IMAGE SENSOR
CCD area image sensor
Front-illuminated FFT-CCDs, high IR sensitivity
S9978
S9978 is FFT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. S9978 also features low noise
and low dark current (MPP mode operation). These enable low-light-level detection and long integration time, thus achieving a wide dynamic
range.
S9978 is pin compatible with S9736-01. (Operating conditions and characteristics are a little bit changed from S9736-01.)
Features
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High IR sensitivity
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512 (H) × 512 (V) pixel format
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Pixel size: 24 × 24 µm
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100 % fill factor
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Wide dynamic range
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Low dark current
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Low readout noise
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MPP operation
Applications
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Astronomy
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Scientific measuring instrument
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Fluorescence spectrometer
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Raman spectrophotometer
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Optical and spectrophotometric analyzer
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For low-light-level detection requiring
■ General ratings
Parameter Rating
CCD structure Full frame transfer
Fill factor 100 %
Number of active pixels 512 (H) × 512 (V)
Pixel size 24 (H) × 24 (V) µm
Active area 12.288 (H) × 12.288 (V) mm
Vertical clock phase 2 phase
Horizontal clock phase 2 phase
Output circuit One-stage MOSFET source follower
Package 24-pin ceramic DIP
Window None
1
■ Spectral response (without window)
60
0
10
20
30
40
50
400 500 600 700 800 900 1000 1100
WAVELENGTH (nm)
1200
QUANTUM EFFICIENCY (%)
(Typ. Ta=25 ˚C)
S9978
CONVENTIONAL TYPE
S9736-01
KMPDB0253EB
CCD area image sensor
S9978
■ Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Operating temperature Topr -50 - +30 °C
Storage temperature Tstg -50 -+70 °C
OD voltage VOD -0.5 - +25 V
RD voltage VRD -0.5 -+18 V
ISV voltage VISV -0.5 - +18 V
ISH voltage VISH -0.5 -+18 V
IGV voltage VIG1V, VIG2V -15 - +15 V
IGH voltage VIG1H, VIG2H -15 -+15 V
SG voltage VSG -15 - +15 V
OG voltage VOG -15 -+15 V
RG voltage VRG -15 - +15 V
TG voltage VTG -15 -+15 V
Vertical clock voltage VP1V, VP2V -15 - +15 V
Horizontal clock voltage VP1H, VP2H -15 -+15 V
■ Operating conditions (MPP mode, Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Output transistor drain voltage VOD 18 20 22 V
Reset drain voltage VRD 12 13 14 V
Output gate voltage VOG -0.5 0 2 V
Substrate voltage VSS - 0 - V
Test point (vertical input source) VISV -V
RD -V
Test point (horizontal input source) VISH - VRD - V
Test point (vertical input gate) VIG1V, VIG2V -8 0 - V
Test point (horizontal input gate) VIG1H, VIG2H -8 0 - V
High VP1VH, VP2VH 046
Vertical shift register
clock voltage Low VP1VL, VP2VL -9 -8 -7 V
High VP1HH, VP2HH 046
Horizontal shift register
clock voltage Low VP1HL, VP2HL -9 -8 -7 V
High VSGH 046
Summing gate voltage Low VSGL -9 -8 -7 V
High VRGH 046
Reset gate voltage Low VRGL -9 -8 -7 V
High VTGH 046
Transfer gate voltage Low VTGL -9 -8 -7 V
■ Electrical characteristics (Ta=25 °C)
Parameter Symbol Remark Min. Typ. Max. Unit
Signal output frequency fc - - 0.1 1 MHz
Vertical shift register capacitance CP1V, CP2V - - 3500 -pF
Horizontal shift register capacitance CP1H, CP2H --60-pF
Summing gate capacitance CSG - - 5 - pF
Reset gate capacitance CRG -- 5 -pF
Transfer gate capacitance CTG - - 70 -pF
Transfer efficiency CTE *10.99995 0.99999 - -
DC output level Vout *212 15 18 V
Output impedance Zo *2-3-k
Ω
Power dissipation P *2, *3-15 -mW
*1: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*2: The values depend on the load resistance. (VOD=20 V, Load resistance=10 kΩ)
*3: Power dissipation of the on-chip amplifier.
2
CCD area image sensor
S9978
3
■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter Symbol Remark Min. Typ. Max. Unit
Saturation output voltage Vsat - - Fw × Sv - V
Vertical 120 240 -
Full well
capacity Horizontal Fw --280 -ke-
CCD node sensitivity Sv *4-2.8-µV/e
-
+25 °C -1000 15000
Dark current
(MPP mode) 0 °C DS *5
-100 1500 e-/pixel/s
Readout noise Nr *6-418e
-rms
Dynamic range Area scanning -*76667 60000 - -
Spectral response range λ- - 400 to 1100 - nm
Photo response non-uniformity PRNU *8- - ±10 %
Point defects *9--0
Cluster defects *10 --0Blemish
Column defects
-
*11 --0
-
*4: VOD=20 V , Load resistance=10 kΩ
*5: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*6: -40 °C, operating frequency is 80 kHz.
