2N1893S
Silicon NPN Transisto
r
Data Sheet
Description
Screening and processing per MIL-PRF-19500
JAN level (2N1893SJ)
JANTX level (2N1893SJX)
JANTXV level (2N1893SJV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
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Applications
General purpose
Low power
NPN silicon transistor
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 4500
Reference document:
MIL-PRF-19500/182
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 80 Volts
Collector-Base Voltage VCBO 120 Volts
Emitter-Base Voltage VEBO 7 Volts
Collector Current, Continuous IC 500 mA
Power Dissipation, TA = 25OC
Derate linearly above 60OC PT 0.8
5.7
W
mW/°C
Power Dissipation, TC = 25OC
Derate linearly above 25OC PT 3.0
17.2
W
mW/°C
Thermal Resistance RθJA 175 °C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG -65 to +200 °C
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Copyright 2010
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
Please contact SEMICOA for special configurations
SEMICOA Corporation
SEMICOA Corporation offers:
www.SEMICOA.com
2N1893S
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 30 mA 80 Volts
Collector-Emitter Breakdown Voltage V(BR)CER IC = 10 mA, RBE = 10 100 Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 120 Volts
VCB = 90 Volts
VCE = 90 Volts, TA = 150 OC
100
10
15
µA
nA
µA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 7 Volts
VEB = 5 Volts 100
10
µA
nA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 0.1 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts,
TA = -55 OC
20
35
40
20
120
Base-Emitter Saturation Voltage VBEsat I
C = 150 mA, IB = 15 mA 1.3 Volts
Collector-Emitter Saturation Voltage VCEsat I
C = 150 mA, IB = 15 mA 5.0 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 10 Volts, IC = 50 mA,
f = 20 MHz 3
10
Short Circuit Forward Current Transfer
Ratio
hFE1
hFE2
f = 1 kHz
VCE = 5 Volts, IC = 1 mA
VCE = 10 Volts, IC = 5 mA
35
45
100
150
Short Circuit Input Impedance hie V
CB = 10V, IC = 5mA 4 8
Open Circuit Output Admittance hoe V
CB = 10V, IC = 5mA 0.5 µΩ
Open Circuit reverse Voltage Transfer
Ratio hre V
CB = 10V, IC = 5mA 1.5x10-4
Open Circuit Output Capacitance COBO VCB = 10 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 2
15 pF
Switching Characteristics
Pulse Response ton + toff 30 ns
Copyright 2010
Rev G. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
SEMICOA Corporation