Data Sheet
V2.0 2014-01-20
CoolSET F3R80
ICE3AR1580VJZ
Off-Line SMPS Current Mode Controller with
integrated 800V CoolMOS™ and Startup cell
(input OVP & frequency jitter) in DIP-7
Power Management & Multimarket
Edition 2014-01-20
Published by Infineon Technologies AG,
81726 Munich, Germany.
© 2014 Infineon Technologies AG
All Rights Reserved.
LEGAL DISCLAIMER
THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE
IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE
REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR
QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION
NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON
TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND
(INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL
PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN
THIS APPLICATION NOTE.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
CoolSET™ F3R80
ICE3AR1580VJZ
Data Sheet 3 V2.0, 2014-01-20
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™,
TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR is licensed by
AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq™ of DECT Forum.
COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™
of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium.
HYPERTERMINAL™ of Hilgraeve Incorporated. IECof Commission Electrotechnique Internationale. IrDA™
of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR
STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc.
MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS
Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of
Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems
Inc. RED HAT Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc.
SOLARIS of Sun Microsystems, Inc. SPANSIONof Spansion LLC Ltd. Symbian™ of Symbian Software
Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX of Tektronix Inc.
TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIXof X/Open Company Limited. VERILOG™, PALLADIUM™
of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER
of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last Trademarks Update 2011-11-11
CoolSET™ F3R80
ICE3AR1580VJZ
Data Sheet 4 V2.0, 2014-01-20
Revision History
Major changes since previous revision
Date
Version
Changed By
Change Description
20 Jan 2014
2.0
Release of first version
We Listen to Your Comments
Is there any information in this document that you feel is wrong, unclear or missing?
Your feedback will help us to continuously improve the quality of our documentation.
Please send your proposal (including a reference to this document title/number) to:
ctdd@infineon.com
CoolSET™ F3R80
ICE3AR1580VJZ
Data Sheet 5 V2.0, 2014-01-20
Table of Contents
Revision History .............................................................................................................................................. 4
Table of Contents ............................................................................................................................................ 5
Off-Line SMPS Current Mode Controller with integrated 800V CoolMOS™ and Startup cell (input OVP &
frequency jitter) in DIP-7 ................................................................................................................. 7
1 Pin Configuration and Functionality ........................................................................................... 8
1.1 Pin Configuration with PG-DIP-7 .................................................................................................... 8
1.2 Pin Functionality ............................................................................................................................. 8
2 Representative Block Diagram .................................................................................................. 10
3 Functional Description............................................................................................................... 11
3.1 Introduction .................................................................................................................................. 11
3.2 Power Management ..................................................................................................................... 11
3.3 Improved Current Mode ............................................................................................................... 12
3.3.1 PWM-OP................................................................................................................................. 14
3.3.2 PWM-Comparator ................................................................................................................... 14
3.4 Startup Phase .............................................................................................................................. 14
3.5 PWM Section ............................................................................................................................... 17
3.5.1 Oscillator ................................................................................................................................. 17
3.5.2 PWM-Latch FF1 ...................................................................................................................... 17
3.5.3 Gate Driver ............................................................................................................................. 17
3.6 Current Limiting ............................................................................................................................ 18
3.6.1 Leading Edge Blanking ........................................................................................................... 19
3.6.2 Propagation Delay Compensation (patented)........................................................................... 19
3.7 Control Unit .................................................................................................................................. 20
3.7.1 Basic and Extendable Blanking Mode ...................................................................................... 20
3.7.2 Active Burst Mode (patented) .................................................................................................. 21
3.7.2.1 Selectable burst entry level ................................................................................................. 22
3.7.2.2 Entering Active Burst Mode ................................................................................................ 23
3.7.2.3 Working in Active Burst Mode ............................................................................................. 23
3.7.2.4 Leaving Active Burst Mode ................................................................................................. 23
3.7.3 Protection Modes .................................................................................................................... 24
3.7.3.1 Vcc OVP, OTP and Vcc under voltage ................................................................................ 25
3.7.3.2 Over load, open loop protection .......................................................................................... 26
3.7.4 Input OVP Mode...................................................................................................................... 27
3.7.5 Action sequence at BV pin ...................................................................................................... 28
4 Electrical Characteristics ........................................................................................................... 30
4.1 Absolute Maximum Ratings .......................................................................................................... 30
4.2 Operating Range .......................................................................................................................... 31
4.3 Characteristics ............................................................................................................................. 31
4.3.1 Supply Section ........................................................................................................................ 31
4.3.2 Internal Voltage Reference ...................................................................................................... 32
4.3.3 PWM Section .......................................................................................................................... 32
4.3.4 Soft Start time ......................................................................................................................... 32
4.3.5 Control Unit ............................................................................................................................. 33
4.3.6 Current Limiting ....................................................................................................................... 34
CoolSET™ F3R80
ICE3AR1580VJZ
Data Sheet 6 V2.0, 2014-01-20
4.3.7 CoolMOS™ Section ................................................................................................................ 34
5 Typical Controller Performance Characteristics ...................................................................... 35
6 CoolMOS™ Performance Characteristics ................................................................................. 36
7 Input Power Curve ..................................................................................................................... 38
8 Outline Dimension ..................................................................................................................... 39
9 Marking ....................................................................................................................................... 40
10 Schematic for recommended PCB layout ................................................................................. 41
CoolSET™ F3R80
ICE3AR1580VJZ
Data Sheet 7 V2.0, 2014-01-20
Off-Line SMPS Current Mode Controller with integrated 800V CoolMOS
and Startup cell (input OVP & frequency jitter) in DIP-7
Product Highlights
800V avalanche rugged CoolMOS™ with startup cell
Active Burst Mode to reach the lowest Standby Power <100mW
Selectable entry and exit burst mode level
Adjustable blanking Window for high load jumps
Frequency jitter and soft driving for low EMI
Adjustable input OVP
Auto Restart protection for over load, over temperature and over voltage
Low Operating temperature down to -40°C
Pb-free lead plating, halogen free mold compound, RoHS compliant
Features
800V avalanche rugged CoolMOSwith Startup Cell
Active Burst Mode for lowest Standby Power
Selectable entry and exit burst mode level
100kHz internally fixed switching frequency with jittering feature
Auto Restart Protection for Over load, Open Loop, VCC Under voltage & Over voltage and Over temperature
Over temperature protection with 50°C hysteresis
Built-in 10ms Soft Start
Built-in 20ms and extendable blanking time for short duration peak power
Propagation delay compensation for both maximum load and burst mode
Adjustable input OVP
Overall tolerance of Current Limiting < ±5%
BiCMOS technology for low power consumption and wide VCC voltage range
Soft gate drive with 50 turn on resistor
Description
The ICE3AR1580VJZ is a modified version of ICE3ARxx80JZ (CoolSET-F3R 800V) in DIP-7 package. It adds in
the input OVP feature but removes the brownout feature and external protection enable feature. In summary, the
ICE3AR1580VJZ is a device running at 100kHz, implemented with input OVP feature, installed with 800V MOSFET
with startup cell and housed in DIP-7 package. It provides good voltage margin of MOSFET, lowest standby power,
selectable burst level, reduced output ripple during burst mode, robust protection with input OVP feature, accurate
maximum power control for both maximum power and burst power, low EMI with frequency jittering and soft gate
drive, built-in and flexible protections, etc.
