MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE - 4th generation Fast switching IGBT module - CM100DUS-12F Collector current IC ............................... 100A Collector-emitter voltage VCES .............. 600V Maximum junction temperature T jmax ... 1 5 0 C Flat base Type Copper base plate RoHS Directive compliant UL Recognized under UL1557, File E323585 Dual (Half-Bridge) APPLICATION High frequency (30 kHz ~ 60 kHz) switching use: Induction heating, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm E2 G2 INTERNAL CONNECTION Tolerance otherwise specified 0.5 to 3 Tolerance RTC 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1.2 C2E1 Di1 Tr2 E2 C1 Tr1 Di2 RTC G1 E1 Division of Dimension 1 February-2011 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25 C, unless otherwise specified) Rating Unit VCES Symbol Collector-emitter voltage G-E short-circuited 600 V VGES Gate-emitter voltage C-E short-circuited 20 V IC Item Conditions TC=25 C Collector current ICRM Ptot IE (Note.1) IERM (Note.1) 100 Pulse, Repetitive TC=25 C Total power dissipation Ptot' (Note.2) TC'=25 C (Note.4) A 200 (Note.2, 5) 350 (Note.3, 5) W 445 (Note.2) Emitter current (Free wheeling diode forward current) TC=25 C 100 Tj Junction temperature - -40 ~ +150 Tstg Storage temperature - -40 ~ +125 Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min Pulse, Repetitive (Note.4) A 200 2500 C V ELECTRICAL CHARACTERISTICS (T j =25 C, unless otherwise specified) Symbol Item Limits Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 20 A VGE(th) Gate-emitter threshold voltage IC=10 mA, VCE=10 V 5 6 7 V T j =25 C 1.7 2.0 2.7 T j =125 C - 1.95 - - - 27 - - 1.8 - - 1.0 - 620 - - - 100 VCEsat Collector-emitter saturation voltage Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Gate charge td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf IC=100 A VCE=10 V, G-E short-circuited VCC=300 V, IC=100 A, VGE=15 V VCC=300 V, IC=100 A, VGE=15 V, RG=6.3 , Inductive load 150 ns - 2.6 V VCC=300 V, IE=100 A, VGE=15 V, - - 150 ns Reverse recovery charge RG=6.3 , Inductive load - 1.9 - C Turn-on switching energy per pulse VCC=300 V, IC=IE=100 A, - 1.55 - trr (Note.1) Reverse recovery time Qrr (Note.1) rg 80 300 nC 2.0 IE=100 A (Note.1) - nF - Emitter-collector voltage Err - V - Fall time (Note.1) Eoff , VGE=15 V VEC Eon (Note.6) (Note.6) , G-E short-circuited Turn-off switching energy per pulse VGE=15 V, RG=6.3 , T j =125 C, - 2.2 - Reverse recovery energy per pulse Inductive load - 1.2 - Internal gate resistance Per switch - 0 - mJ THERMAL RESISTANCE CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)D Rth(c-s) Rth(j-c')Q Rth(j-c')D Item Thermal resistance (Note.2) Contact thermal resistance Thermal resistance Limits Conditions (Note.2) (Note.3) Min. Typ. Max. Unit Junction to case, per IGBT - - 0.35 K/W Junction to case, per FWDi Case to heat sink, per 1/2 module, (Note.7) Thermal grease applied Junction to case, per IGBT - - 0.70 K/W - 0.07 - K/W - - 0.28 K/W Junction to case, per FWDi - - 0.40 K/W MECHANICAL CHARACTERISTICS Symbol Mt Ms m ec Item Mounting torque Weight Flatness of base plate Limits Conditions Min. Typ. Max. Unit Main terminals M 5 screw 2.5 3.0 3.5 Mounting to heat sink M 6 screw 3.5 4.0 4.5 - 310 - g -100 - +100 m On the centerline X, Y 2 (Note.8) N*m February-2011 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE RECOMMENDED OPERATING CONDITIONS (T a =25 C) Symbol Item Conditions Limits Min. Typ. Max. VCC (DC) Supply voltage Applied across C1-E2 - 300 400 VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 13.5 15.0 16.5 RG External gate resistance Per switch 6.3 - 63 Unit V -: Concave +: Convex Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). Note.2: Case temperature (TC) measured point is base plate side. (Refer to the figure of chip location) Note.3: Case temperature (TC') and heat sink temperature (T s ') are defined on the each surface of base plate and heat sink just under the chips. (Refer to the figure of chip location) The heat sink thermal resistance {R t h ( s - a ) } should measure just under the chips. Note.4: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. Note.5: Junction temperature (T j ) should not increase beyond T j m a x rating. Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of test circuit) Note.7: Typical value is measured by using thermally conductive grease of =0.9 W/(m*K). Note.8: Base plate flatness measurement points are as in the following figure. 3 mm X 3 mm Y Bottom 3 mm Bottom -: Concave Bottom +: Convex CHIP LOCATION (Top view) Dimension in mm, tolerance: 1 mm Case Temperature (T C ) measured point (Base plate side) Tr1/Tr2: IGBT, Di1/Di2: FWDi 3 February-2011 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS C1 C1 VGE=15 V G1 V V Es1 V C2E1 C2E1 G1 IE G1 Es1 VGE=15 V Shortcircuited Shortcircuited Shortcircuited G1 IC C1 C1 Shortcircuited G2 C2E1 Shortcircuited C2E1 Shortcircuited IC V Es1 Es1 IE G2 G2 G2 E2 Es2 Es2 Tr1 Tr2 E2 Di1 Di2 V C E s a t test circuit VEC test circuit vGE iE 90 % 0V iE 0 Q r r =0.5xI r r xt r r t Load trr IE + VCC iC 0A -V GE E2 Es2 Es2 E2 t 90 % +V GE RG vGE 0V Irr vCE iC -V GE 10% 0A tf tr t d (o n ) t d( o ff) t t r r , Q r r test waveform Switching characteristics test circuit and waveforms iE vCE 0 iC ICM iC VCC 0.1xICM 0.1xVCC 0.5xI r r ICM VCC t 0 0.1xVCC IEM vEC vCE 0.1xICM ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy t VCC 0A t 0V t ti FWDi Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) 4 February-2011 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) T j =25 C VGE=15 V 13 V 11 V 10 V 9.5 V 200 3 VGE=20 V 9 V 180 8.5 15 V 2.5 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (A) 160 140 120 8 V 100 80 7.5 60 40 7 V T j =125 C 2 1.5 T j =25 C 1 0.5 20 0 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 0 50 VCE (V) 100 150 COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 IC (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) T j =25 C G-E short-circuited , T j =25 C 5 1000 4 3.5 3 IC=100 A IE (A) IC=200 A IC=40 A EMITTER CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 4.5 2.5 2 1.5 100 10 1 0.5 0 1 6 8 10 12 14 GATE-EMITTER VOLTAGE 16 18 20 0 VGE (V) 0.5 1 1.5 2 2.5 3 EMITTER-COLLECTOR VOLTAGE 5 3.5 4 VEC (V) February-2011 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=300 V, VGE=15 V, RG=6.3 , T j =125 C, INDUCTIVE LOAD FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC=300 V, VGE=15 V, RG=6.3 , T j =125 C, INDUCTIVE LOAD 100 1000 td(off) 100 t r r (ns), I r r (A) SWITCHING TIME (ns) trr tf td(on) Irr 10 tr 1 10 1 10 COLLECTOR CURRENT 1 100 IC (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=300 V, VGE=15 V, RG=6.3 , T j =125 C, INDUCTIVE LOAD, PER PULSE 100 IE (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=300 V, IC/IE=100 A, VGE=15 V, T j =125 C, INDUCTIVE LOAD, PER PULSE 10 100 SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) 10 EMITTER CURRENT 1 Eon Eoff Eon 10 Eoff 1 Err Err 0.1 0.1 1 10 100 1 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) 10 EXTERNAL GATE RESISTANCE 6 100 RG () February-2011 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) G-E short-circuited, T j =25 C IC=100 A, T j =25 C 20 100 18 VGE (V) GATE-EMITTER VOLTAGE 10 1 Coes VCC=200 V 16 14 VCC=300 V 12 10 8 6 4 2 Cres 0.1 0 1 10 COLLECTOR-EMITTER VOLTAGE 0 100 VCE (V) 100 200 300 400 500 GATE CHARGE 600 700 800 900 QG (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) Single pulse, TC'=25C 1 Zth(j-c') 0.1 NORMALIZED TRANSIENT THERMAL IMPEDANCE CAPACITANCE (nF) Cies 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 R t h ( j - c ' ) Q =0.28 K/W, R t h ( j - c ' ) D =0.40 K/W TIME (S) 7 February-2011 MITSUBISHI IGBT MODULES CM100DUS-12F HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! *Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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