| SAMSUNG SEMICONDUCTOR INC AWE D 2964 b42 0007728 6 i PNP EPITAX an TIP105/106/107 >. SILICON DARLINGTON TRANSISTOR T- 33-3/ . Ni - HIGH DC CURRENT GAIN MIN - hre=1000 @ Vce=4V, Ilc=-3A To-220 COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP100/101/102 ABSOLUTE MAXIMUM RATINGS (T, =25C) Characteristic Symbol. Rating Unit Collector-Base Voltage : TIP105 | Veso -eo [vv - . > TIP106 -80 Vv : TIP107- ~100 v 1, Base 2. Collector 3. Emitter ea Collector-Emitter Voltage: Veeo - - . 2 TIP105 -60 Mv " : TIP106 | - ~80 v : TIP107 100 Vv Emitter-Base Voltage ~ Veso - Vv Collector Current (DC) k -8 A Collector Current (Pulse) Ib -16 A Base Current (DC} fa -1 A Bo-+ Collector Dissipation (Ta=25C) | Pe 2 Ww Coltector Dissipation (Te=25C) | Pr 80 Ww Junction Temperature T. 160 C Storage Temperature Tstg 65~150 C R,=10Ka 7 - PeSo0sKna ELECTRICAL CHARACTERISTICS (T,=25C) - Characteristic Symbol! Test Condition Min Max Unit Collector Emitter Sustaining Voltage | Vceo(sus) : > TIP105 lo=-30mA, !a=O0 -60. Vv :TIP106 |. -80 v :TIP107 | . -100 v Collector Cutoff Current : TIP105 | ceo Vee=~3OV, Ip=0 -50 pA . :TiP106 | Vce 40V, la=O0 50 pA . . > TIP107 Vcem 50V, lp=O -60 pA Collector Cutoff Current : TIP105 lego Vca 6OV, IO -650 | | WA * : TIP106 Veas=~S80V, le=O . *-50 HA . : TIP107 Vea100V, le=0 -50 pA Emitter Cutoff Current leso Ver=6V, lomO ~2 mA DC Current Gain . hee . Vee 4V, b= -3A T000 | 20000 Vee=4V, k=-8A 200 Collector Emitter Saturation Voltage | Vce(sat) k= -3A, la=6mA . -2 Vv lk=-BA, lp=-B0MA 2.5 v Base Emitter On Voltage Vee(on) Vece=4V, ioe BA -2.8 Vv Output Capacitance .~ Cob Vea=10V, le=0, f=0.1MHz 300 pF cee SAMSUNG SEMICONDUCTOR : v 303SAMSUNG SEMICONDUCTOR INC TIP105/106/107 : 5 STATIC CHARACTERISTIC fofA), COLLECTOR CURRENT 1 -2 -3 $+. 35 Ves{, COLLECTOR-EMITTER VOLTAGE ' 0 S4 COLLECTOR-EMITTER SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE k= pi Vee(ent), Vea(eat) (Vj, SATURATION VOLTAGE 4 ~100 0.1 +02 -05 -t -2 .-5 -10 -20 -50 fefA), COLLECTOR CURRENT 100 POWER DERATING Po(W), FOWER DISSIPATION 2 $0 : _Tel*C), CASE TEMPERATURE 75 100 126 160 178 200 225 250 LYE DO PNP EPITAKn. a SILICON DARLINGTON TRANSISTOR kctmA}, COLLECTOR CURRENT 2964242 0007729 Tt IAL _ FEB3-3 1 DC CURRENT GAIN 10060 3 8 8 8 beg, DC CURRENT GAIN a oo 3 100 -0.1 -0.2 . -O5 ~t -2 -5 -10 i{A), COLLECTOR.CURRENT COLLECTOR OUTPUT CAPACITANCE i 10) MHz . exo. CulpF), CAPACITANCE . = _ ~ on 038388 388 8 2 t ~ 701-02 -05 ~1 -2 -5 -10 -20 Ves(), COLLECTOR-BASE VOLTAGE 7650 -100 SAFE OPERATING AREA 2 x 0.t . 