Applications
Adapter/Charger
Blue Ray/DVD player, Set-top Box, Digital Photo Frame
Auxiliary power supply for Server, PC, Printer, TV, Home theater/Audio System, White Goods, etc
CVCC
CBulk
Converter
DC Output
+
Snubber
Power Management
PWM Controller
Current Mode
85 ... 270 VAC
Typical Application
RSense
FBB
Control Unit
-
CS
VCC
Startup Cell
Precise Low Tolerance Peak
Current Limitation
Drain
CoolSET®- F3R80
(Input OVP & Jitter)
CoolMOS®
GND
ROV2
ROV1 Active Burst Mode
Auto Restart Mode
Input OVP mode
BV
Figure 1: Typical Application
Type
Package
Marking
VDS
FOSC
RDSon1)
230VAC ±15%2)
85-265 VAC2)
ICE3AR1580VJZ
PG-DIP-7
3AR1580VJZ
800V
100kHz
1.5
57W
36W
1) typ @ T=25°C
2) Calculated maximum input power rating at Ta=50°C, Ti=125°C and without copper area as heat sink.
PG-DIP7
CoolSET™ F3R80
ICE3AR1580VJZ
Pin Configuration and Functionality
Data Sheet 8 V2.0, 2014-01-20
1 Pin Configuration and Functionality
1.1 Pin Configuration with PG-DIP-7
Pin
Symbol
Function
1
BV
extended Blanking time & input OVP
2
FBB
Feedback & Burst entry/exit control
3
CS
Current Sense/ 800V CoolMOS Source
4
n.c.
not connected
5
Drain
800V CoolMOS Drain
6
-
(no pin)
7
VCC
Controller Supply Voltage
8
GND
Controller Ground
1
7
8
4
3
2
5
GNDBV
FBB
CS
VCC
n.c. Drain
Figure 2: Pin configuration PG-DIP-7(top view)
1.2 Pin Functionality
BV (extended Blanking time & input OVP)
The BV pin combines the functions of input OVP and extendable blanking time for over load protection. The input
OVP feature is to stop the switching pulse when the input line voltage is higher than the VOVP_ref after the resistor
divider (Refer to Figure 3). The extendable blanking time function is to extend the built-in 20 ms blanking time for
over load protection by adding an external capacitor to ground.
FBB (Feedback & Burst entry control)
The FBB pin combines the feedback function and the burst entry/exit control. The regulation information is
provided by the FBB pin to the internal Protection Unit and the internal PWM-Comparator to control the duty cycle.
The FBB-signal is the only control signal in case of light load at the Active Burst Mode. The burst entry/ exit control
provides an access to select the entry/exit burst mode level.
CS (Current Sense)
The Current Sense pin senses the voltage developed on the shunt resistor inserted in the source of the integrated
CoolMOS™. If CS reaches the internal threshold of the Current Limit Comparator, the Driver output is immediately
switched off. Furthermore the current information is provided for the PWM comparator to realize the Current Mode.
CoolSET™ F3R80
ICE3AR1580VJZ
Pin Configuration and Functionality
Data Sheet 9 V2.0, 2014-01-20
Drain (Drain of integrated CoolMOS™)
Pin Drain is the connection to the Drain of the integrated CoolMOS™.
VCC (Power Supply)
The VCC pin is the positive supply of the IC. The operating range is between 10.5V and 25V.
GND (Ground)
The GND pin is the ground of the controller.
CoolSET™ F3R80
ICE3AR1580VJZ
Representative Block Diagram
Data Sheet 10 V2.0, 2014-01-20
2 Representative Block Diagram
Figure 3: Representative Block Diagram
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 11 V2.0, 2014-01-20
3 Functional Description
All values which are used in the functional description are typical values. For calculating the worst cases the
min/max values which can be found in section 4 Electrical Characteristics have to be considered.
3.1 Introduction
ICE3AR1580VJZ input OVP and jitter 800V version is the modified version of the ICE3ARxx80JZ. It is particular
good for high voltage margin low power SMPS application such as white goods, auxiliary power supply for PC and
server. The major characteristics are that the IC is developed with 800V CoolMOS™ with start up cell, having
adjustable input OVP feature, running at 100kHz switching frequency and packed in DIP-7 package.
The familiar features are BiCMOS technology to reduce power consumption and increase the Vcc voltage range,
cycle by cycle current mode control, built-in 10ms soft start to reduce the stress of switching elements during start up,
built-in 20ms and extended blanking time for short period of peak power before entering protection, active burst mode
for lowest standby power and propagation delay compensation for close power limit between high line and low line,
frequency jittering for low EMI performance, the built-in auto-restart mode protections for open loop, over load, Vcc
OVP, Vcc under voltage, etc.
Besides, it also includes narrowing the feedback voltage swing from 0.5V to 0.3V during burst mode so that the
output voltage ripple can be reduced by 40%, reduction of the fast voltage fall time of the MOSFET by increasing
the soft turn-on time and addition of 50 turn-on resistor, faster start up time by optimizing the Vcc capacitor to
10uF and over temperature protection with 50°C hysteresis.
Furthermore, it includes adjustable input OVP to suppress the abnormal input stress to damage the device,
selectable entry and exit burst mode for smaller entry/exit power to burst mode or even no burst mode is possible and
the propagation delay compensation for burst mode so that the entry/exit burst mode power is close between high
line and low line.
In summary, the ICE3AR1580VJZ provides good voltage margin of MOSFET, lowest standby power, flexible
burst level, reduced output ripple during burst mode, robust for abnormal input stress with input OVP feature,
accurate power limit for both maximum power and burst power, low EMI with frequency jittering and soft gate
drive, built-in and flexible protections, etc. Therefore, ICE3AR1580VJZ is a complete solution for the low power
SMPS application typically for white goods.
3.2 Power Management
Internal Bias
Voltage
Reference
Power Management
5.0V
Undervoltage Lockout
17V
10.5V
Power-Down Reset
Active Burst Mode
Auto Restart
Mode
Startup Cell
VCCDrain
CoolMOS®
Soft Start block
Figure 4: Power Management
The Undervoltage Lockout monitors the external supply voltage VVCC. When the SMPS is plugged to the main line the
internal Startup Cell is biased and starts to charge the external capacitor CVCC which is connected to the VCC pin. This
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 12 V2.0, 2014-01-20
VCC charge current is controlled to 0.9mA by the Startup Cell. When the VVCC exceeds the on-threshold VCCon=17V the
bias circuit are switched on. Then the Startup Cell is switched off by the Undervoltage Lockout and therefore no power
losses present due to the connection of the Startup Cell to the Drain voltage. To avoid uncontrolled ringing at switch-
on, a hysteresis start up voltage is implemented. The switch-off of the controller can only take place when VVCC falls
below 10.5V after normal operation was entered. The maximum current consumption before the controller is activated
is about 200µA.
When VVCC falls below the off-threshold VCCoff=10.5V, the bias circuit is switched off and the soft start counter is
reset. Thus it ensures that at every startup cycle the soft start starts at zero.
The internal bias circuit is switched off if Auto Restart Mode is entered. The current consumption is then
reduced to 320µA.
Once the malfunction condition is removed, this block will then turn back on. The recovery from Auto Restart Mode
does not require re-cycling the AC line.
When Active Burst Mode is entered, the internal Bias is switched off most of the time but the Voltage Reference is
kept alive in order to reduce the current consumption below 62A.
3.3 Improved Current Mode
x3.25
PWM OP
Improved
Current Mode
0.6V
C8
PWM-Latch
CS
FBB
R
S
Q
Q
Driver
Soft-Start Comparator
Figure 5: Current Mode
Current Mode means the duty cycle is controlled by the slope of the primary current. This is done by comparing the
FBB signal with the amplified current sense signal.
t
FBB
Amplified Current Signal
ton
t
0.6V
Driver
Figure 6: Pulse Width Modulation
In case the amplified current sense signal exceeds the FBB signal the on-time ton of the driver is finished by
resetting the PWM-Latch (Figure 6).
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 13 V2.0, 2014-01-20
The primary current is sensed by the external series resistor RSense inserted in the source of the integrated
CoolMOS™. By means of Current Mode regulation, the secondary output voltage is insensitive to the line variations.
The current waveform slope will change with the line variation, which controls the duty cycle.
The external RSense allows an individual adjustment of the maximum source current of the integrated
CoolMOS™.
