S9970/S9971 series
The S9970/S9971 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. The
S9970/S9971 series offer lower dark current and lower readout noise than the S7010/S7011 series that have been marketed. By using the
binning operation, the S9970/S9971 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
makes the S9970/S9971 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and
signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. The S9970/S9971 series
also feature low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving
a wide dynamic range.
The S9970/S9971 series have an effective pixel size of 24 × 24 µm and are available in image areas ranging from 12.288 (H) × 1.44 (V) mm2
(512 × 60 pixels) up to a large image area of 24.576 (H) × 6.048 (V) mm2 (1024 × 252 pixels). S9970/S9971 series are pin compatible with
S7010/S7011 series. (Operating conditions are a little bit changed from S7010/S7011 series.)
Features
l
Low dark signal: 10 e-/pixel/s Typ. (0 ˚C, MPP mode)
l
Low readout noise: 4 e-rms Typ.
l
512 (H) × 60 (V) to 1024 (H) × 252 (V) pixel format
l
Pixel size: 24 × 24 µm
l
Line/pixel binning
l
100 % fill factor
l
Wide dynamic range
l
MPP operation
Applications
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Fluorescence spectrometer, ICP
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Raman spectrometer
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Industrial inspection requiring
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Semiconductor inspection
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DNA sequencer
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Low-light-level detection
IMAGE SENSOR
CCD area image sensor
Low dark signal · low readout noise/front-illuminated FFT-CCD
Selection guide
Type no. Cooling Number of
total pixels
Number of
active pixels
Active area
[mm (H) × mm (V)]
Applicable
multichannel
detector head
S9970-0906 532 × 64 512 × 60 12.288 × 1.440
S9970-1006 1044 × 64 1024 × 60 24.576 × 1.440
S9970-1007 1044 × 128 1024 × 124 24.576 × 2.976
S9970-1008
Non-cooled
1044 × 256 1024 × 252 24.576 × 6.048
C7020
S9971-0906 532 × 64 512 × 60 12.288 × 1.440
S9971-1006 1044 × 64 1024 × 60 24.576 × 1.440
S9971-1007 1044 × 128 1024 × 124 24.576 × 2.976
C7021
S9971-1008
One-stage
TE-cooled
1044 × 256 1024 × 252 24.576 × 6.048 C7025
General ratings
Parameter S9970 series S9971 series
Pixel size 24 (H) × 24 (V) µm
Vertical clock phase 2-phase
Horizontal clock phase 2-phase
Output circuit One-stage MOSFET source follower
Package 24 pin ceramic DIP (refer to dimensional outlines)
Window*1 Quartz glass S9971-0906/-1006/-1007: sapphire
S9971-1008: AR-coated sapphire
*1: Temporary window type (ex. S9970-0906N) and UV coat type (ex. S9970-0906UV) are available upon request.
(On the temporary window type, a window is temporarily attached by tape to protect the CCD chip and wires.)
1
CCD area image sensor
S9970/S9971 series
2
Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Operating temperature Topr -50 - +30 °C
Storage temperature Tstg -50 - +70 °C
OD voltage VOD -0.5 - +25 V
RD voltage VRD -0.5 - +18 V
ISV voltage VISV -0.5 - +18 V
ISH voltage VISH -0.5 - +18 V
IGV voltage VIG1V, VIG2V -15 - +15 V
IGH voltage VIG1H, VIG2H -15 - +15 V
SG voltage VSG -15 - +15 V
OG voltage VOG -15 - +15 V
RG voltage VRG -15 - +15 V
TG voltage VTG -15 - +15 V
Vertical clock voltage VP1V, VP2V -15 - +15 V
Horizontal clock voltage VP1H, VP2H -15 - +15 V
Operating conditions (MPP mode, Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Output transistor drain voltage VOD 18 20 22 V
Reset drain voltage VRD 11.5 12 12.5 V
Output gate voltage VOG 1 3 5 V
Substrate voltage VSS - 0 - V
Test point (vertical input source) VISV - VRD - V
Test point (horizontal input source) VISH - VRD - V
Test point (vertical input gate) VIG1V, VIG2V -8 0 - V
Test point (horizontal input gate) VIG1H, VIG2H -8 0 - V
High VP1VH, VP2VH 0 4 6
Vertical shift register