70.08 0.02 -0.01 - 701-02 -05 -1 -2 Vex{V}, COLLECTOR-EMITTER VOLTAGE -5 -10 -20 -5O -i00 ce SAMSUNG SEMICONDUCTOR 304G SEMICONDUCTOR INC LYE OD 29b4L42 0007730 & SAMSUN NPNEPITAXIAL - ) i TIP110/114/112 _ SILICON DARLINGTON TRANSISTOR T- 33-29 HIGH DC CURRENT GAIN: MIN hre=1000 @ Vee =4V, Ic =1A. T0-220 LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER. SHUNT RESISTORS INDUSTRIAL: USE Complementary to T1P115/116/117 ABSOLUTE MAXIMUM RATINGS (T,=25C) Characteristic Symbol |. Rating Unit Collector-Base Voltage : TIP110 | Voao 60 Vv : TIP1414 . so fv :TIP112 | 100 Vv . ; Collector-Emitter Voltage Veeo 1. Base 2. Collector 3, Emitter . :TIP110 | | 60 Vv - : TIP111 80 Vv . :TIPV72 4 100 V Emitter-Base Voltage Veo 5 ve ; & Collector Current (DC) - k 2 A o Collector Current (Pulse) is 4 A . . Base Current (DC) Ib 50- mA B ote Collector Dissipation (T,=25C) | Po 2 Ww kK Collector Dissipation (Te=25C)-| Po 50 Ww . Junction Temperature Tj 150 C Storage Temperature Tstg -=65~150 C A,e10K A . Ra=oska AAA Ay . : Ri Ro d E ELECTRICAL CHARACTERISTICS (Ta =25C) - , Characteristic Symbol Test Condition Min Max Unit | Collector Emitter Sustaining Voltage | Veco(sus) . : : TIP110 Ic-=30MA, Ie=O - 60 v 2 TIP141. 80o Vv > TIP112 100 Vv Collector Cutoff Current : TIP110 leo Vce=30V, Is=O0 . 2 mA > TIPI11 Vce=40V, Ig=O 2 mA : TIP112 . Vce=50V, lg=O _ 2 . mA Collector Cutoff Current : : TIP110 keeo - Vea=60V, le=O 1 | mA :TIP4 11 ~ , Vea=80V, =O q mA 7-TIP112 Vea=100V, fe=0 1 mA Emitter Cutoff Current lesa Vee=5V, =O 2 mA DC Current Gain ee Vce=4V, b=1A 1000 ; - Vee=4V, =2A. 500 Collector Emitter Saturation Voltage Voe(sat) Ic=2A, le=8mA 2.5 Vv Base Emitter On Vottage Vee(on) Vce=4V, c= 2A | 28 Vv. Output Capacitance. : Cob Vea=10V, =0, f=0, {MHz 100 pF cs SAMSUNG SEMICONDUCTOR 906-- Fe Lue o Pp) zac4uaue ooo7731 38 ff TIP110/111/112 SAMSUNG SEMICONDUCTOR INC | . STATIC CHARASTERISTIC Ie{A), COLLECTOR CURRENT 1 2 3 4 Vce(), COLLECTOR-EMITTER VOLTAGE 5 COLLECTOR-EMITTER SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE 100 Os Vee(eat), Vcs(sal) (V}, SATURATION VOLTAGE o2 ot 0.01 0.02 005 01 02 O05 1 2 ie(A), COLLECTOR CURRENT POWER DERATING Po{W), POWER DISSIPATION 25 50 7 100 126 150 175 Tc{*C}, CASE TEMPERATURE 200 NPN EPITAXIAL SILICON. DARLINGTON TRANSIST OR T-33-29 ~ OC CURRENT GAIN 8 3. 8 8 & bea, DC CURRENT GAIN 8 20 10 0.01 0.02 0.05 01 062 O8 ft, fe{A}, COLLECTOR CURRENT 2 5 10 COLLECTOR OUTPUT CAPACITANCE 8 =z 5 < 3 0.010.020.050.10.2 05 1 2 5 10 20 50 100 , Vest), COLLECTOR-BASE VOLTAGE SAFE OPERATING AREA E Zz 7 pp 4 6 4 Q 8 ~ a < 3 i 1 1 10 20 60 . 