S-5716 Series www.sii-ic.com LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 (c) Seiko Instruments Inc., 2011-2012 The S-5716 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with low current consumption. The output voltage changes when the S-5716 Series detects the intensity level of flux density. Using the S-5716 Series with a magnet makes it possible to detect the open / close in various devices. High-density mounting is possible by using the small SOT-23-3 package or the super small SNT-4A package. Due to its high-accuracy magnetic characteristics, the S-5716 Series can make operation's dispersion in the system combined with magnet smaller. Caution This product is intended to use in general electronic devices such as consumer electronics, office equipment, and communications devices. Before using the product in medical equipment or automobile equipment including car audio, keyless entry and engine control unit, contact to SII is indispensable. Features * Pole detection*1: * Detection logic for magnetism*1: * Output form*1: * Magnetic sensitivity*1: * Operating cycle (current consumption): * Power supply voltage range: * Operation temperature range: * Lead-free (Sn 100%), halogen-free*2 Detection of both poles, S pole or N pole Active "L", active "H" Nch open-drain output, CMOS output BOP = 1.8 mT typ. BOP = 3.0 mT typ. BOP = 4.5 mT typ. BOP = 7.0 mT typ. Product with both poles detection tCYCLE = 50.50 ms (4.0 A) typ. Product with S pole or N pole detection tCYCLE = 50.85 ms (2.6 A) typ. VDD = 2.7 V to 5.5 V Ta = -40C to +85C *1. The option can be selected. *2. Refer to " Product Name Structure" for details. Applications * Plaything, portable game * Home appliance * Housing equipment * Industrial equipment Packages * SOT-23-3 * SNT-4A Seiko Instruments Inc. 1 LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series Block Diagrams 1. Nch open-drain output product VDD OUT Sleep / Awake logic *1 *1 Chopping stabilized amplifier VSS *1. Parasitic diode Figure 1 2. CMOS output product VDD Sleep / Awake logic *1 *1 OUT Chopping stabilized amplifier VSS *1. Parasitic diode Figure 2 2 Seiko Instruments Inc. *1 LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series Product Name Structure 1. Product name S-5716 A x x x x - xxxx U Environmental code U : Lead-free (Sn 100%), halogen-free Package name (abbreviation) and packing specifications*1 M3T1 : SOT-23-3, Tape I4T1 : SNT-4A, Tape Magnetic sensitivity 0 : BOP = 1.8 mT typ. 1 : BOP = 3.0 mT typ. 2 : BOP = 4.5 mT typ. 3 : BOP = 7.0 mT typ. Detection logic for magnetism L : Active "L" H : Active "H" Pole detection D : Detection of both poles S : Detection of S pole N : Detection of N pole Output form N : Nch open-drain output C : CMOS output Operating cycle A : tCYCLE = 50.50 ms typ. (product with both poles detection) tCYCLE = 50.85 ms typ. (product with S pole or N pole detection) *1. Refer to the tape drawing. 2. Packages Table 1 Package name SOT-23-3 SNT-4A Dimension MP003-C-P-SD PF004-A-P-SD Package Drawing Code Tape MP003-C-C-SD PF004-A-C-SD Seiko Instruments Inc. Reel MP003-Z-R-SD PF004-A-R-SD Land - PF004-A-L-SD 3 LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series 3. Product name list 3. 1 SOT-23-3 3. 1. 