Unit : mm
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
OUTLINE DIMENSIONS
Case : ITO-220
Darlington Transistor
A PNP
2SB1283
(TP7J10)
Absolute Maximum Ratings
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55`+150
Junction Temperature Tj +150
Collector to Base Voltage VCBO -100 V
Collector to Emitter Voltage VCEO -100 V
Emitter to Base Voltage VEBO -7 V
Collector Current DC IC-7 A
Collector Current Peak ICP -10 A
Base Current DC IB-0.5 A
Base Current Peak IBP -1 A
Total Transistor Dissipation PTTc = 2530 W
Dielectric Strength Vdis Terminals to case AC 1 minute 2kV
Mounting Torque TOR (Recommended torque : 0.3N¥mj0.5 N¥m
Electrical Characteristics (Tc=25)
Item Symbol Conditions Ratings Unit
Collector Cutoff Current ICBO VCB = -100V Max -0.1 mA
ICEO VCE = -100V Max -0.1
Emitter Cutoff Current IEBO VEB = -7V Max -5 mA
DC Current Gain hFE VCE = -3V, IC = -3A Min 1,500
Max 15,000
Collector to Emitter Saturation Voltage VCE(sat) IC = -3A Max -1.5 V
Base to Emitter Saturation Voltage VBE(sat) IB = -5mA Max -2.0 V
Thermal Resistance Æjc Junction to case Max 4.16 /W
Transition Frequency fTVCE = 10V, IC = 0.7A TYP 20 MHz
Turn on Time ton Max 1
IC = -3A
Sto rag e T i me ts IB1 = IB2 = -5mA Max 4 Ês
RL = 10¶
Fall Time tf VBB2 = -4V Max 2
-3
-2.5
-2
-1.5
-1
-0.5
0
2SB1283
-0.0001 -0.001 -0.01 -0.1 -1
-3
-2.5
-2
-1.5
-1
-0.5
0
0.05 0.50.2 20 5052 200 500 2000 5000
0.02 0.05 0.50.2 20520.0050.002
IC =
−1A
−2A −3A −5A −7A −10A
Tc = 25°C
Saturation Voltage
IC =
−1A
−2A −3A −5A
−7A
−10A
Base Current IB [A]
Collector-Emitter Voltage VCE
[V]
Base-Emitter Voltage VBE
[V]
0.1
1
-7-6-5-4-3-2-10
2SB1283
IB1 = IC/600
IB2 = IC/600
VBB2 = −4V
VCC = −30V
Tc = 25°C
ts
ton
tf
Switching Time - IC
Collector Current IC [A]
Switching Time tSW [µs]
0.1
1
10
0 50 100 150
2SB1283
IC = −3A
IB1 = −5mA
IB2 = −5mA
VBB2 = −4V
RL = 10Ω
ts
ton
tf
Switching Time - Tc
Case Temperature Tc [°C]
Switching Time tSW [µs]
Transient Thermal Impedance
0.01
0.1
1
10
2SB1283
10-5 10-4 10-3 10-2 10-1 100101102
0.05 0.50.2 20 5052 200 500 2000 5000
0.02 0.05 0.50.2 20520.0050.002
Time t [s]
Transient Thermal Impedance θjc(t) [°C/W]
Forward Bias SOA
-0.01
-0.1
-1
-10
-1 -10 -100
2SB1283
Tc = 25°C
Single Pulse
150µs
1ms10ms
DC
Collector-Emitter Voltage VCE [V]
Collector Current IC [A]
PT limit
IS/B limit
0
20
40
60
80
100
050 100 150
2SB1283 Collector Current Derating
Collector Current Derating [%]
VCE = fixed
PT limit
IS/B limit
Case Temperature Tc [°C]
-15
-10
-5
0-140-120-100-80-60-40-200
2SB1283
IB1 = 0.005IC
IB2 = −70mA
VBB2 = −5V
Tc < 150°C
Reverse Bias SOA
Collector-Emitter Voltage VCE [V]
Collector Current IC [A]
0
5
10
15
20
25
30
35
0 50 100 150
2SB1283 Derating Curve
Ambient Temperature Ta [°C]
Allowable Transistor Dissipation PT [W]
200mm × 200mm × 2mm Al
Infinite heatsink
100 x 100 x 2
50 x 50 x 2
No heatsink