*7: DR = Fw / Nr
*8: Measured at half of the full well capacity. PRNU = noise / signal × 100 [%], noise: fixed pattern noise (peak to peak)
*9: White spots > 3 % of full well at 0 °C after Ts=1 s
Black spots
Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing one-half
of the saturation charge)
*10: 2 to 9 contiguous defective pixels
*11: 10 or more contiguous defective pixels
■ Pin connections
Pin No. Symbol Description Remark
1 RG Reset gate -
2RD Reset drain -
3 OS Output source -
4OD Output transistor drain -
5 OG Output gate -
6SG Summing gate -
7 P2H CCD horizontal register clock-2 -
8NC No connection -
9 P1H CCD horizontal register clock-1 -
10 NC No connection -
11 IG2H Test point (horizontal input gate-2) Shorted to ground
12 IG1H Test point (horizontal input gate-1) Shorted to ground
13 ISH Test point (horizontal input source) Shorted to RD
14 TG Transfer gate -
15 P2V CCD vertical register clock-2 -
16 NC No connection -
17 P1V CCD vertical register clock-1 -
18 NC No connection -
19 NC No connection -
20 SS Substrate (GND) -
21 NC No connection -
22 ISV Test point (vertical input source) Shorted to RD
23 IG2V Test point (vertical input gate-2) Shorted to ground
24 IG1V Test point (vertical input gate-1) Shorted to ground
CCD area image sensor
S9978
4
■ Dimensional outline (unit: mm)
KMPDA0140EB
1.27
3.0 2.4
12.288
22.73 ± 0.3
23.11 ± 0.3
22.86 ± 0.3
1.3 ± 0.3
2.54
30.48 ± 0.3 12
1324
12.288
27.0
R1.2
PHOTOSENSITIVE
SURFACE
PIN No. 1
■ Device structure, line output format
......
......
......
H
IG1V IG2V ISV SS
RG
RD
OS
OD OG SG
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D11
D12
D13
D14
D15
D16
D17
D18
D19
D20
1
2
3
456
20
23 2224 14 17
V=512
H=512
ISH
IG1H
IG2H
P1HP2H
13
12
1197
4 BLANK4 BLANK 4 OPTICAL
BLACK
4 ISOLATION
512
SIGNAL OUT
4 ISOLATION
TG P1V 15
P2V
1
V
Pixel format
Left ← Horizontal Direction → Right
Blank Optical Black Isolation Effective Isolation Optical Black Blank
4 4 4 512 4 - 4
Top ← Vertical Direction → Bottom
Isolation Effective Isolation
4 512 4
KMPDC0207EA
CCD area image sensor
S9978
KMPDC0208EA
INTEGRATION PERIOD
(Shutter must be open)
P1V
RG
OS
P2V, TG
P1H
P2H, SG
READOUT PERIOD (Shutter must be closed)
ENLARGED VIEW
4..519
Tpwv
Tovr
Tpwr
D1 D2 D3 D4 D18 D19 D20
D5..D12, S1..S512, D13..D17
P2V, TG
P1H
P2H, SG
RG
OS
Tpwh, Tpws
123 520←512+8 (ISOLATION)
5
■ Timing chart
● Area scanning 1 (low dark current mode)
Parameter Symbol Remark Min. Typ. Max. Unit
Pulse width Tpwv 6 18 - µs
P1V
P2V, TG Rise and fall time Tprv, Tpfv *12
200 - - ns
Pulse width Tpwh 500 5000 -ns
Rise and fall time Tprh, Tpfh 10 - - nsP1H, P2H
Duty ratio -
*12
-50 - %
Pulse width Tpws 500 5000 - ns
Rise and fall time Tprs, Tpfs 10 - - nsSG
Duty ratio -
-
-50- %
Pulse width Tpwr 100 500 -ns
RG Rise and fall time Tprr, Tpfr -5 - - ns
TG – P1H Overlap time Tovr - 3 6 - µs
*12: The clock pulses should be overlapped at 50 % of clock pulse amplitude.
CCD area image sensor
S9978
6
KMPDC0209EA
● Area scanning 2 (large full well mode)
INTEGRATION PERIOD
(Shutter must be open)
P1V
RG
OS
P2V, TG
P1H
P2H, SG
READOUT PERIOD (Shutter must be closed)
ENLARGED VIEW
4..519
520←512 + 8 (ISOLATION)
Tpwv
Tovr
Tpwr
D1 D2 D3 D4 D18 D19 D20
D5..D12, S1..S512, D13..D17
P2V, TG
P1H
P2H, SG
RG
OS
Tpwh, Tpws
123
Parameter Symbol Remark Min. Typ. Max. Unit
Pulse width Tpwv 6 18 - µs
P1V
P2V, TG Rise and fall time Tprv, Tpfv *13
200 - - ns
Pulse width Tpwh 500 5000 -ns
Rise and fall time Tprh, Tpfh 10 - - nsP1H, P2H
Duty ratio -
*13
-50 - %
Pulse width Tpws 500 5000 - ns
Rise and fall time Tprs, Tpfs 10 - - nsSG
Duty ratio -
-
-50- %
Pulse width Tpwr 100 500 -ns
RG Rise and fall time Tprr, Tpfr -5 - - ns
TG – P1H Overlap time Tovr - 3 6 - µs
*13: The clock pulses should be overlapped at 50 % of clock pulse amplitude.
■ Precaution for use (electrostatic countermeasures)
● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist strap, in
order to prevent electrostatic damage due to electrical charges from friction.
● Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
● Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to dis-
charge.
● Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.
■ Element cooling/heating temperature incline rate
When cooling the CCD by an exter nally attached cooler, set the cooler operation so that the temperature gradient (rate of
temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believ ed to be reliable. Howev er, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
Cat. No. KMPD1093E01
Feb. 2007 DN