1 Nch open-drain output product Table 2 Product Name Operating Cycle (tCYCLE) Output Form Pole Detection Nch open-drain output S-5716ANDL0-M3T1U 50.50 ms Both poles Nch open-drain output S-5716ANDL1-M3T1U 50.50 ms Both poles Nch open-drain output S-5716ANDL2-M3T1U 50.50 ms Both poles Nch open-drain output S-5716ANSL1-M3T1U 50.85 ms S pole Nch open-drain output S-5716ANSL2-M3T1U 50.85 ms S pole Remark Please contact our sales office for products other than the above. 3. 1. 2 Detection Logic Magnetic for Magnetism Sensitivity (BOP) Active "L" Active "L" Active "L" Active "L" Active "L" 1.8 mT typ. 3.0 mT typ. 4.5 mT typ. 3.0 mT typ. 4.5 mT typ. CMOS output product Table 3 Product Name Operating Cycle (tCYCLE) Output Form Pole Detection CMOS output S-5716ACDL0-M3T1U 50.50 ms Both poles CMOS output S-5716ACDL1-M3T1U 50.50 ms Both poles CMOS output S-5716ACDL2-M3T1U 50.50 ms Both poles CMOS output S-5716ACDL3-M3T1U 50.50 ms Both poles CMOS output S-5716ACDH0-M3T1U 50.50 ms Both poles CMOS output S-5716ACDH1-M3T1U 50.50 ms Both poles CMOS output S-5716ACDH2-M3T1U 50.50 ms Both poles CMOS output S-5716ACSL1-M3T1U 50.85 ms S pole CMOS output S-5716ACSL2-M3T1U 50.85 ms S pole Remark Please contact our sales office for products other than the above. 3. 2 Detection Logic Magnetic for Magnetism Sensitivity (BOP) Active "L" Active "L" Active "L" Active "L" Active "H" Active "H" Active "H" Active "L" Active "L" 1.8 mT typ. 3.0 mT typ. 4.5 mT typ. 7.0 mT typ 1.8 mT typ. 3.0 mT typ. 4.5 mT typ. 3.0 mT typ. 4.5 mT typ. SNT-4A 3. 2. 1 Nch open-drain output product Table 4 Product Name Operating Cycle (tCYCLE) Output Form Pole Detection Nch open-drain output S-5716ANDL0-I4T1U 50.50 ms Both poles Nch open-drain output S-5716ANDL1-I4T1U 50.50 ms Both poles Nch open-drain output S-5716ANDL2-I4T1U 50.50 ms Both poles Nch open-drain output S-5716ANSL1-I4T1U 50.85 ms S pole Nch open-drain output S-5716ANSL2-I4T1U 50.85 ms S pole Remark Please contact our sales office for products other than the above. 3. 2. 2 Detection Logic Magnetic for Magnetism Sensitivity (BOP) Active "L" Active "L" Active "L" Active "L" Active "L" 1.8 mT typ. 3.0 mT typ. 4.5 mT typ. 3.0 mT typ. 4.5 mT typ. CMOS output product Table 5 Operating Cycle Output Form Pole Detection Product Name (tCYCLE) CMOS output S-5716ACDL0-I4T1U 50.50 ms Both poles CMOS output S-5716ACDL1-I4T1U 50.50 ms Both poles CMOS output S-5716ACDL2-I4T1U 50.50 ms Both poles CMOS output S-5716ACDH0-I4T1U 50.50 ms Both poles CMOS output S-5716ACDH1-I4T1U 50.50 ms Both poles CMOS output S-5716ACDH2-I4T1U 50.50 ms Both poles CMOS output S-5716ACSL1-I4T1U 50.85 ms S pole CMOS output S-5716ACSL2-I4T1U 50.85 ms S pole Remark Please contact our sales office for products other than the above. 4 Seiko Instruments Inc. Detection Logic Magnetic for Magnetism Sensitivity (BOP) Active "L" Active "L" Active "L" Active "H" Active "H" Active "H" Active "L" Active "L" 1.8 mT typ. 3.0 mT typ. 4.5 mT typ. 1.8 mT typ. 3.0 mT typ. 4.5 mT typ. 3.0 mT typ. 4.5 mT typ. LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series Pin Configurations 1. SOT-23-3 Table 6 Top view Pin No. 1 2 Symbol Description 1 VSS GND pin 2 VDD Power supply pin 3 OUT Output pin 3 Figure 3 2. SNT-4A Table 7 Top view 1 2 4 3 Figure 4 Pin No. Symbol Description 1 VDD Power supply pin 2 VSS GND pin 3 *1 NC No connection 4 OUT Output pin *1. The NC pin is electrically open. The NC pin can be connected to the VDD pin or the VSS pin. Seiko Instruments Inc. 5 LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series Absolute Maximum Ratings Table 8 Item Symbol Power supply voltage VDD Output current IOUT Output voltage Power dissipation (Ta = +25C unless otherwise specified) Absolute Maximum Rating Unit Nch open-drain output product CMOS output product SOT-23-3 SNT-4A VOUT PD VSS - 0.3 to VSS + 7.0 V 2.0 mA VSS - 0.3 to VSS + 7.0 V VSS - 0.3 to VDD + 0.3 430*1 *1 300 mW mW V Operation ambient temperature Topr -40 to +85 C Storage temperature Tstg -40 to +125 C *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm x 76.2 mm x t1.6 mm (2) Name: JEDEC STANDARD51-7 Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. Power Dissipation (PD) [mW] 600 SNT-4A 200 0 Figure 5 6 SOT-23-3 400 0 150 100 50 Ambient Temperature (Ta) [C] Power Dissipation of Package (When Mounted on Board) Seiko Instruments Inc. LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series Electrical Characteristics 1. Product with both poles detection 1. 1 S-5716AxDxx Table 9 Item Power supply voltage Current consumption Output voltage (Ta = +25C, VDD = 5.0 V, VSS = 0 V unless otherwise specified) Test Condition Min. Typ. Max. Unit Circuit Symbol VDD IDD VOUT - Average value Nch open-drain output product Output transistor Nch, IOUT = 2 mA Output transistor Nch, IOUT = 2 mA CMOS output product Output transistor Pch, IOUT = -2 mA Nch open-drain output product Output transistor Nch, VOUT = 5.5 V 2.7 - 5.0 4.0 5.5 8.0 V A - 1 - - 0.4 V 2 - - 0.4 V 2 VDD - 0.4 - - V 3 - - 1 A 4 Leakage current ILEAK Awake mode time tAW - - 0.10 - ms - Sleep mode time tSL - - 50.40 - ms - Operating cycle tCYCLE - 50.50 100.00 ms - 2. tAW + tSL Product with S pole or N pole detection 2. 1 S-5716AxSxx, S-5716AxNxx Table 10 Item Power supply voltage Current consumption Output voltage (Ta = +25C, VDD = 5.0 V, VSS = 0 V unless otherwise specified) Test Condition Min. Typ. Max. Unit Circuit Symbol VDD IDD VOUT - Average value Nch open-drain output product Output transistor Nch, IOUT = 2 mA Output transistor Nch, IOUT = 2 mA CMOS output product Output transistor Pch, IOUT = -2 mA Nch open-drain output product Output transistor Nch, VOUT = 5.5 V 2.7 - 5.0 2.6 5.5 5.0 V A - 1 - - 0.4 V 2 - - 0.4 V 2 VDD - 0.4 - - V 3 - - 1 A 4 Leakage current ILEAK Awake mode time tAW - - 0.05 - ms - Sleep mode time tSL - - 50.80 - ms - Operating cycle tCYCLE - 50.85 100.00 ms - tAW + tSL Seiko Instruments Inc. 7 LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series Magnetic Characteristics 1. Product with both poles detection 1. 1 BOP = 1.8 mT typ. Item Operation point*1 Release point*2 Hysteresis width*3 1. 2 S pole N pole S pole N pole S pole N pole Symbol BOPS BOPN BRPS BRPN BHYSS BHYSN Table 11 (Ta = +25C, VDD = 5.0 V, VSS = 0 V unless otherwise specified) Condition Min. Typ. Max. Unit Test Circuit - 0.9 1.8 2.7 mT 5 - -2.7 -1.8 -0.9 mT 5 - 0.3 1.2 2.2 mT 5 - -2.2 -1.2 -0.3 mT 5 BHYSS = BOPS - BRPS - 0.6 - mT 5 BHYSN = |BOPN - BRPN| - 0.6 - mT 5 BOP = 3.0 mT typ. Table 12 (Ta = +25C, VDD = 5.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 Release point*2 Hysteresis width*3 1. 