 6.50 7.00
D1 4.80 5.40 5.90
E1 5.00 5.50 6.00
E2 1.20 1.70 2.20
e---- 2.30 ----
F 7.00 --- 16.70
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-251
ADVANCED POWER ELECTRONICS CORP.
Millimeters
SYMBOLS
3310G
J
YWWSSS
Part Numbe
r
Package Code
A
c1
A1
c
e
D
E2
E1 E
B1
B2
F
D1
e
Date Code (YWWSSS)
Y ：Last Digit Of The Year
WW：Week
SSS ：Sequence
LOGO
meet Rohs requirement
