TetraFET D1211UK.02 METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 12.5V - 500MHz SINGLE ENDED H K FEATURES M L J * SIMPLIFIED AMPLIFIER DESIGN E F G * SUITABLE FOR BROAD BAND APPLICATIONS SO8 PACKAGE PIN 1 - SOURCE PIN 2 - DRAIN PIN 3 - DRAIN PIN 4 - SOURCE PIN 5 - SOURCE PIN 6 - GATE PIN 7 - GATE PIN 8 - SOURCE Dim. A B C D E F G mm 4.06 5.08 1.27 0.51 3.56 4.06 1.65 H 0.76 J K L M N P 0.51 1.02 45 0 7 0.20 2.18 4.57 Tol. 0.08 0.08 0.08 0.08 0.08 0.08 0.08 +0.25 -0.00 Min. Max. Max. Min. Max. 0.08 Max. 0.08 Inches 0.160 0.200 0.050 0.020 0.140 0.160 0.065 0.030 0.020 0.040 45 0 7 0.008 0.086 0.180 Tol. 0.003 0.003 0.003 0.003 0.003 0.003 0.003 +0.010 -0.000 Min. Max. Max. Min. Max. 0.003 Max. 0.003 * VERY LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE * HIGH GAIN - 10 dB MINIMUM APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 30W 40V 20V 10A -65 to 150C 200C Prelim.11/00 D1211UK.02 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. Drain-Source Typ. Max. Unit VGS = 0 ID = 10mA VDS = 12.5V VGS = 0 1 mA VGS = 20V VDS = 0 1 mA VGS(th) Gate Threshold Voltage* ID = 100mA VDS = VGS 0.5 5 V gfs Forward Transconductance* VDS = 10V ID = 1A 0.8 S GPS Common Source Power Gain PO = 10W 10 dB Drain Efficiency VDS = 12.5V 50 % VSWR Load Mismatch Tolerance f = 500MHz 20:1 -- BVDSS IDSS IGSS h Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current IDQ = 0.4A Ciss Input Capacitance VDS = 0V Coss Output Capacitance VDS = 12.5V VGS = 0 Crss Reverse Transfer Capacitance VDS = 12.5V VGS = 0 * Pulse Test: VGS = -5V f = 1MHz 40 V 60 pF f = 1MHz 40 pF f = 1MHz 4 pF Pulse Duration = 300 ms , Duty Cycle 2% THERMAL DATA RTHj-case Semelab plc. Thermal Resistance Junction - Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Max. 6C / W Prelim.11/00