To improve the Current Mode during light load conditions the amplified current ramp of the PWM-OP is
superimposed on a voltage ramp, which is built by the switch T2, the voltage source V1 and a resistor R1 (see
Figure 7). Every time the oscillator shuts down for maximum duty cycle limitation the switch T2 is closed by VOSC.
When the oscillator triggers the Gate Driver, T2 is opened so that the voltage ramp can start.
PWM OP
0.6V
10k
Oscillator
C8
T2R1
FBB
PWM-Latch
V1
Gate Driver
Voltage Ramp
VOSC
Soft-Start Comparator
time delay
circuit (156ns)
X3.25
PWM Comparator
Figure 7: Improved Current Mode
In case of light load the amplified current ramp is too small to ensure a stable regulation. In that case the
Voltage Ramp is a well defined signal for the comparison with the FBB-signal. The duty cycle is then controlled
by the slope of the Voltage Ramp.
By means of the time delay circuit which is triggered by the inverted VOSC signal, the Gate Driver is switched-off until it
reaches approximately 156ns delay time (Figure 8). It allows the duty cycle to be reduced continuously till 0% by
decreasing VFBB below that threshold.
t
t
VOSC
0.6V
FBB
t
max.
Duty Cycle
Gate
Driver
Voltage
Ramp
156ns time delay
Figure 8: Light Load Conditions
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 14 V2.0, 2014-01-20
3.3.1 PWM-OP
The input of the PWM-OP is applied over the internal leading edge blanking to the external sense resistor RSense
connected to pin CS. RSense converts the source current into a sense voltage. The sense voltage is amplified with a
gain of 3.25 by PWM OP. The output of the PWM-OP is connected to the voltage source V1. The voltage ramp with
the superimposed amplified current signal is fed into the positive inputs of the PWM-Comparator C8 and the Soft-Start-
Comparator (Figure 9).
3.3.2 PWM-Comparator
The PWM-Comparator compares the sensed current signal of the integrated CoolMOS™ with the feedback
signal VFBB (Figure 9). VFBB is created by an external optocoupler or external transistor in combination with the
internal pull-up resistor RFB and provides the load information of the feedback circuitry. When the amplified
current signal of the integrated CoolMOS™ exceeds the signal VFBB the PWM-Comparator switches off the Gate
Driver.
X3.25
PWM OP
Improved
Current Mode
PWM Comparator
CS
Soft-Start Comparator
5V
C8
0.6V
FBB
Optocoupler
RFB
PWM-Latch
Figure 9: PWM Controlling
3.4 Startup Phase
Soft-Start
Comparator
Soft Start
&
G7
C7
Gate Driver
0.6V
x3.25
PWM OP
CS
Soft Start counter
Soft Start
Soft Start finish
SoftS
Figure 10: Soft Start
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 15 V2.0, 2014-01-20
In the Startup Phase, the IC provides a Soft Start period to control the primary current by means of a duty cycle
limitation. The Soft Start function is a built-in function and it is controlled by an internal counter.
Figure 11: Soft Start Phase
When the VVCC exceeds the on-threshold voltage, the IC starts the Soft Start mode (Figure 10).
The function is realized by an internal Soft Start resistor, a current sink and a counter. And the amplitude of the
current sink is controlled by the counter (Figure 12).
5V
RSoftS
Soft Start
Counter
I
2I
4I
SoftS
8I
32I
Figure 12: Soft Start Circuit
After the IC is switched on, the VSoftS voltage is controlled such that the voltage is increased step-wisely (32
steps) with the increase of the counts. The Soft Start counter would send a signal to the current sink control in
every 300µs such that the current sink decrease gradually and the duty ratio of the gate drive increases
gradually. The Soft Start will be finished in 10ms (tSoft-Start) after the IC is switched on. At the end of the Soft Start
period, the current sink is switched off.
Within the soft start period, the duty cycle is increasing from zero to maximum gradually (see Figure 13).
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 16 V2.0, 2014-01-20
t
VSOFTS32
VSoftS
Gate
Driver
t
tSoft-Start
Figure 13: Gate drive signal under Soft-Start Phase
In addition to Start-Up, Soft-Start is also activated at each restart attempt during Auto Restart.
t
t
VSoftS
t
VSOFTS32
4.5V
tSoft-Start
VOUT
VFB
VOUT
tStart-Up
Figure 14: Start Up Phase
The Start-Up time tStart-Up before the converter output voltage VOUT is settled, must be shorter than the Soft-Start Phase
tSoft-Start (Figure 14). By means of Soft-Start there is an effective minimization of current and voltage stresses on the
integrated CoolMOS, the clamp circuit and the output rectifier and it helps to prevent saturation of the transformer
during Start-Up.
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 17 V2.0, 2014-01-20
3.5 PWM Section
Oscillator
Duty Cycle
max
Gate Driver
0.75
Clock
&
G9
1
G8
PWM Section
FF1
R
S
Q
Soft Start
Comparator
PWM
Comparator
Current
Limiting
CoolMOS®
Gate
Frequency
Jitter
Soft Start
Block
Figure 15: PWM Section Block
3.5.1 Oscillator
The oscillator generates a fixed frequency of 100kHz with frequency jittering of ±4% (which is ±4KHz) at a
jittering period of 4ms.
A capacitor, a current source and current sink which determine the frequency are integrated. The charging and
discharging current of the implemented oscillator capacitor are internally trimmed in order to achieve a very accurate
switching frequency. The ratio of controlled charge to discharge current is adjusted to reach a maximum duty cycle
limitation of Dmax=0.75.
Once the Soft Start period is over and when the IC goes into normal operating mode, the switching frequency of the
clock is varied by the control signal from the Soft Start block. Then the switching frequency is varied in range of
100kHz ± 4KHz at period of 4ms.
3.5.2 PWM-Latch FF1
The output of the oscillator block provides continuous pulse to the PWM-Latch which turns on/off the integrated
CoolMOS™. After the PWM-Latch is set, it is reset by the PWM comparator, the Soft Start comparator or the
Current -Limit comparator. When it is in reset mode, the output of the driver is shut down immediately.
3.5.3 Gate Driver
VCC
1
PWM-Latch
CoolMOS®
Gate Driver
Gate
50
Figure 16: Gate Driver
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 18 V2.0, 2014-01-20
The driver-stage is optimized to minimize EMI and to provide high circuit efficiency. This is done by reducing the
switch on slope when exceeding the integrated CoolMOSthreshold. This is achieved by a slope control of the
rising edge at the driver’s output (Figure 17) and adding a 50 gate turn on resistor (Figure 15). Thus the leading
switch on spike is minimized.
t
(internal)
VGate
4.6V
typ. t = 160ns
Figure 17: Gate Rising Slope
Furthermore the driver circuit is designed to eliminate cross conduction of the output stage.
During power up, when VCC is below the undervoltage lockout threshold VVCCoff, the output of the Gate Driver is set
to low in order to disable power transfer to the secondary side.
3.6 Current Limiting
Current Limiting
C10
C12
&
G10
Propagation-Delay
Compensation
Vcsth
PWM Latch
FF1
10k
D1 1pF
PWM-OP
Propagation-Delay
Compensation-Burst
VCSth_burst
CS
LEB
220ns
LEB
180ns
S4
C5
VFB_burst
FBB
or
G13
Active Burst
Mode
Figure 18: Current Limiting Block
There is a cycle by cycle peak current limiting operation realized by the Current-Limit comparator C10. The source
current of the integrated CoolMOS is sensed via an external sense resistor RSense. By means of RSense the source
current is transformed to a sense voltage VSense which is fed into the pin CS. If the voltage VSense exceeds the internal
threshold voltage Vcsth, the comparator C10 immediately turns off the gate drive by resetting the PWM Latch FF1.