3 Symbol S pole N pole S pole N pole S pole N pole BOPS BOPN BRPS BRPN BHYSS BHYSN Condition Min. Typ. Max. Unit Test Circuit - - - - 1.4 -4.0 1.1 -3.7 - - 3.0 -3.0 2.2 -2.2 0.8 0.8 4.0 -1.4 3.7 -1.1 - - mT mT mT mT mT mT 5 5 5 5 5 5 BHYSS = BOPS - BRPS BHYSN = |BOPN - BRPN| BOP = 4.5 mT typ. Table 13 (Ta = +25C, VDD = 5.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 Release point*2 *3 Hysteresis width 1. 4 S pole N pole S pole N pole S pole N pole Symbol BOPS BOPN BRPS BRPN BHYSS BHYSN Condition - - - - BHYSS = BOPS - BRPS BHYSN = |BOPN - BRPN| Min. 2.5 -6.0 2.0 -5.5 - - Typ. 4.5 -4.5 3.5 -3.5 1.0 1.0 Max. 6.0 -2.5 5.5 -2.0 - - Unit mT mT mT mT mT mT Test Circuit 5 5 5 5 5 5 BOP = 7.0 mT typ. Table 14 (Ta = +25C, VDD = 5.0 V, VSS = 0 V unless otherwise specified) Item Operation point *1 Release point*2 Hysteresis width*3 8 S pole N pole S pole N pole S pole N pole Symbol BOPS BOPN BRPS BRPN BHYSS BHYSN Condition - - - - BHYSS = BOPS - BRPS BHYSN = |BOPN - BRPN| Min. 5.0 -8.5 3.7 -7.2 - - Seiko Instruments Inc. Typ. 7.0 -7.0 5.2 -5.2 1.8 1.8 Max. 8.5 -5.0 7.2 -3.7 - - Unit mT mT mT mT mT mT Test Circuit 5 5 5 5 5 5 LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series 2. Product with S pole detection 2. 1 BOP = 1.8 mT typ. Table 15 (Ta = +25C, VDD = 5.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 S pole *2 Release point S pole Hysteresis width*3 S pole 2. 2 Symbol BOPS BRPS BHYSS Condition - - BHYSS = BOPS - BRPS Min. 0.9 0.3 - Typ. 1.8 1.2 0.6 Max. 2.7 2.2 - Unit mT mT mT Test Circuit 5 5 5 BOP = 3.0 mT typ. Table 16 (Ta = +25C, VDD = 5.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 2. 3 Symbol BOPS BRPS BHYSS Condition - - BHYSS = BOPS - BRPS Min. 1.4 1.1 - Typ. 3.0 2.2 0.8 Max. 4.0 3.7 - Unit mT mT mT Test Circuit 5 5 5 BOP = 4.5 mT typ. Table 17 (Ta = +25C, VDD = 5.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 S pole *2 Release point S pole Hysteresis width*3 S pole 2. 4 Symbol BOPS BRPS BHYSS Condition - - BHYSS = BOPS - BRPS Min. 2.5 2.0 - Typ. 4.5 3.5 1.0 Max. 6.0 5.5 - Unit mT mT mT Test Circuit 5 5 5 BOP = 7.0 mT typ. Table 18 (Ta = +25C, VDD = 5.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole Symbol BOPS BRPS BHYSS Condition - - BHYSS = BOPS - BRPS Min. 5.0 3.7 - Seiko Instruments Inc. Typ. 7.0 5.2 1.8 Max. 8.5 7.2 - Unit mT mT mT Test Circuit 5 5 5 9 LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series 3. Product with N pole detection 3. 1 BOP = 1.8 mT typ. Table 19 (Ta = +25C, VDD = 5.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 N pole *2 Release point N pole Hysteresis width*3 N pole 3. 2 Symbol BOPN BRPN BHYSN Condition - - BHYSN = |BOPN - BRPN| Min. -2.7 -2.2 - Typ. -1.8 -1.2 0.6 Max. -0.9 -0.3 - Unit mT mT mT Test Circuit 5 5 5 BOP = 3.0 mT typ. Table 20 (Ta = +25C, VDD = 5.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 3. 3 Symbol BOPN BRPN BHYSN Condition - - BHYSN = |BOPN - BRPN| Min. -4.0 -3.7 - Typ. -3.0 -2.2 0.8 Max. -1.4 -1.1 - Unit mT mT mT Test Circuit 5 5 5 BOP = 4.5 mT typ. Table 21 (Ta = +25C, VDD = 5.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 3. 