clock voltage Low VP1VL, VP2VL -9 -8 -7
V
High VP1HH, VP2HH 0 4 6 Horizontal shift register
clock voltage Low VP1HL, VP2HL -9 -8 -7 V
High VSGH 0 4 6
Summing gate voltage Low VSGL -9 -8 -7
V
High VRGH 0 4 6
Reset gate voltage Low VRGL -9 -8 -7 V
High VTGH 0 4 6
Transfer gate voltage Low VTGL -9 -8 -7
V
External load resistance RL 20 22 24 k
Electrical characteristics (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Signal output frequency fc - 0.1 1 MHz
S9970/S9971-0906 - 750 -
S9970/S9971-1006 - 1500 -
S9970/S9971-1007 - 3000 -
Vertical shift register
capacitance
S9970/S9971-1008
CP1V, CP2V
- 6000 -
pF
S9970/S9971-0906 - 100 -
S9970/S9971-1006 - 180 -
S9970/S9971-1007 - 180 -
Horizontal shift register
capacitance
S9970/S9971-1008
CP1H, CP2H
- 180 -
pF
Summing gate capacitance CSG - 7 - pF
Reset gate capacitance CRG - 7 - pF
S9970/S9971-0906 - 60 -
S9970/S9971-1006 - 100 -
S9970/S9971-1007 - 100 -
Transfer gate
capacitance
S9970/S9971-1008
CTG
- 100 -
pF
Transfer efficiency*2 CTE 0.99995 0.99999 - -
DC output level Vout 12 15 18 V
Output impedance Zo - 5 - k
Power dissipation*3 P - 15 - mW
*2: Charge transfer efficiency per pixel, measured at half of the full well capacity
*3: Power dissipation of the on-chip amplifier plus load resistance
CCD area image sensor
S9970/S9971 series
Spectral response (without window)*12
50
40
30
20
10
0
200 400300 500 600 700
Wavelength (nm)
800 900 100011001200
Quantum efficiency (%)
(Typ. Ta=25 ˚C)
UV-coated
Spectral transmittance characteristics of window material
Wavelength (nm)
Transmittance (%)
0
10
100 200 300 400 500 600 700 800 900 1000
20
30
40
50
60
70
80
90
100 (Typ. Ta=25 ˚C)
Quartz glass
Sapphire
AR-coated sapphire
3
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit
Saturation output voltage Vsat - Fw × Sv - V
Vertical 150 300 - Full well
capacity Horizontal Fw 300 600 - ke-
CCD node sensitivity*4 Sv - 3.5 - µV/e-
+25 °C - 200 3000 Dark current*5
(MPP mode) 0 °C DS - 10 150 e-/pixel/s
Readout noise*6 Nr - 4 18 e-rms
Line binning 75000 150000 -
Dynamic range*7 Area scanning DR 37500 75000 - -
Spectral response range λ - 400 to 1100 - nm
Photo response non-uniformity*8 PRNU - - ±10 %
Point defects*9 - - 0
Cluster defects*10 - - 0
Blemish
Column defects*11
-
- - 0
-
*4: VOD=20 V , Load resistance=22 k
*5: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*6: -40 °C, operating frequency is 80 kHz.
*7: Dynamic range (DR) = Full well capacity / Readout noise
*8: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 560 nm)
*9: White spots
Pixels that generate dark current higher than 3% of the saturation. (Measured at 0 °C, Ts=1 s)
Black spots
Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing one-half
of the saturation charge)
*10: 2 to 9 contiguous defective pixels
*11: 10 or more contiguous defective pixels
KMPDB0244EB KMPDB0310EA
Fixed pattern noise (peak to peak)
Signal × 100
[%]Photo response non-uniformity =
*12: Spectral response with sapphire or AR-coated sapphire is
decreased according to the spectral transmittance charac-
teristic of window material.
CCD area image sensor
S9970/S9971 series
Device structure (conceptual drawing of top view in dimensional outlines)
......
......
......
V
1H
IG1V IG2V ISV SS
RG
RD
OS
OD OG SG
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D11
D12
D13
D14
D15
D16
D17
D18
D19
D20
1
2
3
456
20
23 2224 16 15
V=60, 124, 252
H=512, 1024
ISH
IG1H
IG2H
P1HP2H
13
12
11109
4 blank pixels4 blank pixels
4 optical
black pixels 4 optical
black pixels
512 or 1024
signal out
2 isolation pixels 2 isolation pixels
TG P1V 14
P2V
Pixel format
Left Horizontal Direction Right
Blank Optical Black Isolation Effective Isolation Optical Black Blank
4 4 2 512 or 1024 2 4 4
Top Vertical Direction Bottom
Isolation Effective Isolation
2 60, 124 or 252 2
KMPDC0015EC
4
Dark current vs. temperature
100
10
1
0.1
0.01
-50 -30-40 -20 -10 0
Temperature (˚C)
10 20
Dark current (e-/pixel/s)
(Typ.)