A Propagation Delay Compensation is added to support the immediate shut down of the integrated CoolMOS™
with very short propagation delay. Thus the influence of the AC input voltage on the maximum output power can
be reduced to minimal. This compensation applies to both the peak load and burst mode.
In order to prevent the current limit from distortions caused by leading edge spikes, a Leading Edge Blanking
(LEB) is integrated in the current sense path for the comparators C10, C12 and the PWM-OP.
The output of comparator C12 is activated by the Gate G10 if Active Burst Mode is entered. When it is activated,
the current limiting is reduced to Vcsth_burst. This voltage level determines the maximum power level in Active
Burst Mode.
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 19 V2.0, 2014-01-20
3.6.1 Leading Edge Blanking
t
VSense
Vcsth tLEB = 220ns/180ns
Figure 19: Leading Edge Blanking
Whenever the integrated CoolMOSis switched on, a leading edge spike is generated due to the primary-side
capacitances and reverse recovery time of the secondary-side rectifier. This spike can cause the gate drive to
switch off unintentionally. In order to avoid a premature termination of the switching pulse, this spike is blanked out
with a time constant of tLEB = 220ns for normal load and tLEB = 180ns for burst mode.
3.6.2 Propagation Delay Compensation (patented)
In case of overcurrent detection, there is always propagation delay to switch off the integrated CoolMOS™. An
overshoot of the peak current Ipeak is induced to the delay, which depends on the ratio of dI/ dt of the peak
current (Figure 20).
t
ISense
ILimit
tPropagation Delay
IOvershoot1
Ipeak1
Signal1Signal2
IOvershoot2
Ipeak2
Figure 20: Current Limiting
The overshoot of Signal2 is larger than of Signal1 due to the steeper rising waveform. This change in the slope
is depending on the AC input voltage. Propagation Delay Compensation is integrated to reduce the overshoot
due to dI/dt of the rising primary current. Thus the propagation delay time between exceeding the current sense
threshold Vcsth and the switching off of the integrated CoolMOSis compensated over temperature within a wide
input range. Current Limiting is then very accurate.
For example, Ipeak = 0.5A with RSense = 2. The current sense threshold is set to a static voltage level Vcsth=1V without
Propagation Delay Compensation. A current ramp of dI/dt = 0.4A/µs, or dVSense/dt = 0.8V/µs, and a propagation
delay time of tPropagation Delay =180ns leads to an Ipeak overshoot of 14.4%. With the propagation delay compensation,
the overshoot is only around 2% (Figure 21).
0,9
0,95
1
1,05
1,1
1,15
1,2
1,25
1,3
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2
with compensation without compensation
dt
dVSense
s
V
Sense
V
V
Figure 21: Overcurrent Shutdown
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 20 V2.0, 2014-01-20
The Propagation Delay Compensation is realized by means of a dynamic threshold voltage Vcsth (Figure 22). In
case of a steeper slope the switch off of the driver is earlier to compensate the delay.
t
Vcsth
VOSC
Signal1 Signal2
VSense Propagation Delay
max. Duty Cycle
off time
t
Figure 22: Dynamic Voltage Threshold Vcsth
Similarly, the same concept of propagation delay compensation is also implemented in burst mode with reduced
level, Vcsth_burst (Figure 18). With this implementation, the entry and exit burst mode power can be very close
between low line and high line input voltage.
3.7 Control Unit
The Control Unit contains the functions for Active Burst Mode and Auto Restart Mode. The Active Burst Mode and
the Auto Restart Mode both have 20ms internal blanking time. For the over load Auto Restart Mode, the 20ms
blanking time can be further extended by adding an external capacitor at BV pin. With the blanking time, the IC
avoids entering into those two modes accidentally. That buffer time is very useful for the application which works in
short duration of peak power occasionally.
3.7.1 Basic and Extendable Blanking Mode
C11
4.5V
C3
0.9V
C4
4.5V
S1
Control Unit
Auto
Restart
Mode
5.0V
FBB
CBK
Spike
Blanking
30us
Ichg_EB
S2
BV
Counter &
G5
20ms
Blanking
Time
ROV2
#
500CT1
Figure 23: Basic and Extendable Blanking Mode
There are 2 kinds of Blanking mode; basic mode and the extendable mode. The basic mode is a built-in 20ms
blanking time while the extendable mode can extend this blanking time by connecting an external capacitor to the
BV pin. For the extendable mode, the gate G5 remains blocked even though the 20ms blanking time is reached.
After reaching the 20ms blanking time the counter is activated and the switch S1 is turned on to charge the voltage
of BV pin by the constant current source, Ichg_EB. When the voltage of BV pin hits 4.5V, which is sensed by
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 21 V2.0, 2014-01-20
comparator C11, the counter will increase the counter by 1. Then it switches off the switch S1 and turns on the
switch S2. The voltage at BV pin will be discharged through a 500Ω resistor. When the voltage drops to 0.9V which
is sensed by comparator C3, the switch S2 will be turned off and the switch S1 will be turned on. Then the constant
current Ichg_EB will charge the CBK capacitor again. When the voltage at BV hits 4.5V which is sensed by comparator
C11, the counter will increase the count to 2. The process repeats until it reaches total count of 256 (Figure 24).
Then the counter will release a high output signal. When the AND gate G5 detects both high signals at the inputs, it
will activate the 30µs spike blanking circuit and finally the auto-restart mode will be activated.
Figure 24: Waveform at extended blanking time
For example, if CBK=0.1µF, Ichg_EB=720µA, ROV2=15K,
Ichg_EB=Ichg_EB-(4.5V+0.9V)/(2*ROV2)=540 µA
Extended blanking time = 256*(CBK*(4.5V-0.9V)/ Ichg_EB+ CBK*500*ln(4.5/0.9)) = 192ms
Total blanking time = 20ms+192 = 212ms
where Ichg_EB=net charging current to CBK
Note: The above calculation does not include the effect of the input OVP circuit where there is extra biasing
current flowing from the input. That means the extended blanking time will be shortened with the line voltage
change if input OVP circuit is implemented.
3.7.2 Active Burst Mode (patented)
To increase the efficiency of the system at light load, the most effective way is to operate at burst mode. Starting from
CoolSETF3, the IC has been employing the active burst mode and it can achieve the lowest standby power.
ICE3AR1580VJZ adopts the same concept with some more innovative improvements to the feature. It includes the
adjustable entry burst level, close power control between high line and low line and the smaller output ripple during
burst mode.
Most of the burst mode design in the market will provide a fixed entry burst mode level which is a ratio to the
maximum power of the design. ICE3AR1580VJZ provides a more flexible level which can be selected externally. The
provision also includes not entering burst mode.
Propagation delay is the major contributor for the power control variation for DCM flyback converter. It is proved to
be effective in the maximum power control. ICE3AR1580VJZ also apply the same concept in the burst mode.
Therefore, the entry and exit burst mode power is also finely controlled during burst mode.
The feedback control swing during burst mode will affect the output ripple voltage directly. ICE3AR1580VJZ
reduces the swing from 0.5V to 0.3V. Therefore, it would have around 40% improvement for the output ripple.
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 22 V2.0, 2014-01-20
C6a
3.5V
C13
4.0V
Control Unit
Internal
Bias
C6b
3.2V
&
G11
Active Burst
Mode
C5 20 ms Blanking
Time
CFB
C12
CS
Vcsth_burst
VFB_burst
G10 & FF1
FBB
Current Limiting
Burst detect
and adjust
Figure 25: Active Burst Mode
The Active Burst Mode is located in the Control Unit. Figure 24 shows the related components.
3.7.2.1 Selectable burst entry level
The burst mode entry level can be selected by changing the different capacitor CFB at FBB pin. There are 4 levels to
be selected with different capacitor which are targeted for 10%, 6.67%, 4.38% and 0% of the maximum input power.
At the same time, the exit burst levels are targeted to 20%, 13.3%, 9.6% and 0% of the maximum power accordingly.