4 Symbol BOPN BRPN BHYSN Condition - - BHYSN = |BOPN - BRPN| Min. -6.0 -5.5 - Typ. -4.5 -3.5 1.0 Max. -2.5 -2.0 - Unit mT mT mT Test Circuit 5 5 5 BOP = 7.0 mT typ. Table 22 (Ta = +25C, VDD = 5.0 V, VSS = 0 V unless otherwise specified) Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole Symbol BOPN BRPN BHYSN Condition - - BHYSN = |BOPN - BRPN| Min. -8.5 -7.2 - Typ. -7.0 -5.2 1.8 Max. -5.0 -3.7 - Unit mT mT mT Test Circuit 5 5 5 *1. BOPN, BOPS: Operation points BOPN and BOPS are the values of magnetic flux density when the output voltage (VOUT) is inverted after the magnetic flux density applied to the S-5716 Series by the magnet (N pole or S pole) is increased (the magnet is moved closer). Even when the magnetic flux density exceeds BOPN or BOPS, VOUT retains the status. *2. BRPN, BRPS: Release points BRPN and BRPS are the values of magnetic flux density when the output voltage (VOUT) is inverted after the magnetic flux density applied to the S-5716 Series by the magnet (N pole or S pole) is decreased (the magnet is moved further away). Even when the magnetic flux density falls below BRPN or BRPS, VOUT retains the status. *3. BHYSN, BHYSS: Hysteresis widths BHYSN and BHYSS are the difference between BOPN and BRPN, and BOPS and BRPS, respectively. Remark 10 The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss. Seiko Instruments Inc. LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series Test Circuits A *1 R 100 k VDD S-5716 Series OUT VSS *1. Resistor (R) is unnecessary for the CMOS output product. Figure 6 Test Circuit 1 VDD S-5716 Series OUT VSS Figure 7 A V Test Circuit 2 VDD S-5716 Series OUT VSS Figure 8 A V Test Circuit 3 Seiko Instruments Inc. 11 LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series VDD S-5716 Series OUT A VSS V Figure 9 Test Circuit 4 R*1 100 k VDD S-5716 Series OUT VSS *1. Resistor (R) is unnecessary for the CMOS output product. Figure 10 12 V Test Circuit 5 Seiko Instruments Inc. LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series Standard Circuit *1 VDD CIN 0.1 F R 100 k S-5716 Series OUT VSS *1. Resistor (R) is unnecessary for the CMOS output product. Figure 11 Caution The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. Seiko Instruments Inc. 13 LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series Operation 1. Direction of applied magnetic flux The S-5716 Series detects the flux density which is vertical to the marking surface. In product with both poles detection, the output voltage (VOUT) is inverted when the S pole or N pole is moved closer to the marking surface. In product with S pole detection, the output voltage (VOUT) is inverted when the S pole is moved closer to the marking surface. In product with N pole detection, the output voltage (VOUT) is inverted when the N pole is moved closer to the marking surface. Figure 12 and Figure 13 show the direction in which magnetic flux is being applied. 1. 1 SOT-23-3 1. 2 SNT-4A N S N S Marking surface Marking surface Figure 12 2. Figure 13 Position of Hall sensor Figure 14 and Figure 15 show the position of Hall sensor. The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as described below. The following also shows the distance (typ. value) between the marking surface and the chip surface of a package. 2. 1 SOT-23-3 2. 2 SNT-4A Top view Top view The center of Hall sensor; in this 0.3 mm 1 2 1 The center of Hall sensor; in this 0.3 mm 4 2 3 3 0.16 mm (typ.) 0.7 mm (typ.) Figure 14 14 Figure 15 Seiko Instruments Inc. LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series 3. Basic operation The S-5716 Series changes the output voltage level (VOUT) according to the level of the magnetic flux density (N pole or S pole) applied by a magnet. The following explains the operation when the magnetism detection logic is active "L". 