JE-1503-9050-6 - 3M - Datasheet.Live

1. Product profile

1.1 General description

AC Thyristor power switch in a SOT223 surface- m ou ntable plastic package with

self-protective capabilities against low and high energy transients

1.2 Features and benefits

Common terminal on mounting base

allows multiple ACTs on shared

cooling pad

Exclusive negativ e ga te trigge rin g

Full cycle AC conduction

Remote gate separates the gate driver

from the effects of the load current

Safe clamping of low energy

over-voltage transients

Self-protectiv e tu rn -o n du rin g high

energy voltage transients

Surface-mountable package

Ve ry high noise immunity

1.3 Applications

Contactors, circuit breakers, valves,

dispensers and door locks

Fan motor circuits

Lower-power highly inductive, resistive

and safety loads

Pump motor circuits

1.4 Quick reference data

ACT108W-600E

AC Thyristor power switch

Rev. 5 — 13 July 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDRM repetitive peak

off-state voltage --600V

IGT gate trigger

current VD=12V; I

T= 100 mA;

LD+ G-; Tj=25°C;

see Figure 10

1- 10mA

VD=12V; I

T= 100 mA;

LD- G-; Tj=25°C 1- 10mA

IT(RMS) RMS on-state

current full sine wave; Tsp ≤112 °C;

see Figure 4; see Figure 1;

see Figure 2

--0.8A

dVD/dt rate of rise of

off-state voltage VDM =402V; T

j= 125 °C; gate

open circuit; see Figure 14 1000 - - V/µs

Product data sheet Rev. 5 — 13 July 2010 2 of 14

NXP Semiconductors ACT108W-600E

AC Thyristor power switch

2. Pinning information

3. Ordering information

VCL clamping voltage ICL = 100 µA; tp=1ms;

Tj≤125 °C; see Figure 17 650--V

VPP peak pulse

voltage Tj= 25 °C; non-repetitive,

off-state; see Figure 3 --2kV

VTon-state voltage IT= 1.1 A; see Figure 13 --1.3V

Table 1. Quick reference data …continued

Symbol Parameter Conditions Min Typ Max Unit

Table 2. Pinning info rmation

Pin Symbol Description Simplified outline Graphi c sy mbol

1 LD load

SOT223 (SC-73)

2CMcommon

3 G gate

4CMcommon 132

001aaj92

Table 3. Orderi ng information

Type number Package

Name Description Version

ACT108W-600E SC-73 plastic surface-mounted package with increased heatsink;

4 leads SOT223

Product data sheet Rev. 5 — 13 July 2010 3 of 14

NXP Semiconductors ACT108W-600E

AC Thyristor power switch

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maxi mum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state voltage - 600 V

IT(RMS) RMS on-state current full sine wave; Tsp ≤112 °C;

see Figure 4; see Figure 1; see Figure 2 -0.8A

ITSM non-repetitive peak on-state

current full sine wave; Tj(init) =25°C;

tp=16.7ms -8.8A

full sine wave; Tj(init) =25°C;

tp= 20 ms; see Figure 5; see Figure 6 -8A

I2tI

2t for fusing tp= 10 ms; sine-wave pulse - 0.32 A2s

dIT/dt rate of rise of on-state current IT=1A; I

G=20mA; dI

G/dt = 0.2 A/µs - 100 A/µs

IGM peak gate current t = 20 μs-1A

VGM peak gate voltage positive applied gate voltage - 15 V

PG(AV) average gate power over any 20 ms period - 0.1 W

Tstg storage temperature -40 150 °C

Tjjunction temperature - 125 °C

VPP peak pulse voltage Tj= 25 °C; non-repetit ive, o ff-st at e;

see Figure 3 -2kV

f = 50 Hz

Tsp = 112 °C

Fig 1. RMS on-state current as a function of surge

duration; maximum values Fig 2. RMS on-state current as a function of solder

point temperature; maximum values

003aac822

10−210−1110

surge duration (s)

IT(RMS)

(A)

003aac807

0.2

0.4

0.6

0.8

−50 0 50 100 150

Tsp

(°C)

IT(RMS)

(A)

Product data sheet Rev. 5 — 13 July 2010 4 of 14

NXP Semiconductors ACT108W-600E

AC Thyristor power switch

Fig 3. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5

α = conduction angle

Fig 4. Total power dissipation as a function of RMS on-state current; maximum values