100 ved COLLECTOREMITTER VOLTAGE C58 samsuna SEMICONDUCTOR 306hue O ff eae4z42 o007732 T Bone EPITAXIAL . TIP115/116/117 SILICON DARLINGTON TRANSISTOR SAMSUNG SEMICONDUCTOR . INC HIGH DC CURRENT GAIN oe MIN-hre=1000 @ Vce=4V, Ilc=~1A 10.220 LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP110/111/112 _ T ~ Ft~ Fy ABSOLUTE MAXIMUM RATINGS (T, =25C) Characteristic Symbol Rating Unit Collector Base Voltage: TIP115 | Vso -60 Vv : TIP116 ~8b Fev 2 TIP117 ~100 V 1, Base 2, Collector 3. Emitter . Collector Emitter Vottage Vceo . - : TIP 115 . =60 Vv > TIP116 - . ~=80 v - : TIP117 -100 Vv Emitter-Base Voltage - | Veso 5 v c ' Collector Current (DC) Ib -2 A an Collector Current (Pulse) Ie -4 A / 7 Base Current (DC) la _ 750 mA B ake Collector Dissipation (T4=25C) | Po 2 W : mT Collector Dissipation (Tc=25C) | Pe ~ 50 Ww Junction Temperature Tj 150 C Storage Temperature Tstg 66~150 C R,=1OK 2-. Ro* 0.6K 0 Lae 4A Ri Re 4 . E ELECTRICAL CHARACTERISTICS (T,=25C). Characteristic Symbol Test Condition Min Max Unit Collector Emitter Sustalning Voltage | Vceo{sus) - : TIP115 Ic=30mA, lnp=O . -60 - Vv : TIP116 ~80 |" Vv : TIP117 ~100 Mv Collector Cutoff Current : TiP115 kero Vce=30V, lp=O -2 mA : TIP116 Vce=40V, lp=0 -2 mA : TIP117 . Vee=50V, lp=O -2 mA Collector Cutoff Current : TIP115 {| leso Vca=60V, f=0 -1 mA : TIP118 Vea=-80V, le=0 -1 mA . : TIP117 Vee*100V, k=O ~1 mA Emitter Cutoff Current leno Vee= 5V, lo=0 | =2 mA DG Current Gain : Dre Voe=4V, lo=-1A 1000 Voe=4V, b= -2A 500 Collector Emitter Saturation Voltage | Vce(sat) - | b=2A, lp=8mA 2.5 Vv Base Emitter On Voltage - Vee(on) Vee=4V, lo=-2A -2.8 Vv Output Capacitance Cob Vca=10V, le=0, f=0.1MHz 200 pF . cb SAMSUNG SEMICONDUCTOR . 3077!SAMSUNG SEMICONOUCTOR.INC 14 0 WM 7aeun4a 0007733 1 i PNP EPTT L - TIP115/116/117 . . SILICON DARLINGTON TRANSISTOR % T33-3| STATIC CHARACTERISTIC OC CURRENT GAIN = 3 1000 > o = 5 5 gy S00 & & 4 3 200 8 8 a gy 100 . $ = 50 20 10 1 -2 -3 ~4 Soa *0.01 -0.02 ~0.05~0,1 -0.2 -0.8 = -2 5- -10 Ves(V, COLLECTOR-EMITTER VOLTAGE b{A), COLLECTOR CUARENT COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE BASE-EMITTER SATURATION VOLTAGE i000 wr 500 SC < . 3-20 200 > - 3-10 8 100 E 2 < & -5 so E = a a 72 ag 2 i a 3 10 3: e708 5 - 3 2 ~0.2 2 -0.1 1 0.01 -0.02 -0.08 -0.1~0.2 ~06 -1 -2 - -10 0.01-0.02 | -0.1-0.2-0.5 -1-2 -5 ~10 ~20-s0 ~100 {A}, GOLLEGTOR CURRENT COLLECTORBASE VOLTAGE POWER DERATING . SAFE OPERATING AREA i Po{W), POWER DISSIPATION 1 2 a fe(A), COLLECTOR CURRENT 1 t 2 3 t ~O1 25 50 76 f00 125 #4150 175 200 -1 -2 5. 10 +20 -0 -100 Te(*C}), CASE TEMPERATURE. Veet), COLLECTOR EMITTER YOLTAGE GEE samsunc SEMICONDUCTOR 308