The corresponding capacitance range is from 6.8nF to 100pF. The below table is the recommended capacitance
range for the entry and exit level with the CFB capacitor.
CFB
Entry level
Exit level
% of Pin_max
VFB_burst
% of Pin_max
Vcsth_burst
>=6.8nF (5%,X7R)
10%
1.60V
20%
0.45V
1nF~2.2nF (1%,COG)
6.67%
1.42V
13.3%
0.37V
220pF~470pF (1%,COG)
4.38%
1.27V
9.6%
0.31V
<=100pF (1%,COG)
0%
never
0%
always
The selection is at the 1st 1ms of the UVLO “ON” (Vcc > 17V) during the 1st start up but it does not detect in the
subsequent re-start due to auto-restart protection. In case there is protection triggered such as input OVP before
starts up, the detection will be held until the protection is removed. When the Vcc reaches the UVLO “ON” in the 1st
start up, the capacitor CFB at FBB pin is charged by a 5V voltage source through the RFB resistor. When the voltage
at FBB pin hits 4.5V, the FF4 will be set, the switch S9 is turned “ON” and the counter will increase by 1. Then the
CFB is discharged through a 500resistor. After reaching 0.5V, the FF4 is reset and the switch S9 is turned “OFF”.
Then the CFB capacitor is charged by the 5V voltage source again until it reaches 4.5V. The process repeats until
the end of 1ms. Then the detection is ended. After that, the total number of count in the counter is compared and
the VFB-burst and the Vcs_burst are selected accordingly (Figure 26)
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 23 V2.0, 2014-01-20
C19
CFB
C20
0.5V
4.5V
Control Unit
S9
FBB
500
RFB
counter
Comparator
logic
VCSth_burst
VFB_burst
1ms
timer
UVLO during
1st startup
5V
S Q
R
UVLO
FF4
Figure 26: Entry Burst Mode detection
3.7.2.2 Entering Active Burst Mode
The FBB signal is kept monitoring by the comparator C5 (Figure 25). During normal operation, the internal
blanking time counter is reset to 0. When FBB signal falls below VFB_burst, it starts to count. When the counter reaches
20ms and FBB signal is still below VFB_burst, the system enters the Active Burst Mode. This time window prevents a sudden
entering into the Active Burst Mode due to large load jumps.
After entering Active Burst Mode, a burst flag is set and the internal bias is switched off in order to reduce the
current consumption of the IC to about 62A.
It needs the application to enforce the VCC voltage above the Undervoltage Lockout level of 10.5V such that the
Startup Cell will not be switched on accidentally. Or otherwise the power loss will increase drastically. The
minimum VCC level during Active Burst Mode depends on the load condition and the application. The lowest
VCC level is reached at no load condition.
3.7.2.3 Working in Active Burst Mode
After entering the Active Burst Mode, the FBB voltage rises as VOUT starts to decrease, which is due to the
inactive PWM section. The comparator C6a monitors the FBB signal. If the voltage level is larger than 3.5V, the
internal circuit will be activated; the Internal Bias circuit resumes and starts to provide switching pulse. In Active
Burst Mode the gate G10 is released and the current limit is reduced to Vcsth_burst (Figure 3 and Figure 25). In one
hand, it can reduce the conduction loss and the other hand, it can reduce the audible noise. If the load at VOUT is
still kept unchanged, the FBB signal will drop to 3.2V. At this level the C6b deactivates the internal circuit again
by switching off the Internal Bias. The gate G11 is active again as the burst flag is set after entering Active Burst
Mode. In Active Burst Mode, the FBB voltage is changing like a saw tooth between 3.2V and 3.5V (Figure 27).
3.7.2.4 Leaving Active Burst Mode
The FBB voltage will increase immediately if there is a high load jump. This is observed by the comparator C13
(Figure 25). Since the current limit is reduced to 31%~45% of the maximum current during active burst mode, it
needs a certain load jump to raise the FBB signal to exceed 4.0V. At that time the comparator C5 resets the
Active Burst Mode control which in turn blocks the comparator C12 by the gate G10. The maximum current can
then be resumed to stabilize VOUT.
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 24 V2.0, 2014-01-20
VFB_burst
3.5V
4.0V
VFBB
t
t
Vcsth_burst
Vcsth
VCS
10.5V
VVCC t
t
620uA
IVCC
t
5.7mA
VOUT
t
20ms Blanking Time
Current limit level during
Active Burst Mode
3.2V
Entering
Active Burst
Mode
Blanking Timer
Leaving Active
Burst Mode
Figure 27: Signals in Active Burst Mode
3.7.3 Protection Modes
The IC provides Auto Restart mode as the major protection feature. Auto Restart mode can prevent the SMPS from
destructive states. There are 3 kinds of auto restart mode; normal auto restart mode, odd skip auto restart mode
and non switch auto restart mode. Odd skip auto restart mode is that there is no detect of fault and no switching
pulse for the odd number restart cycle. At the even number of restart cycle the fault detect and soft start switching
pulses maintained. If the fault persists, it would continue the auto-restart mode. However, if the fault is removed,
it can release to normal operation only at the even number auto restart cycle (Figure 28).
10.5V
t
VCS
t
VVCC
17V
Fault
detected No detect Startup and detect
No detect
Figure 28: Odd skip auto restart waveform
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 25 V2.0, 2014-01-20
Non switch auto restart mode is similar to odd skip auto restart mode except the start up switching pulses are also
suppressed at the even number of the restart cycle. The detection of fault still remains at the even number of the
restart cycle. When the fault is removed, the IC will resume to normal operation at the even number of the restart
cycle (Figure 29).
10.5V
t
VCS
t
VVCC
17V
Fault
detected No detect Startup and detect
No detect
No switching
Figure 29: Non switch auto restart waveform
The main purpose of the odd skip auto restart is to extend the restart time such that the power loss during auto
restart protection can be reduced. This feature is particularly good for smaller Vcc capacitor where the restart time
is shorter.
The following table lists the possible system failures and the corresponding protection modes.
VCC Over voltage (1)
Odd skip Auto Restart Mode
VCC Over voltage (2)
Odd skip Auto Restart Mode
Over load
Odd skip Auto Restart Mode
Open Loop
Odd skip Auto Restart Mode
VCC Undervoltage
Normal Auto Restart Mode
Short Optocoupler
Normal Auto Restart Mode
Over temperature
Non switch Auto Restart Mode
3.7.3.1 Vcc OVP, OTP and Vcc under voltage
C1
20.5V
C4
4.5V
Voltage
Reference
Control Unit
Auto Restart
Mode Reset
VVCC < 10.5V
FBB
softs_period
Spike
Blanking
30μs
Thermal Shutdown
Tj >130°C
Auto Restart
mode
&
G1
VCC
C2 120μs blanking
time
25.5V
Figure 30: Vcc OVP and OTP
There are 2 types of Vcc over voltage protection; Vcc OVP (1) and Vcc OVP (2). The Vcc OVP (1) takes action
only during the soft start period. The Vcc OVP (2) takes the action in any conditions.
Vcc OVP (1) condition is when VVCC voltage is > 20.5V, VFBB voltage is > 4.5V and during soft start period, the IC
enters into odd skip Auto Restart Mode. This condition likely happens during start up at open loop fault (Figure 30).
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 26 V2.0, 2014-01-20
Vcc OVP (2) condition is when VVCC voltage is > 25.5V, the IC enters into odd skip Auto Restart Mode (Figure
30).
The over temperature protection OTP is sensed inside the controller IC. The Thermal Shutdown block keeps on
monitoring the junction temperature of the controller. After detecting a junction temperature higher than 130°C, the
IC will enter into the non switch Auto Restart mode. The ICE3AR1580VJZ has also implemented with a 50°C
hysteresis. That means the IC can only be recovered when the controller junction temperature is dropped 50°C
lower than the over temperature trigger point (Figure 30).