003aad07

150 Ω5 μH

2 Ω

220 Ω

Surge Generator

Surge pulse

IEC 61000-4-5 Standards

RGen

Open Circuit Voltage

DUT

Load Model

1.2 μs/50 μs waveform

003aac803

0.2

0.4

0.6

0.8

1.0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

IT(RMS)

(A)

(W)

Ptot

α = 180°

Product data sheet Rev. 5 — 13 July 2010 5 of 14

NXP Semiconductors ACT108W-600E

AC Thyristor power switch

f = 50 Hz

Fig 5. Non-repetitive peak on-state current as a fun ction of the number of sinusoidal current cycles; maximum

values

tp ≤ 20 ms

Fig 6. Non-repetitive peak on-state current as a function of pulse width; maximum values

003aac804

11010

2103

number of cycles

ITSM

(A)

ITSM

Tj(init) = 25 °C max

1/f

003aac805

102

103

10−510−410−310−2

tp (s)

ITSM

(A)

ITSM

Tj(init) = 25 °C max

Product data sheet Rev. 5 — 13 July 2010 6 of 14

NXP Semiconductors ACT108W-600E

AC Thyristor power switch

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-sp) thermal resistance

from junction to solder

point

full cycle with heatsink compound;

see Figure 9 --15K/W

Rth(j-a) thermal resistance

from junction to

ambient

full cycle; printed-circuit board mounted

for pad area; see Figure 7 -70-K/W

full cycle; printed-circuit board mounted

for minimum footprint; see Figure 8 - 156 - K/W

All dimensions are in mm

Printed-circuit board:

FR4 epoxy glass (1.6 mm thick), copper laminate

(35 um thick), All dimensions are in mm

Fig 7. Printed-circuit board pad area SOT223 Fig 8. Minimum footprint SOT223

001aab5

4.6

4.5

50 001aab50

3.8 min

1.5

min

1.5

min

(3×)

2.3

4.6

6.3

1.5

min

Product data sheet Rev. 5 — 13 July 2010 7 of 14

NXP Semiconductors ACT108W-600E

AC Thyristor power switch

6. Characteristics

Fig 9. Transient thermal impedance from junction to solder point as a function of pulse width

003aac808

10−1

102

Zth(j-sp)

(K/W)

10−2

tp (s)

10−511010−1

10−2

10−410−3

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

IGT gate trigger current VD=12V; I

T= 1 00 mA; LD+ G-;

Tj=25°C; see Figure 10 1- 10mA

VD=12V; I

T= 100 mA; LD- G-;

Tj=25°C 1- 10mA

ILlatching current VD=12V; I

G=12mA; T

j=25°C;

see Figure 11 --30mA

IHholding current VD=12V; T

j=25°C; see Figure 12 -925mA

VTon-stat e vo ltage IT= 1.1 A; see Figure 13 --1.3V

VGT gate trigger voltage VD=12V; I

T=100mA; T

j≤125 °C 0.15 - - V

VD=12V; I

T=100mA; T

j=25°C --1V

IDoff-state current VD=600V; T

j≤125 °C - - 0.2 mA

VD=600V; T

j≤25 °C - - 2 µA

dVD/dt rate of rise of off-state

voltage VDM =402V; T

j= 125 °C; gate open

circuit; see Figur e 14 1000 - - V/µs

dIcom/dt rate of change of

commutating current VD=400V; T

j= 125 °C; IT(RMS) =1A;

dVcom/dt = 15 V/µs; gate open circuit;

see Figure 15 ; see Figure 16

0.3--A/ms

VCL clamping voltage ICL = 100 µA; tp=1ms; T

j≤125 °C;

see Figure 17 650 - - V

Product data sheet Rev. 5 — 13 July 2010 8 of 14

NXP Semiconductors ACT108W-600E

AC Thyristor power switch

(1) LD+ G-

(2) LD- G-

Fig 10. Normalized gate trigge r current as a function of

junction temperature Fig 11. Normalized latching current as a function of

junction temperature

VO = 0.758 V; RS = 0.263 Ω

(1)Tj = 125 °C; typical values

(2)Tj = 125 °C; maximum values

(3)Tj = 25 °C; maximum values

Fig 12. Normalized holding current as a function of

junction temperature Fig 13. On-state current as a function of on-state

voltage

IGT

IGT(25°C)