3. 1 Product with detection of both poles When the magnetic flux density vertical to the marking surface exceeds BOPN or BOPS after the S pole or N pole of a magnet is moved closer to the marking surface of the S-5716 Series, VOUT changes from "H" to "L". When the S pole or N pole of a magnet is moved further away from the marking surface of the S-5716 Series and the magnetic flux density is lower than BRPN or BRPS, VOUT changes from "L" to "H". Figure 16 shows the relationship between the magnetic flux density and VOUT. VOUT BHYSN BHYSS H L N pole BOPN 0 BRPN BRPS BOPS S pole Flux density (B) Figure 16 3. 2 Product with detection of S pole When the magnetic flux density vertical to the marking surface exceeds BOPS after the S pole of a magnet is moved closer to the marking surface of the S-5716 Series, VOUT changes from "H" to "L". When the S pole of a magnet is moved further away from the marking surface of the S-5716 Series and the magnetic flux density is lower than BRPS, VOUT changes from "L" to "H". Figure 17 shows the relationship between the magnetic flux density and VOUT. VOUT BHYSS H L N pole 0 BRPS BOPS S pole Flux density (B) Figure 17 Seiko Instruments Inc. 15 LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series 3. 3 Product with detection of N pole When the magnetic flux density vertical to the marking surface exceeds BOPN after the N pole of a magnet is moved closer to the marking surface of the S-5716 Series, VOUT changes from "H" to "L". When the N pole of a magnet is moved further away from the marking surface of the S-5716 Series and the magnetic flux density is lower than BRPN, VOUT changes from "L" to "H". Figure 18 shows the relationship between the magnetic flux density and VOUT. VOUT BHYSN H L N pole BOPN BRPN 0 S pole Flux density (B) Figure 18 16 Seiko Instruments Inc. LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series Precautions * If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by feedthrough current. Take care with the pattern wiring to ensure that the impedance of the power supply is low. * Note that the IC may malfunction if the power supply voltage rapidly changes. * Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. * Large stress on this IC may affect on the magnetic characteristics. Avoid large stress which is caused by bend and distortion during mounting the IC on a board or handle after mounting. * SII claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. Seiko Instruments Inc. 17 LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series Marking Specifications 1. SOT-23-3 Top view (1) to (3): (4): 1 Product code (Refer to Product name vs. Product code.) Lot number (1) (2) (3) (4) 2 3 Product name vs. Product code 1. 1 Nch open-drain output product Product Code Product Name (1) (2) (3) X 3 C S-5716ANDL0-M3T1U X 2 D S-5716ANDL1-M3T1U X 3 E S-5716ANDL2-M3T1U X 2 E S-5716ANSL1-M3T1U X 3 G S-5716ANSL2-M3T1U 1. 