The VCC undervoltage and short opto-coupler will go into the normal auto restart mode inherently.
In case of VCC undervoltage, the Vcc voltage drops indefinitely. When it drops below the Vcc under voltage lock out
“OFF” voltage (10.5V), the IC will turn off the IC and the startup cell will turn on again. Then the Vcc voltage will be
charged up to UVLO “ON” voltage (17V) and the IC turns on again provided the startup cell charge up current is not
drained by the fault. If the fault is not removed, the Vcc will continue to drop until it hits UVLO “OFF” voltage and the
restart cycle repeats.
Short Optocoupler can lead to Vcc undervoltage because once the opto-coupler (transistor side) is shorted, the
feedback voltage will drop to zero and there will be no switching pulse. Then the Vcc voltage will drop same as
the Vcc undervoltage.
3.7.3.2 Over load, open loop protection
C11
4.5V
C3
0.9V
C4
4.5V
S1
Control Unit
5.0V
FBB
CBK Spike
Blanking
30us
Ichg_EB
S2
BV
counter
&
G5
20ms
Blanking
Time
Voltage
Reference
Auto Restart
Mode Reset
VVCC < 10.5V
Auto
Restart
Mode
ROV2
#
500CT1
Figure 31: Over load, open loop protection
In case of Overload or Open Loop, the FBB exceeds 4.5V which will be observed by comparator C4. Then the built-
in blanking time counter starts to count. When it reaches 20ms, the extended blanking time counter CT1 is
activated. The switch S2 is turned on and the voltage at the BV pin will be discharged through 500 resistor. When
it drops to 0.9V, the switch S2 is turned off and the Switch S1 is turned on. Then a constant current source Ichg_EB
will start to charge up BV pin. When the voltage hits 4.5V which is monitored by comparator C11, the switch S1 is
turned off and the count will increase by 1. Then the switch S2 will turn on again and the voltage will drop to 0.9V
and rise to 4.5V again. The count will then increase by 1 again. When the total count reaches 256, the counter
CT1 will stop and it will release a high output signal. When both the input signals at AND gate G5 is high, the
odd skip Auto Restart Mode is activated after the 30µs spike blanking time (Figure 31).
The total blanking time depends on the addition of the built-in and the extended blanking time. If there is no CBK
capacitor at BV pin, the count will finish within 0.1ms and the equivalent blanking time is just the built-in time of
20ms.
Since the BV pin is a multi-function pin, it would share with different functions. The resistor ROV2 from input OVP
feature application may however affect the extendable blanking time (Figure 31). Thus it should take the ROV2
into the calculation of the extendable blanking time. For example the extended blanking time may be changed
from 181ms to 212ms for 42.2K to 15K ROV2 resistor. The list below shows one particular CBK, ROV2 vs
blanking time.
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 27 V2.0, 2014-01-20
CBK
ROV2
Extended blanking time
Overall blanking time
0.1uF
42.2K
161ms
181ms
0.1uF
39.6K
162ms
182ms
0.1uF
15K
192ms
212ms
Another factor to affect the extended blanking time is the input voltage through the ROV1 and ROV2. It would, on the
contrary, reduce the extended blanking time.
3.7.4 Input OVP Mode
When the AC input voltage is out of the designed operating range (e.g. > 300Vac), the voltage at the input bulk
capacitor will increase at the same time. If the MOSFET keeps on switching, the drain voltage may be too high and
the MOSFET will exceed the maximum voltage rating and causes damages. The input OVP mode is to prevent this
phenomenon. The IC will sense the input voltage through the input bulk capacitor to the BV pin by 2 potential divider
resistors, ROV1 and ROV2 (Figure 32). During normal operation, the BV pin voltage is lower than VOVP_ref (1.98V). The
output of C14a is low and the output of G21 is high. Together with UVLO high signal (IC operating) the “Sinput of
FF5 is low. The “Q” output of FF5 is low and the input OVP mode remains not activated. When there is an input over
voltage case, the input bulk capacitor voltage is increased and the BV voltage is increased to larger than VOVP_ref. The
output of C14a is high and the output of G21 is low. If the OVP persists for 40s (blanking time) and the UVLO
signal is still high, the output of G20 is high. Then the “S” input of FF5 is high and the “Q” output of FF5 is high. The
input OVP mode is set. The case of UVLO signal low is not considered as it means the IC is not working.
C14a
Control Unit
Input OVP
BV
ROV1
ROV2
Vbulk
UVLO
Q
R
S
FF5
G20
G21
C14b
Q
1.98V
1.91V
5µs Blanking
time
G22
400µs Blanking
time
Figure 32: Input OVP detection circuit
Once the system enters the input OVP mode, there will be no switching pulse and the IC keeps on monitoring the
BV signal. If the input OVP signal is not reset, there is no switching pulse in each restart cycle (Figure 33).
10.5V
t
VCS
t
VVCC
17V
No switching
VBV
1.91V
Input OVP
detected
Input OVP
released
t
Switching start at the
following restart cycle
1.98V
Figure 33: Input OVP mode waveform
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 28 V2.0, 2014-01-20
The IC implemented with hysteresis voltage to leave the input OVP protection. The hysteresis voltage at BV pin is
VOVP_hys (0.07V) and the input OVP reset voltage at BV pin is VOVP_ref - VOVP_hys; i.e. 1.91V. After the input OVP
protection is triggered, the voltage at BV pin needs to drop VOVP_hys from VOVP_ref before it can be reset.
When the BV voltage drops below 1.91V, the output of C14b and G22 are high (Figure 32). The “Rinput of the
FF5 is high. Then the “Q” output of FF5 is low. The input OVP is reset. The system will turn on with soft start in the
coming restart cycle when Vcc reaches the Vcc “ON” voltage at 17V.
The input OVP feature can also be applied to customer defined protection circuit by pulling up the BV pin to
larger than VOVP_ref.
The formula to calculate the ROV1 and ROV2 are as below.
Set ROV1 to a particular value.
ROV2= ROV1* VOVP_ref /(VOVP - VOVP_ref)
The formula to calculate the input OVP reset voltage is as below.
VOVP_reset=(VOVP_ref -VOVP_hys)*( ROV1+ROV2)/ROV2
where VOVP: input over voltage; VOVP_reset: input over reset voltage; VOVP_ref: IC reference voltage for OVP; VOVP_hys: IC
hysteresis voltage for OVP; ROV1 and ROV2: resistors divider from input voltage to BV pin.
For example,
VOVP_ref=1.98V, VOVP_hys=0.07V
If input OVP voltage, VOVP=424Vdc (300Vac), ROV1=9M, ROV2=42.2K
Input OVP reset, VOVP_reset=408Vdc (289Vac)
To disable input OVP feature, the BV pin must be connected with a resistor ROV2≥15KΩ to IC ground and
remove ROV1.
(Remark: ROV2 must be always ≥15KΩ in all conditions, otherwise overload protection may not work)
3.7.5 Action sequence at BV pin
Since there are 2 functions at the same BV pin; input OVP and extended blanking time, the action of sequence is
whichever starts first takes the priority. When the “Extended blanking time” is triggered by OLP and follows with the
“Input OVP” triggering, then the OLP will continue to work until it ends. The IC would recheck the signal at BV pin
after one skip cycle. If the BV signal exceeds the input OVP threshold, it would go to input OVP mode.
CoolSET™ F3R80
ICE3AR1580VJZ
Functional Description
Data Sheet 29 V2.0, 2014-01-20
10.5V
t
VCS
t
VVCC
17V
No switching
VBV
1.91V
t
1.98V
VFB
t
4.5V Extended OLP
blanking time
OLP
detected OLP
released
Input OVP
released
Input OVP
0.9V
4.5V
Input OVP fault started( but
overridden by extended blanking
OLP time) Input OVP
detected
Switching start at the
following restart cycle
Built in 20ms OLP
blanking time
Figure 34: Input OVP during extended blanking time
One typical case happened is that the overload happened first and it follows with the “Input OVP” feature at the 1st
20ms blanking time. Since the overload protection is still not triggered at the 1st 20ms blanking time period and the
extended blanking time is not running, the input OVP mode will trigger right away.