KMPDB0305EA
Window material
Type No. Window material
S9970 series Quartz glass*13
(option: window-less)
S9971-0906/-1006/-1007 Sapphire*14
(option: window-less)
S9971-1008 AR-coated sapphire*14
(option: window-less)
*13: Resin sealing
*14: Hermetic sealing
CCD area image sensor
S9970/S9971 series
Integration period
(shutter has to be open)
P1V
RG
OS
P2V, TG
P1H
P2H, SG
Readout period (shutter has to be closed)
Enlarged view
Tpwv
Tovr
Tpwr
D1 D2 D3 D4 D18 D19 D20
P2V, TG
P1H
P2H, SG
RG
OS
Tpwh, Tpws
123
4.. 63
4..127
4..255
S1..S512
D5..D10, S1..S1024, D11..D17 : S997*/1-0906
: S997*/1-1006/-1007/-1008
6460 + 4 (isolation): S997
*
/1-0906/-1006
128124 + 4 (isolation): S997
*
/1-1007
256252 + 4 (isolation): S997
*
/1-1008
KMPDC0229EB
Parameter Symbol Min. Typ. Max. Unit
S9970/S9971-0906 1.5 4.5 -
S9970/S9971-1006 3.0 9.0 -
S9970/S9971-1007 6.0 18 -
Pulse width*15
S9970/S9971-1008
Tpwv
12 36 -
µs
P1V, P2V, TG
Rise and fall times Tprv, Tpfv 200 - - ns
Pulse width Tpwh 500 5000 - ns
Rise and fall times*15 Tprh, Tpfh 10 - - ns
P1H, P2H
Duty ratio - - 50 - %
Pulse width Tpws 500 5000 - ns
Rise and fall times Tprs, Tpfs 10 - - ns
SG
Duty ratio - - 50 - %
Pulse width Tpwr 100 500 - ns
RG Rise and fall times Tprr, Tpfr 5 - - ns
TG - P1H Overlap time Tovr 3 6 - µs
*15: Symmetrical clock pulses should be overlapped at 50% of maximum amplitude.
Area scanning (large full well mode)
5
Integration period
(shutter has to be open) Vertical binning period
(shutter has to be closed)
3.. 62
3..126
3..254
63
127
255
64
128
256
P1V
P2V, TG
P1H
P2H, SG
Readout period (shutter has to be closed)
60 + 4 (isolation): S997*/1-0906/-1006
124 + 4 (isolation): S997*/1-1007
252 + 4 (isolation): S997*/1-1008
Tpwv
Tovr
Tpwh, Tpws
Tpwr
123
531
1043 532
1044: S997*/1-0906
: S997*/1-1006/-1007/-1008
4..530
4..1042
12
D19D2D1 D20
RG
OS
S1..S512
D3..D10, S1..S1024, D11..D18
: S997*/1-0906
: S997*/1-1006/-1007/-1008
KMPDC0227EB
Timing chart
Line binning
CCD area image sensor
S9970/S9971 series
Dimensional outlines (unit: mm)
S9970-0906
Active area
12.288
31.75 ± 0.3
1
24
12
13
10.05 ± 0.25
0.46 ± 0.05
3.0 ± 0.3
2.54 ± 0.13
27.94 ± 0.13
1.440
1.1 ± 0.3
Photosensitive
surface
Photosensitive surface
1st pin index mark
Active area
24.576
40.64 ± 0.41
112
24 13
14.99 ± 0.25
6.048
1.1 ± 0.3
1st pin index mark
Photosensitive
surface
0.46 ± 0.05
3.0 ± 0.3
2.54 ± 0.13
27.94 ± 0.13
Photosensitive surface
6
KMPDA0195EB
A
40.64 ± 0.41
10.05 ± 0.25
B
1.1 ± 0.3
1st pin index mark
112
24 13
Photosensitive
surface
0.46 ± 0.05
3.0 ± 0.3
2.54 ± 0.13
27.94 ± 0.13
Photosensitive surface
Type No. Active area
A
24.576 (H)
24.576 (H)
B
1.440 (V)
2.976 (V)
S9970-1006
S9970-1007
KMPDA0194EB
KMPDA0193EB
S9970-1008
S9970-1006/-1007
CCD area image sensor
S9970/S9971 series
A
40.64 ± 0.41
112
24 13
14.99 ± 0.25
B
3.2 ± 0.4
C
12.0
4.0
5.0 ± 0.3
0.46 ± 0.05
2.54 ± 0.13
27.94 ± 0.13
7.65 ± 0.5
58.84 ± 0.13
1st pin index mark
Photosensitive surface
TE-cooler
Type No. Active area
A
