Data Sheet 1 2001-01-01
GaAs FET CFY 30
Data Sheet
Low noise (Fmin = 1.4 dB @ 4 GHz)
High gain (11.5 dB typ. @ 4 GHz)
For oscillators up to 12 GHz
For amplifiers up to 6 GHz
Ion implanted planar structure
Chip all gold metallization
Chip nitride passivation
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type Marking Ordering Code
(tape and reel)
Pin Configuration Package1)
1) Dimensions see Page 8.
1234
CFY 30 A2 Q62703-F97 S D S G P-SOT143-4-1
Maximum Ratings
Parameter Symbol Value Unit
Drain-source voltage VDS 5V
Drain-gate voltage VDG 7V
Gate-source voltage VGS – 4 … + 0.5 V
Drain current ID80 mA
Channel temperature TCh 150 °C
Storage temperature range Tstg – 40 … + 150 °C
Total power dissipat. (TS 48 °C)1)
1) TS is measured on the source 1 lead at the soldering point to the PCB.
Ptot 250 mW
Thermal Resistance
Parameter Symbol Value Unit
Channel-soldering point1)
1) TS is measured on the source 1 lead at the soldering point to the PCB.
RthChS < 320 K/W
SOT-143
GaAs Components
CFY 30
Data Sheet 2 2001-01-01
Electrical Characteristics
TA = 25 °C, unless otherwise specified
Characteristics Symbol Limit Values Unit Test
Conditions
min. typ. max.
Drain-source saturation
current
IDSS 20 50 80 mA VDS = 3.5 V
VGS = 0 V
Pinch-off voltage VGS(P) 0.5 1.3 4.0 V VDS = 3.5 V
ID = 1 mA
Transconductance gm20 30 mS VDS = 3.5 V
ID = 15 mA
Gate leakage current IG0.1 2 µAVDS = 3.5 V
ID = 15 mA
Noise figure
f = 4 GHz
f = 6 GHz
NF
1.4
2.0
1.6
dB VDS = 3.5 V
ID = 15 mA
Associated gain
f = 4 GHz
f = 6 GHz
GA
10
11.5
8.9
dB VDS = 3.5 V
ID = 15 mA
Maximum available gain MAG 11.2 dB VDS = 3.5 V
ID = 15 mA
f = 6 GHz
Maximum stable gain MSG 14.4 dB VDS = 3.5 V
ID = 15 mA
f = 4 GHz
Power output at 1 dB
compression
P 1 dB 16 dBm VDS = 4 V
ID = 30 mA
f = 6 GHz
GaAs Components
CFY 30
Data Sheet 3 2001-01-01
Typical Common Source Noise Parameters
ID = 15 mA, VDS = 3 V, Z0 = 50
fFmin GAΓopt RNNF
50 G(F50 )
GHz dB dB MAG ANG –dBdB
2 1.0 15.5 0.72 27 49 0.17 2.9 10.0
4 1.4 11.5 0.64 61 29 0.17 2.7 9.3
6 2.0 8.9 0.46 101 19 0.30 2.8 7.5
8 2.5 7.1 0.31 153 9 0.31 2.8 6.4
10 3.0 5.8 0.34 133 14 0.38 3.4 4.2
12 3.5 5.0 0.41 93 28 0.42 4.1 2.9
Data Sheet 4 2001-01-01
GaAs Components
CFY 30
Total Power Dissipation
Ptot = f (TS; TA)
0
EHT08533
0
A
T
P
tot
50 100 150˚C
T
S
;
T
A
T
S
20
40
60
80
100
120
140
160
180
200
mW
Output Characteristics
ID = f (VDS)
0
EHT08534
0
DS
V
D
I
= 0 V
V
GS
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1 V
1 2 34V 5
10
20
30
40
mA
50
-1.2 V
-1.4 V
GaAs Components
CFY 30
Data Sheet 5 2001-01-01
Typical Common Source S-Parameters
ID = 15 mA, VD = 3.5 V, Z0 = 50
fS11 S21 S12 S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
0.1 1.00 1 2.43 178 0.003 87 0.70 1
0.4 1.00 6 2.43 171 0.010 23 0.69 5
0.8 0.99 14 2.43 162 0.020 78 0.68 11
1.2 0.98 21 2.43 154 0.030 72 0.67 15
1.6 0.97 28 2.44 145 0.040 66 0.66 20
2.0 0.96 36 2.45 137 0.050 60 0.65 26
2.4 0.93 44 2.47 129 0.058 55 0.64 30
2.8 0.90 53 2.49 120 0.066 50 0.62 35
3.2 0.87 62 2.50 111 0.074 45 0.60 41