10.5V
t
VCS
t
VVCC
17V
No switching
VBV
1.91V
t
Switching start at the
following restart cycle
1.98V
VFB
t
4.5V
Input OVP
detected
Built in 20ms OLP
blanking time
OLP
detected OLP
released
Input OVP
released
Input OVP
Figure 35: Input OVP during first 20ms blanking time
CoolSET™ F3R80
ICE3AR1580VJZ
Electrical Characteristics
Data Sheet 30 V2.0, 2014-01-20
4 Electrical Characteristics
Note: All voltages are measured with respect to ground (Pin 8). The voltage levels are valid if other ratings
are not violated.
4.1 Absolute Maximum Ratings
Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of
the integrated circuit. For the same reason make sure, that any capacitor that will be connected to pin 7
(VCC) is discharged before assembling the application circuit. Ta=25°C unless otherwise specified.
Parameter
Symbol
Limit Values
Unit
Remarks
min.
max.
Drain Source Voltage
VDS
-
800
V
Pulse drain current, tp limited by Tjmax
ID_Puls
-
7.5
A
Avalanche energy, repetitive tAR limited
by max. Tj=150°C1)
EAR
-
0.07
mJ
Avalanche current, repetitive tAR limited
by max. Tj=150°C
IAR
-
2.4
A
VCC Supply Voltage
VVCC
-0.3
27
V
FBB Voltage
VFBB
-0.3
5.5
V
BV Voltage
VBV
-0.3
5.5
V
CS Voltage
VCS
-0.3
5.5
V
Junction Temperature
Tj
-40
150
°C
Controller & CoolMOS™
Storage Temperature
TS
-55
150
°C
Thermal Resistance
Junction -Ambient
RthJA
-
96
K/W
Soldering temperature,
wavesoldering only allowed at leads
Tsold
-
260
°C
1.6mm (0.063in.) from
case for 10s
ESD Capability (incl. Drain Pin)
VESD
-
2
kV
Human body model2)
1) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f
2) According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5K series resistor)
CoolSET™ F3R80
ICE3AR1580VJZ
Electrical Characteristics
Data Sheet 31 V2.0, 2014-01-20
4.2 Operating Range
Note: Within the operating range the IC operates as described in the functional description.
Parameter
Symbol
Limit Values
Unit
Remarks
min.
max.
VCC Supply Voltage
VVCC
VVCCoff
25
V
Max value limited due to Vcc OVP
Junction Temperature of
Controller
TjCon
-40
130
°C
Max value limited due to thermal
shut down of controller
Junction Temperature of
CoolMOS
TjCoolMOS
-40
150
°C
4.3 Characteristics
4.3.1 Supply Section
Note: The electrical characteristics involve the spread of values within the specified supply voltage and
junction temperature range TJ from 40 °C to 125 °C. Typical values represent the median values,
which are related to 25°C. If not otherwise stated, a supply voltage of VCC = 17 V is assumed.
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
Start Up Current
IVCCstart
-
200
300
μA
VVCC =16V
VCC Charge Current
IVCCcharge1
-
-
5.0
mA
VVCC = 0V
IVCCcharge2
0.55
0.9
1.60
mA
VVCC = 1V
IVCCcharge3
0.38
0.7
-
mA
VVCC =16V
Leakage Current of
Start Up Cell and CoolMOS™
IStartLeak
-
0.2
50
μA
VDrain = 650V
at Tj=100°C1)
Supply Current with
Inactive Gate
IVCCsup1
-
1.9
3.2
mA
Supply Current with Active Gate
IVCCsup2
-
5.7
7.8
mA
IFBB = 0A
Supply Current in
Auto Restart Mode with Inactive
Gate
IVCCrestart
-
320
-
μA
IFBB = 0A
Supply Current in Active Burst
Mode with Inactive Gate
IVCCburst1
-
620
950
μA
VFBB = 2.5V
IVCCburst2
-
620
950
μA
VVCC = 11.5V, VFBB
= 2.5V
VCC Turn-On
ThresholdVCC Turn-Off
Threshold VCC Turn-On/Off
Hysteresis
VVCCon
VVCCoff
VVCChys
16.0
9.8
-
17.0
10.5
6.5
18.0
11.2
-
V
V
V
1) The parameter is not subjected to production test - verified by design/characterization
CoolSET™ F3R80
ICE3AR1580VJZ
Electrical Characteristics
Data Sheet 32 V2.0, 2014-01-20
4.3.2 Internal Voltage Reference
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
Trimmed Reference Voltage
VREF
4.90
5.00
5.10
V
measured at pin FBB
IFBB = 0
4.3.3 PWM Section
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
Fixed Oscillator Frequency
fOSC1
87
100
113
kHz
fOSC2
90
100
108
kHz
Tj = 25°C
Frequency Jittering Range
fjitter
-
±4.0
-
kHz
Tj = 25°C
Frequency Jittering period
Tjitter
-
4.0
-
ms
Tj = 25°C
Max. Duty Cycle
Dmax
0.70
0.75
0.80
Min. Duty Cycle
Dmin
0
-
-
VFBB < 0.3V
PWM-OP Gain
AV
3.05
3.25
3.45
Voltage Ramp Offset
VOffset-Ramp
-
0.60
-
V
VFBB Operating Range
Min Level
VFBmin
-
0.7
-
V
VFBB Operating Range Max
level
VFBmax
-
-
4.3
V
CS=1V, limited by
Comparator C41)
FBB Pull-Up Resistor
RFB
9.0
15.4
23.0
k
1) The parameter is not subjected to production test - verified by design/characterization
4.3.4 Soft Start time
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
Soft Start time
tSS
-
10
-
ms
CoolSET™ F3R80
ICE3AR1580VJZ
Electrical Characteristics
Data Sheet 33 V2.0, 2014-01-20
4.3.5 Control Unit
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
Input OVP reference voltage for
comparator C14a
VOVP_ref
1.90
1.98
2.06
V
Tj = 25°C
Input OVP hysteresis C14b
VOVP_hys
0.07
V
Tj = 25°C
Blanking time voltage lower limit
for Comparator C3
VBKC3
0.80
0.90
1.00
V
Blanking time voltage upper limit
for Comparator C11
VBKC11
4.28
4.50
4.72
V
Over Load Limit for Comparator C4
VFBC4
4.28
4.50
4.72
V
Entry Burst select High level for
Comparator C19
VFBC19
4.28
4.50
4.72
V
Entry Burst select Low level for
Comparator C20
VFBC20
0.40
0.50
0.60
V
Active Burst Mode
Entry Level for
Comparator C5
10% Pin_max
VFB_burst1
1.51
1.60
1.69
V
< 7 counts
6.67% Pin_max
VFB_burst2
1.34
1.42
1.50
V
8 ~ 39 counts
4.38% Pin_max
VFB_burst3
1.20
1.27
1.34
V
40 ~ 191 counts
Active Burst Mode High Level for
Comparator C6a
VFBC6a
3.35
3.50
3.65
V
In Active Burst Mode
Active Burst Mode Low Level for
Comparator C6b
VFBC6b
3.06
3.20
3.34
V
Active Burst Mode Level for
Comparator C13
VFBC13
3.85
4.00
4.15
V
Overvoltage Detection Limit for
Comparator C1
VVCCOVP1
19.5
20.5
21.5
V
VFBB = 5V, during soft
start
Overvoltage Detection Limit for
Comparator C2
VVCCOVP2
25.0
25.5
26.3
V
Charging current for extended
blanking time
Ichg_EB
460
720
864
μA
Thermal Shutdown1)
TjSD
130
140
150
°C
Controller
Hysteresis for thermal Shutdown1)
TjSD_hys
-
50
-
°C
Built-in Blanking Time for Overload
Protection or enter Active Burst Mode
tBK
-
20
-
ms
Timer for entry burst select
tEBS
-
1
-
ms
Spike Blanking Time for Auto-Restart
Protection
tSpike
-
30
-
μs
1) The parameter is not subjected to production test - verified by design/characterization. The thermal shutdown temperature refers to the
junction temperature of the controller.