Tj (°C)

−50 0 150

100

003aac809

(1)

(2)

(1)

(2)

Tj (°C)

−50 150100050

003aac811

IL(25°C)

Tj (°C)

−50 150100050

003aac810

IH(25°C)

003aac812

0.0

0.5

1.0

1.5

2.0

0.0 0.5 1.0 1.5 2.0

(V)

(A)

(1) (2) (3)

Product data sheet Rev. 5 — 13 July 2010 9 of 14

NXP Semiconductors ACT108W-600E

AC Thyristor power switch

A is dVD/dt at condition Tj °C

B is dVD/dt at condition Tj 125 °C A is dIcom/dt at condition Tj °C

B is dIcom/dt at condition Tj 125 °C

VD = 400 V

Fig 14. Normalized rate of rise of off-state voltage as a

function of junctio n temp erat u re Fig 15. Normalized critical rate of rise of commut a tin g

current as a function of junction temperature

A[B] is dIcom/dt at condition B, dVcom/dt

A[spec] is the specified data sheet value of dIcom/dt

turn-off time < 20 ms

Fig 16. Normalized critical rate of change of

commutating current as a fun ctio n o f cr itical

rate of change of commutating volta g e;

minimum values

Fig 17. Normalized clamping voltage (upper limit) as a

function of junction temp erat ure; minimum

values

Tj (°C)

25 12510050 75

003aac813

(°C)

25 12510050 75

003aac814

003aac815

0.5

1.0

1.5

2.0

10−111010

B (V/μs)

A [B]

A [spec]

Tj (°C)

−50 150100050

003aac817

0.4

0.8

1.2

VCL

VCL(25°C)

Product data sheet Rev. 5 — 13 July 2010 10 of 14

NXP Semiconductors ACT108W-600E

AC Thyristor power switch

7. Package outline

Fig 18. Package outline SOT223 (SC-73)

UNIT A1bpcDEe1HELpQywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.10

0.01

1.8

1.5

0.80

0.60

3.1

2.9

0.32

0.22

6.7

6.3

3.7

3.3 2.3

4.6 7.3

6.7

1.1

0.7

0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 04-11-10

06-03-16

detail X

vMA

0 2 4 mm

scale

132

lastic surface-mounted package with increased heatsink; 4 leads SOT22

Product data sheet Rev. 5 — 13 July 2010 11 of 14

NXP Semiconductors ACT108W-600E

AC Thyristor power switch

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

ACT108W-600E v.5 20100713 Product data sheet - ACT108W-600E v.4

Modifications: •Various changes to content.

ACT108W-600E v.4 20091209 Product data sheet - -

Product data sheet Rev. 5 — 13 July 2010 12 of 14

NXP Semiconductors ACT108W-600E

AC Thyristor power switch

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) desc r ibed in this doc ument may have ch anged since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information se e the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the shor t data sheet, the

full data sheet shall pre va il.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this d ocument is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incid ental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregat e and cumulative liabil ity towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors product s are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environme ntal

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

NXP Semiconductors does not accept any liability rela ted to any default,

damage, costs or problem which is based on a weakness or default in the

customer application /use or t he application/use of customer’s third party

customer(s) (hereinafter both referred to as “Application”). It is customer’s

sole responsibility to check whether the NXP Semiconductors product is

suitable and fit for the Appl ica tion plann ed. Customer has to do all necessary

testing for the Application in order to avoid a default of the Application and t he

product. NXP Semiconductors does not accept any liability in this respect.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in the

Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings onl y and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) de scribed herein may

be subject to export control regulations. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product developmen t.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary sp ecification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 5 — 13 July 2010 13 of 14

NXP Semiconductors ACT108W-600E

AC Thyristor power switch

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automo tive use. It i s neit her qualif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such au tomotive applications, use and specifications, and (b )

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive appl ications beyond NXP Semico nductors’

standard warrant y and NXP Semiconductors’ product specifications.

9.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

10. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors ACT108W-600E

AC Thyristor power switch

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 13 July 2010

Document identifier: ACT108W-600E

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

11. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .6

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .7

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .1 2

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

10 Contact information. . . . . . . . . . . . . . . . . . . . . .13