D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz. * High Performance Power RF Package. * Specified 380 Volt, 27.12 MHz Characteristics: * Very High Breakdown for Improved Ruggedness. * Output Power = 750 Watts. * Low Thermal Resistance. * Gain = 17dB (Class D) * Nitride Passivated Die for Improved Reliability. * RoHS Compliant All Ratings: TC = 25C unless otherwise specified. MAXIMUM RATINGS Symbol VDSS ID Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C VGS Gate-Source Voltage PD Total Device Dissipation @ TC = 25C TJ,TSTG TL ARF 1511 UNIT 500 Volts 20 Amps 30 Volts 1500 Watts -55 to 175 Operating and Storage Junction Temperature Range C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) 500 On State Drain Voltage 1 (I D(ON) = 10A, VGS = 10V) TYP MAX 5 6 25 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 10A) Visolation RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3.3 UNIT Volts A 100 nA 8 mhos 5.5 TBD Volts 3 5 Volts MAX UNIT MIN TYP 0.10 RJC Junction to Case RJHS Junction to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 0.16 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com C/W 050-4927 Rev D Symbol Characteristic (per package unless otherwise noted) 10-2008 THERMAL CHARACTERISTICS ARF1511 DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr Turn-off Delay Time tf Fall Time EAR Repetitive Avalanche Energy EAS TYP MAX 1200 1400 VDS = 200V f = 1 MHz 150 200 60 90 VGS = 15V 7 VDD = 250V 6 ID = 20A @ 25C 20 RG = 1.6 4.4 VGS = 0V Rise Time td(off) MIN Test Conditions Single Pule Avalanche Energy pF ns 10 2 UNIT mJ 450 3 FUNCTIONAL CHARACTERISTICS Symbol Characteristic GPS Common Source Amplifier Power Gain MIN TYP f = 40.7 MHz 13 15 dB 75 % VGS = 0V Drain Efficiency Test Conditions VDD = 380V Pout = 750W Electrical Ruggedness VSWR 6:1 MAX UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%. 2 Repetitive Rating: Pulse width limited by maximum junction temperature. 3 Starting Tj = +25C, L = 2.25mH, RG = 25, Peak IL = 20A Microsemi reserves the right to change, without notice, the specifications and information contained herein. D3 D1 D1 .100 D3 HAZARDOUS MATERIAL WARNING .175 G3 G1 1.065" 27.05 mm S1D2 ARF1511 S3D4 .100 .075 .100 G1 G3 S1D2 .175 G2 G4 S2 S4 .300 1.065" 27.05 mm .300 .100 .075 .100 S3D4 G2 G4 S2 S4 The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. Thermal Considerations and Package Mounting: .254 050-4927 Rev D 10-2008 .045 .005 Clamp ARF 1511 Heat Sink The rated 1500W power dissipation is only available when the package mounting surface is at 25C and the junction temperature is 175C. The thermal resistance between junctions and case mounting surface is 0.10C/W. When installed, an additional thermal impedance of 0.06C/W between the package base and the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. A simple clamp, and two 6-32 (M3.5) screws can provide the minimum 125 lb. required mounting force. T=4-6 in-lb. Please refer to App Note 1802 "Mounting Instructions for Flangeless Packages."