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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS9411_F085 N-Channel PowerTrench(R) MOSFET 40 V, 30 A, 7.8 m Features Typical RDS(on) = 6.3 m at VGS = 10V, ID = 30 A Typical Qg(tot) = 14.7 nC at VGS = 10V, ID = 30 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Electronic Steering For current package drawing, please refer to the Fairchild web site at https://www.fairchildsemi.com/packagedrawings/PQ/ PQFN08M.pdf Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings 40 Units V 20 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25C 30 Pulsed Drain Current TC = 25C See Figure 4 Single Pulse Avalanche Energy (Note 2) 20 A mJ Power Dissipation 68.2 W Derate Above 25oC 0.45 W/oC TJ, TSTG Operating and Storage Temperature RJC Thermal Resistance, Junction to Case RJA Maximum Thermal Resistance, Junction to Ambient -55 to + 175 oC 2.2 oC/W 50 oC/W (Note 3) Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25C, L = 70uH, IAS = 24A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. 3: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design, while RJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDMS9411 Device FDMS9411_F085 (c)2015 Fairchild Semiconductor Corporation FDMS9411_F085 Rev. 1.0 Package Power56 Reel Size 13" 1 Tape Width 12mm Quantity 3000units www.fairchildsemi.com FDMS9411_F085 N-Channel PowerTrench(R) MOSFET July 2015 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250A, VGS = 0V VDS = 40V, VGS = 0V 40 - - V - - 1 A TJ = 25oC TJ = 175oC (Note 4) - - 1 mA - - 100 nA 2.0 3.3 4.0 V - 6.3 7.8 m - 11.2 14 m VGS = 20V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250A ID = 30A, VGS= 10V TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V - 2.0 - nC Qgs Gate-to-Source Gate Charge - 5.6 - nC Qgd Gate-to-Drain "Miller" Charge - 2.7 - nC ns VDS = 20V, VGS = 0V, f = 1MHz VDD = 32V ID = 30A - 1100 - pF - 370 - pF - 23 - pF - 2.6 - - 14.7 22 nC Switching Characteristics ton Turn-On Time - - 16.4 td(on) Turn-On Delay - 9.3 - ns tr Rise Time - 3.3 - ns td(off) Turn-Off Delay - 15.1 - ns tf Fall Time - 4.0 - ns toff Turn-Off Time - - 24.8 ns V VDD = 20V, ID = 30A, VGS = 10V, RGEN = 6 Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD =30A, VGS = 0V - - 1.25 ISD = 15A, VGS = 0V - - 1.2 V IF = 30A, dISD/dt = 100A/s VDD = 32V - 36.7 48 ns - 20.6 27 nC Note: 4: The maximum value is specified by design at TJ = 175C. Product is not tested to this condition in production. (c)2015 Fairchild Semiconductor Corporation FDMS9411_F085 Rev. 1.0 2 www.fairchildsemi.com FDMS9411_F085 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted. 80 VGS = 10V 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) CURRENT LIMITED BY PACKAGE 60 40 20 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZJC 2 DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 TC = 25oC VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability (c)2015 Fairchild Semiconductor Corporation FDMS9411_F085 Rev. 1.0 3 www.fairchildsemi.com FDMS9411_F085 N-Channel PowerTrench(R) MOSFET Typical Characteristics 100 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 0.1 0.1 SINGLE PULSE TJ = MAX RATED TC = 25oC 1ms 10ms 100ms IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0 2 TJ = -55oC 3 4 5 6 7 VGS, GATE TO SOURCE VOLTAGE (V) 1 10 100 VGS = 0 V 10 TJ = 25 oC TJ = 175 oC 1 0.1 0.0 8 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 100 100 VGS 80 80s PULSE WIDTH Tj=25oC 60 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.1 100 TJ = 175oC 20 0.01 Figure 6. Unclamped Inductive Switching Capability 60 TJ = 25oC STARTING TJ = 150oC NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 VDD = 5V 40 STARTING TJ = 25oC tAV, TIME IN AVALANCHE (ms) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 80 10 1 0.001 1 10 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 40 20 VGS 80 80s PULSE WIDTH Tj=175oC 60 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 40 5V 20 5V 0 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 Figure 9. Saturation Characteristics (c)2015 Fairchild Semiconductor Corporation FDMS9411_F085 Rev. 1.0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDMS9411_F085 N-Channel PowerTrench(R) MOSFET Typical Characteristics ID = 30A 50 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) 60 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 40 30 20 TJ = 175oC 10 0 4 TJ = 25oC 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 1.4 1.2 1.0 0.8 ID = 30A VGS = 10V 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 1.10 ID = 5mA 1.05 1.0 0.9 1.00 0.8 0.95 0.7 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature VGS, GATE TO SOURCE VOLTAGE(V) Ciss 1000 Coss 100 f = 1MHz VGS = 0V 10 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs. Drain to Source Voltage (c)2015 Fairchild Semiconductor Corporation FDMS9411_F085 Rev. 1.0 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 10000 CAPACITANCE (pF) 1.6 Figure 12. Normalized RDSON vs. Junction Temperature VGS = VDS ID = 250A 1.1 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.8 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.2 2.0 10 ID = 30A VDD = 20V 8 VDD =16V 6 VDD = 24V 4 2 0 0 3 6 9 12 Qg, GATE CHARGE(nC) 15 Figure 16. Gate Charge vs. Gate to Source Voltage 5 www.fairchildsemi.com FDMS9411_F085 N-Channel PowerTrench(R) MOSFET Typical Characteristics AccuPowerTM AttitudeEngineTM Awinda(R) AX-CAP(R)* BitSiCTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficentMaxTM ESBCTM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FETBenchTM FPSTM F-PFSTM FRFET(R) Global Power ResourceSM GreenBridgeTM Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM Marking Small Speakers Sound Louder and BetterTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MicroPak2TM MillerDriveTM MotionMaxTM MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiTTM OPTOLOGIC(R) OPTOPLANAR(R) (R)* (R) tm Power Supply WebDesignerTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SignalWiseTM SmartMaxTM SMART STARTTM Solutions for Your SuccessTM SPM(R) STEALTHTM SuperFET(R) SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOS(R) SyncFETTM Sync-LockTM TinyBoost(R) TinyBuck(R) TinyCalcTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TranSiCTM TriFault DetectTM TRUECURRENT(R)* SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM VoltagePlusTM XSTM XsensTM TM *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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PQFN8 5X6 1.27P CASE: 483BJ ISSUE B A DETAIL "A" 5 8 B 5.10 3.91 8 EJECTOR PIN 5 0.92 1.42 CL (3.46) 4.67 3.75 6.91 1 4 CL KEEP OUT AREA 1.42 SIDE VIEW 1 TOP VIEW 4 0.61 1.27 3.81 LAND PATTERN RECOMMENDATION DETAIL "B" 0.10 C 1.00 MAX 0.35 0.15 8X 0.35 0.15 0.10 C C FRONT VIEW DETAIL "B" SCALE: 2:1 SEATING PLANE 0.35 0.15 3.81 (0.34) 0.64 1 0.10 0.05 4 (1.39) 0.30 (2X) 0.15 MAX (2X) 8 5 1.27 (0.54) BOTTOM VIEW (3.15) C A B C DETAIL "A" SCALE: 2:1 NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC REGISTRATION, MO-240. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. E) DRAWING FILE NAME: MKT-PQFN08MREVB ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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