24.576 (H)
24.576 (H)
B
1.440 (V)
2.976 (V)
C
7.5
7.1
S9971-1006
S9971-1007
Active area 12.288
32.0 ± 0.3
14.99 ± 0.25
0.46 ± 0.05
2.54 ± 0.13
27.94 ± 0.13
1.440
3.2 ± 0.4
7.5
12.0
7.65 ± 0.5
50.0 ± 0.3
4.0
5.0 ± 0.3
Photosensitive surface
TE-cooler
112
24 13
1st pin index mark
7.3 ± 0.63
1.0
6.7 ± 0.63
5.3 ± 0.15
Photosensitive surface
(24×) 0.5 ± 0.05
7.7 ± 0.68
1st pin indication pad
* Size of window that guarantees the transmittance in the "Spectral
transmittance characteristics of window material" graph
6.048
4.0
19.0
22.4 ± 0.3
22.9 ± 0.3
44.0 ± 0.44
52.0
60.0 ± 0.3
2.54 ± 0.13
1
24
12
13
Window 28.6*
Active area 24.576
8.2*
KMPDA0198EB
TE-cooler
7
KMPDA0196EB
KMPDA0197EB
KMPDA0198EB
S9971-1006/-1007
S9971-1008
S9971-0906
CCD area image sensor
S9970/S9971 series
Pin connections
S9970 series S9971 series
Pin No. Symbol Description Symbol Description
Remark
(standard operation)
1 RG Reset gate RG Reset gate
2 RD Reset drain RD Reset drain +12 V
3 OS Output transistor source OS Output transistor source RL=22 k
4 OD Output transistor drain OD Output transistor drain +20 V
5 OG Output gate OG Output gate +3 V
6 SG Summing gate SG Summing gate Same timing as P2H
7 - Th1 Thermistor
8 - Th2 Thermistor
9 P2H CCD horizontal register clock-2 P2H CCD horizontal register clock-2
10 P1H CCD horizontal register clock-1 P1H CCD horizontal register clock-1
11 IG2H Test point (horizontal input gate-2) IG2H Test point (horizontal input gate-2) 0 V
12 IG1H Test point (horizontal input gate-1) IG1H Test point (horizontal input gate-1) 0 V
13 ISH Test point (horizontal input source) ISH Test point (horizontal input source) Shorted to RD
14 P2V CCD vertical register clock-2 P2V CCD vertical register clock-2
15 P1V CCD vertical register clock-1 P1V CCD vertical register clock-1
16 TG*16 Transfer gate TG*16 Transfer gate Same timing as P2V
17 - -
18 - P- TE-cooler-
19 - P+ TE-cooler+
20 SS Substrate (GND) SS Substrate (GND) GND
21 - -
22 ISV Test point (vertical input source) ISV Test point (vertical input source) Shorted to RD
23 IG2V Test point (vertical input gate-2) IG2V Test point (vertical input gate-2) 0 V
24 IG1V Test point (vertical input gate-1) IG1V Test point (vertical input gate-1) 0 V
*16: TG is an isolation gate between vertical register and horizontal register. In standard operation, the same pulse as P2V should
be applied to TG.
Specifications of built-in TE-cooler (Typ.)
Parameter Symbol Condition S9971-0906 S9971-1006/-1007 S9971-1008 Unit
Internal resistance Rint Ta=25 °C 2.8 6.0 1.2
Maximum current*17 Imax Tc*18=Th*19=25 °C 1.5 1.5 3.0 A
Maximum voltage Vmax Tc*18=Th*19=25 °C 4.4 8.8 3.6 V
Maximum heat
absorption*20 Qmax 3.4 6.7 5.1 W
Maximum temperature
of hot side - 70 °C
*17: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that
this value is not a damage threshold. To protect the thermoelectric cooler and maintain stable operation, the supply
current should be less than 60 % of this maximum current.