3.6 0.83 72 2.50 102 0.082 39 0.57 47
4.0 0.80 82 2.50 93 0.090 32 0.54 54
4.4 0.77 92 2.51 83 0.097 25 0.50 61
4.8 0.74 104 2.49 73 0.103 18 0.46 67
5.2 0.70 115 2.45 64 0.108 12 0.43 73
5.6 0.66 127 2.41 54 0.112 6 0.40 80
6.0 0.63 139 2.36 45 0.114 0 0.36 88
6.4 0.60 150 2.30 37 0.115 6 0.31 98
6.8 0.57 162 2.24 27 0.116 11 0.27 110
7.2 0.55 174 2.19 17 0.116 17 0.24 122
7.6 0.54 172 2.14 8 0.116 22 0.21 137
8.0 0.53 160 2.08 2 0.115 27 0.19 154
8.4 0.54 147 2.00 11 0.113 32 0.18 173
8.8 0.55 135 1.92 21 0.111 37 0.18 171
9.2 0.56 124 1.83 30 0.109 42 0.19 155
9.6 0.57 114 1.72 40 0.107 46 0.21 141
10.0 0.58 106 1.61 48 0.104 50 0.23 128
GaAs Components
CFY 30
Data Sheet 6 2001-01-01
10.4 0.59 98 1.51 56 0.102 53 0.26 118
10.8 0.60 91 1.42 62 0.101 56 0.29 108
11.2 0.61 85 1.35 69 0.099 58 0.32 100
11.6 0.62 79 1.30 75 0.098 60 0.34 93
12.0 0.62 74 1.25 81 0.096 63 0.36 85
Typical Common Source S-Parameters
ID = 30 mA, VD = 3.5 V, Z0 = 50
fS11 S21 S12 S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
0.1 1.00 2 3.23 178 0.002 85 0.71 1
0.4 1.00 8 3.21 171 0.009 79 0.70 6
0.8 0.99 16 3.19 162 0.017 73 0.69 11
1.2 0.97 24 3.18 153 0.025 70 0.67 16
1.6 0.95 32 3.17 143 0.034 65 0.66 21
2.0 0.92 40 3.17 135 0.042 61 0.65 26
2.4 0.90 48 3.17 127 0.051 56 0.63 31
2.8 0.87 58 3.17 119 0.059 50 0.61 36
3.2 0.83 68 3.16 109 0.067 45 0.58 42
3.6 0.79 79 3.12 99 0.073 40 0.55 48
4.0 0.75 91 3.08 88 0.079 34 0.52 54
4.4 0.71 102 3.04 78 0.084 28 0.50 60
4.8 0.67 114 3.00 68 0.089 21 0.47 66
5.2 0.63 126 2.95 58 0.092 15 0.43 73
5.6 0.60 138 2.87 49 0.094 10 0.38 81
6.0 0.57 150 2.77 40 0.096 4 0.34 89
Typical Common Source S-Parameters (contd)
ID = 15 mA, VD = 3.5 V, Z0 = 50
fS11 S21 S12 S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
GaAs Components
CFY 30
Data Sheet 7 2001-01-01
6.4 0.54 162 2.68 31 0.097 1 0.30 99
6.8 0.52 174 2.58 22 0.098 6 0.27 109
7.2 0.51 173 2.50 14 0.099 11 0.24 121
7.6 0.50 160 2.43 5 0.099 16 0.21 134
8.0 0.50 147 2.36 4 0.099 20 0.18 148
8.4 0.51 135 2.26 13 0.099 24 0.16 164
8.8 0.52 125 2.15 22 0.099 29 0.16 176
9.2 0.54 115 2.04 30 0.099 33 0.17 158
9.6 0.55 107 1.93 39 0.099 37 0.19 142
10.0 0.57 99 1.82 47 0.099 41 0.22 128
10.4 0.59 91 1.71 54 0.100 44 0.25 118
10.8 0.60 85 1.60 62 0.101 47 0.27 109
11.2 0.61 79 1.51 69 0.102 49 0.30 100
11.6 0.62 73 1.44 75 0.103 52 0.32 92
12.0 0.62 68 1.38 82 0.104 55 0.34 85
Typical Common Source S-Parameters (contd)
ID = 30 mA, VD = 3.5 V, Z0 = 50
fS11 S21 S12 S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
GaAs Components
CFY 30
Data Sheet 8 2001-01-01
Package Outlines
1.9
1.7
0.4
-0.05
+0.1
+0.1
-0.05
0.8
B
A
0.25
M
B
2.9
±0.1
acc. to
+0.2
DIN 6784
1.1 max
2˚... 30˚
2.6 max
10˚ max
10˚ max
0.1 max
1.3
±0.1
0.08...0.15
A
M
0.20
±0.2
0.7
0.55
-0.1
±0.1
0.3
43
21
P-SOT143-4-1
(Small Outline Transistor)
GPS05559
Sorts of Packing
Package outlines for tubes, trays etc. are contained in
our Data Book Package Information.
Dimensions in mm
SMD = Surface Mounted Device