October 1992
GENERAL PURPOSE LINEAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 2LFL (S011)
hermet ica lly se aled
.EMITTER BALLASTED
.CLASS A LINEAR OPERATION
.COMMON EMITTER
.VSWR CAPABILITY 15:1 @ RATED
CONDITIONS
.ft 3.2 GHz TYPICAL
.NOISE FIGURE 12.5 dB @ 2 GHz
.POUT = 30.0 dBm MIN.
DESCRIPTION
The MSC80196 is a hermetically sealed NPN
power transistor featuring a unique matrix structure.
This device is specifically designed for Class A
linear applications to provide high gain and high
output power at the 1.0 dB compression point.
PIN CO NNECTION
BRANDING
80196
OR DER COD E
MSC80196
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
PDISS Power Dissipation (see Safe Area) — W
ICDevice Bias Current 50 0 mA
VCE Collector-Emitter Bias Voltage* 20 V
TJJunction Temperature 20 0 °C
TSTG Storage Temperature − 65 to +200 °C
RTH(j-c) Junction-Case Thermal Resistance* 17 °C/W
*Applies only to rated RF am plifier operation
MSC80196
1. Collector 3. Base
2. Emitter 4. Emitter
THERMAL DATA
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ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
Symb ol Test C ond iti ons Value Unit
Min. Typ. Max.
GP*f = 2.0 GHz POUT = 30.0 dBm 7.0 9.0 — dB
∆GP*f = 2.0 GHz POUT = 30.0 dBm ∆POUT = 10 dB — — 1 dB
COB f = 1 MHz VCB = 28 V — — 5.0 pF
* Note: VCE = 18V
IC = 220mA
STATIC
Symbol Test Co nditions Value Unit
Min. Typ. Max.
BVCBO IC = 1mA IE = 0mA 50 — — V
BVEBO IE = 1mA IC = 0mA 3.5 — — V
BVCEO IC = 5mA IB = 0mA 20 — — V
ICEO VCE = 18V — — 1.0 mA
hFE VCE = 5V IC = mA 15 — 120 —
DYNAMIC
MSC80196
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TYPICAL PERFORMANCE
TYPICAL POWER OUTPUT & GAIN @ 1dB
COMPRESSION POINT vs FREQUENCY
TYPICAL POWER OUTPUT & GAIN @
1dB COMPRESSION POINT vs
COLLECTOR CURRENT
MAXIMUM OPERATING AREA FOR
FORWARD BIAS OPERATION
TYPICAL LINEAR GAIN vs
COLLECTOR CURRENT
MSC80196
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VCE = 18 V
IC = 220 mA
Zg = 50 ohms
TYPICAL S−PARAMETERS
MSC80196
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PACKAGE MECHANICAL DATA
Frequency 2.0 GHz
All dimensions are in inches.
Ref.: Dwg. No. C127305
TEST CIRCUIT
MSC80196
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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MSC80196
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