Note: The trend of all the voltage levels in the Control Unit is the same regarding the deviation except
VVCCOVP and VVCCPD
CoolSET™ F3R80
ICE3AR1580VJZ
Electrical Characteristics
Data Sheet 34 V2.0, 2014-01-20
4.3.6 Current Limiting
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
Peak Current Limitation
(incl. Propagation Delay)
Vcsth
0.98
1.06
1.13
V
dVsense / dt = 0.6Vs
(Figure 21)
Peak Current
Limitation during
Active Burst Mode
20% Pin_max
Vcsth_burst1
0.37
0.45
0.51
V
< 7 counts
13.3% Pin_max
Vcsth_burst2
0.30
0.37
0.44
V
8 ~ 39 counts
9.6% Pin_max
Vcsth_burst3
0.23
0.31
0.37
V
40 ~ 191 counts
Leading Edge
Blanking
Normal mode
tLEB_normal
-
220
-
ns
Burst mode
tLEB_burst
-
180
-
ns
CS Input Bias Current
ICSbias
-1.5
-0.2
-
μA
VCS =0V
4.3.7 CoolMOS™ Section
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
Drain Source Breakdown Voltage
V(BR)DSS
800
870
-
-
-
-
V
V
Tj = 2C
Tj = 11C1)
Drain Source On-Resistance
RDSon
-
-
1.5
3.31
1.71
3.79
Tj = 2C
Tj = 125°C1)
at ID = 1.08A
Effective output capacitance, energy
related
Co(er)
-
16
-
pF
VDS = 0V to 480V
Rise Time
trise
-
302)
-
ns
Fall Time
tfall
-
302)
-
ns
1) The parameter is not subjected to production test - verified by design/characterization
2) Measured in a Typical Flyback Converter Application
CoolSET™ F3R80
ICE3AR1580VJZ
Typical Controller Performance Characteristics
Data Sheet 35 V2.0, 2014-01-20
5 Typical Controller Performance Characteristics
Characterisrtic graphs are normalized at Ta=25°C
Figure 36: Line OVP (VOVP_ref) vs. Ta
Figure 37: Hystersis of Line OVP (VOVP_hys) vs. Ta
CoolSET™ F3R80
ICE3AR1580VJZ
CoolMOS™ Performance Characteristics
Data Sheet 36 V2.0, 2014-01-20
6 CoolMOS™ Performance Characteristics
Figure 38: Safe Operating Area (SOA) curve for ICE3AR1580VJZ
Figure 39: SOA temperature derating coefficient curve
CoolSET™ F3R80
ICE3AR1580VJZ
CoolMOS™ Performance Characteristics
Data Sheet 37 V2.0, 2014-01-20
Figure 40: Power dissipation; Ptot=f(Ta)
Figure 41: Drain-source breakdown voltage; VBR(DSS)=f(Tj), ID=0.25mA
CoolSET™ F3R80
ICE3AR1580VJZ
Input Power Curve
Data Sheet 38 V2.0, 2014-01-20
7 Input Power Curve
Two input power curves giving the typical input power versus ambient temperature are showed below;
Vin=85Vac~265Vac (Figure 42) and Vin=230Vac+/-15% (Figure 43). The curves are derived based on a typical
discontinuous mode flyback model which considers either 50% maximum duty ratio or 100V maximum
secondary to primary reflected voltage (higher priority). The calculation is based on no copper area as heatsink
for the device. The input power already includes the power loss at input common mode choke, bridge rectifier
and the CoolMOS. The device saturation current (ID_Puls @ Tj=125°C) is also considered.
To estimate the output power of the device, it is simply multiplying the input power at a particular operating ambient
temperature with the estimated efficiency for the application. For example, a wide range input voltage (Figure 42),
operating temperature is 5C, estimated efficiency is 85%, then the estimated output power is 30W (36W * 85%).
Figure 42: Input power curve Vin=85~265Vac; Pin=f(Ta)
Figure 43: Input power curve Vin=230Vac; Pin=f(Ta)
CoolSET™ F3R80
ICE3AR1580VJZ
Outline Dimension
Data Sheet 39 V2.0, 2014-01-20
8 Outline Dimension
Figure 44: PG-DIP-7 (Pb-free lead plating Plastic Dual-in-Line Outline)
CoolSET™ F3R80
ICE3AR1580VJZ
Marking
Data Sheet 40 V2.0, 2014-01-20
9 Marking
Figure 45: Marking for ICE3AR1580VJZ
CoolSET™ F3R80
ICE3AR1580VJZ
Schematic for recommended PCB layout
Data Sheet 41 V2.0, 2014-01-20
10 Schematic for recommended PCB layout
Figure 46: Schematic for recommended PCB layout
General guideline for PCB layout design using F3 CoolSET™ (refer to Figure 46):
1. “Star Ground “at bulk capacitor ground, C11:
“Star Ground means all primary DC grounds should be connected to the ground of bulk capacitor C11
separately in one point. It can reduce the switching noise going into the sensitive pins of the CoolSET™
device effectively. The primary DC grounds include the followings.
a. DC ground of the primary auxiliary winding in power transformer, TR1, and ground of C16 and Z11.
b. DC ground of the current sense resistor, R12
c. DC ground of the CoolSET™ device, GND pin of IC11; the signal grounds from C13, C14, C15 and collector
of IC12 should be connected to the GND pin of IC11 and then “star “connect to the bulk capacitor ground.
d. DC ground from bridge rectifier, BR1
e. DC ground from the bridging Y-capacitor, C4
2. High voltage traces clearance:
High voltage traces should keep enough spacing to the nearby traces. Otherwise, arcing would incur.
a. 400V traces (positive rail of bulk capacitor C11) to nearby trace: > 2.0mm
b. 600V traces (drain voltage of CoolSET IC11) to nearby trace: > 2.5mm
3. Filter capacitor close to the controller ground:
Filter capacitors, C13, C14 and C15 should be placed as close to the controller ground and the controller
pin as possible so as to reduce the switching noise coupled into the controller.
CoolSET™ F3R80
ICE3AR1580VJZ
Schematic for recommended PCB layout
Data Sheet 42 V2.0, 2014-01-20
Guideline for PCB layout design when >3KV lightning surge test applied (refer to Figure 46):
1. Add spark gap
Spark gap is a pair of saw-tooth like copper plate facing each other which can discharge the accumulated
charge during surge test through the sharp point of the saw-tooth plate.
a. Spark Gap 3 and Spark Gap 4, input common mode choke,
L1: Gap separation is around 1.5mm (no safety concern)
b. Spark Gap 1 and Spark Gap 2, Live / Neutral to GROUND:
These 2 Spark Gaps can be used when the lightning surge requirement is>6KV.
230Vac input voltage application, the gap separation is around 5.5mm
115Vac input voltage application, the gap separation is around 3mm
2. Add Y-capacitor (C2 and C3) in the Live and Neutral to ground even though it is a 2-pin input
3. Add negative pulse clamping diode, D11 to the Current sense resistor, R12:
The negative pulse clamping diode can reduce the negative pulse going into the CS pin of the CoolSET
and reduce the abnormal behavior of the CoolSET™. The diode can be a fast speed diode such as 1N4148.
The principle behind is to drain the high surge voltage from Live/Neutral to Ground without passing through
the sensitive components such as the primary controller, IC11.
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Infineon:
ICE3AR1580VJZXKLA1 ICE3AR1580VJZ