*18: Temperature of cool side of thermoelectric cooler
*19: Temperature of hot side of thermoelectric cooler
*20: This is a heat absorption when the maximum current is supplied to the TE-cooler.
8
CCD area image sensor
S9970/S9971 series
0
1
2
3
Voltage (V)
CCD temperature (˚C)
4
7
6
5
-40
-30
432
Current (A)
10
-20
-10
0
10
20
30
(Typ . Ta=25 ˚C)
Voltage vs. current
CCD temperature vs. current
0
2
4
6
10
8
-30
2.01.51.00.50
-20
-10
0
10
20
(Typ . Ta=25 ˚C)
Voltage (V)
CCD temperature (˚C)
Current (A)
Voltage vs. Current
CCD temperature vs. Current
0
1
2
3
5
4
-30
2.01.51.00.50
-20
-10
0
10
20
(Typ . Ta=25 ˚C)
Voltage (V)
CCD temperature (˚C)
Current (A)
Voltage vs. current
CCD temperature vs. current
KMPDB0176EB KMPDB0177EB
KMPDB0179EB
S9971-0906 S9971-1006/-1007
S9971-1008
TE-cooler characteristics
9
CCD area image sensor
S9970/S9971 series
Precaution for use (Electrostatic countermeasures)
Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist strap, in
order to prevent electrostatic damage due to electrical charges from friction.
Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
Provide ground lines or ground connection with the work-floor, work-desk and wor k-bench to allow static electricity to
discharge.
Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.
Element cooling/heating temperature gradient rate
When using an external cooler, the element cooling/heating temperature gradient rate should be set at less than 5 K/min.
Specifications of built-in temperature sensor
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A
relation between the thermistor resistance and absolute temperature is expressed by the following equation.
RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2)
R
T1: Resistance at absolute temperature T1 [K]
R
T2: Resistance at absolute temperature T2 [K]
B
T1/T2: B constant [K]
The characteristics of the thermistor used are as follows.
R
298=10 k
B
298/323=3450 K
KMPDB0111EB
10 k
220 240 260
Temperature (K)
Resistance
280 300
100 k
1 M
10
Features
l
C7020: for S9970 series
C7021: for S9971-0906/-1006/-1007
C7025: for S9971-1008
l
Area scanning or full line-binnng operation
l
Readout frequency: 250 kHz
l
Readout noise: 20 e-rms
l
T=50 ˚C (T changes by radiation method.)
Input Symbol Value
Supply
voltage
VD1
VA1+
VA1-
VA2
VD2
Vp
VF
+5 Vdc, 200 mA
+15 Vdc, +100 mA
-15 Vdc, -100 mA
+24 Vdc, 30 mA
+5 Vdc, 30 mA (C7021, C7025)
+5 Vdc, 2.5 A (C7021, C7025)
+12 Vdc, 100 mA (C7021, C7025)
Master start φms HCMOS logic compatible
Master clock φmc HCMOS logic compatible, 1 MHz
Multichannel detector head (C7020, C7021, C7025)
CCD area image sensor S9970/S9971 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples ma y have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means dev elopmental specifications. ©2009 Hamamatsu Photonics K.K.
Cat. No. KMPD1089E07
Nov. 2009 DN 11
Multichannel detector head controller
Type no. Interface Photo Accessories
S7557 SCSI
·SCSI terminator
·Fuse (2.5 A)
·Detector head connection cable
·AC cable
·Software (compatible OS: Windows 98/ME*21)
·Operation manual
S7557-01 USB2.0
·USB cable
·Fuse (2.5 A)
·Detector head connection cable
·AC cable
·Software (compatible OS: Windows 2000/XP/Vista)
·Operation manual
·MOS adapter
Note: SCSI cable and SCSI board (card) are not supplied with the C7557
*21: This software may be run on Windows 2000/NT/XP with a simple task. For information on how to do this, please consult
with our sales office.
Connection example
AC cable (100 to 240 V;
included with the C7557-01
)
PC (Windows 2000/XP/Vista)
C7557-01
USB cable
(Included with
the C7557-01)
Image sensor
+
Multichannel
detector head
(USB 2.0)
Shutter*
timing pulse
Dedicated cable
(Included with the C7557-01)
* Shutter, etc. are not available.
TE CONTROL I/O
SIGNAL I/O
POWER
Trig.
KACCC0402EA