7079235004 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor CASE TO-92A designed for small signal high frequency amplifiers and oscillators. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 30V Collector-Emitter Voltage VCEO 15V Emitter-Base Voltage VEBO 2Vv Collector Current Ic 50mA Total Power Dissipation @ TAa=25C Prot 625mW @ Tc=25C dw Operating Junction & Storage Tmperature Tj, Tstg -55 to +150C ELECTRICAL CHARACTERISTICS AT (TA=25C unless otherwise noted) PARAMETER SYMBOL | MIN MAX | UNIT | TEST CONDITIONS _ Collector-Base Breakdown Voltage |BVCBO 30: Vv Ic=100pA Ie=0 | Collector-Emitter Breakdown VoltageBVCEO 15 Vv Ic=3mA IB=0 | Emitter-Base Breakdown Voltage BVE BO 3 V Ie=1L0nA Ic=0 | Collector Cutoff Current ICBO 10 | nA VcB=15V TE=0 1] pA VCB=15V Ta=150C Collector-Emitter Saturation VCE (SAT) 0.4; ~V Ic=10mA Ipz=imA Voltage Base-Emitter Saturation Voltage VBE(SAT) 1] V Ic=1l0mA IB=lmA Current Gain-Bandwidth Product fT 800 typ. | MHz | IC=8mA VCE=10V Output Capacitance Cob 1.7] pF VCB=10V IE=0 Input Capacitance Cib 2| pF VEB=0.5V Ic=0 plNoise Figure NF 6| dB | IcslmA ~VCE=6V RG=4002 f=60MHz 38 HUNG TO ROAD, KWUN TONG, HONG KONG. TELEX 3510 | MICRO ELECTRONICS LTD. KWON ToNe P. 9, BoXpsa77 CABLE ADDRESS _MICROTRON = | FAX: 3-699321. oe et. = ll