2 CMOS output product Product Name S-5716ACDL0-M3T1U S-5716ACDL1-M3T1U S-5716ACDL2-M3T1U S-5716ACDL3-M3T1U S-5716ACDH0-M3T1U S-5716ACDH1-M3T1U S-5716ACDH2-M3T1U S-5716ACSL1-M3T1U S-5716ACSL2-M3T1U 18 Product Code (1) (2) (3) X 3 B X 2 F X 3 D X 3 J X 3 H X 3 A X 3 I X 2 G X 3 F Seiko Instruments Inc. LOW CURRENT CONSUMPTION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC Rev.1.2_00 S-5716 Series 2. SNT-4A Top view (1) to (3): 1 Product code (Refer to Product name vs. Product code.) 4 (1) (2) (3) 2 3 Product name vs. Product code 2. 1 Nch open-drain output product Product Code Product Name (1) (2) (3) X 3 C S-5716ANDL0-I4T1U X 2 D S-5716ANDL1-I4T1U X 3 E S-5716ANDL2-I4T1U X 2 E S-5716ANSL1-I4T1U X 3 G S-5716ANSL2-I4T1U 2. 2 CMOS output product Product Name S-5716ACDL0-I4T1U S-5716ACDL1-I4T1U S-5716ACDL2-I4T1U S-5716ACDH0-I4T1U S-5716ACDH1-I4T1U S-5716ACDH2-I4T1U S-5716ACSL1-I4T1U S-5716ACSL2-I4T1U Product Code (1) (2) (3) X 3 B X 2 F X 3 D X 3 H X 3 A X 3 I X 2 G X 3 F Seiko Instruments Inc. 19 2.90.2 1 2 3 0.16 +0.1 -0.06 0.950.1 1.90.2 0.40.1 No. MP003-C-P-SD-1.0 TITLE SOT233-C-PKG Dimensions No. MP003-C-P-SD-1.0 SCALE UNIT mm Seiko Instruments Inc. +0.1 o1.5 -0 4.00.1 2.00.1 +0.25 o1.0 -0 0.230.1 4.00.1 1.40.2 3.20.2 1 2 3 Feed direction No. MP003-C-C-SD-2.0 TITLE SOT233-C-Carrier Tape No. MP003-C-C-SD-2.0 SCALE UNIT mm Seiko Instruments Inc. 12.5max. 9.20.5 Enlarged drawing in the central part o130.2 No. MP003-Z-R-SD-1.0 SOT233-C-Reel TITLE MP003-Z-R-SD-1.0 No. SCALE UNIT QTY. mm Seiko Instruments Inc. 3,000 1.20.04 3 4 +0.05 0.08 -0.02 2 1 0.65 0.480.02 0.20.05 No. PF004-A-P-SD-4.0 TITLE SNT-4A-A-PKG Dimensions PF004-A-P-SD-4.0 No. SCALE UNIT mm Seiko Instruments Inc. +0.1 o1.5 -0 4.00.1 2.00.05 0.250.05 +0.1 5 1.450.1 2 1 3 4 o0.5 -0 4.00.1 0.650.05 Feed direction No. PF004-A-C-SD-1.0 TITLE SNT-4A-A-Carrier Tape PF004-A-C-SD-1.0 No. SCALE UNIT mm Seiko Instruments Inc. 12.5max. 9.00.3 Enlarged drawing in the central part o130.2 (60) (60) No. PF004-A-R-SD-1.0 SNT-4A-A-Reel TITLE PF004-A-R-SD-1.0 No. SCALE UNIT QTY. mm Seiko Instruments Inc. 5,000 0.52 2 1.16 0.52 0.35 1. 2. 0.3 1 (0.25 mm min. / 0.30 mm typ.) (1.10 mm ~ 1.20 mm) 0.03 mm 1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.). 2. Do not widen the land pattern to the center of the package (1.10 mm to 1.20 mm). Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package. 2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm or less from the land pattern surface. 3. Match the mask aperture size and aperture position with the land pattern. 4. Refer to "SNT Package User's Guide" for details. 1. 1. (0.25 mm min. / 0.30 mm typ.) 2. (1.10 mm ~ 1.20 mm) 2. 1. 2. () 0.03 mm 3. 4. "SNT" TITLE SNT-4A-A-Land Recommendation PF004-A-L-SD-4.0 No. No. PF004-A-L-SD-4.0 SCALE UNIT mm Seiko Instruments Inc. www.sii-ic.com * * The information described herein is subject to change without notice. * When the products described herein are regulated products subject to the Wassenaar Arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. * Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. * The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, vehicle equipment, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment, without prior written permission of Seiko Instruments Inc. * * The products described herein are not designed to be radiation-proof. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.