MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N5884 Features * PNP Silicon Complementary Power Transistor This device is designed for general-purpose power amplifier and switching applications. Maximum Ratings (1) Symbol V CEO V CBO V EBO IC IB TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Peak Base Current Operating Junction Temperature Storage Temperature Rating 80 80 5.0 25 50 7.5 -55 to +150 -55 to +150 Unit V V V Max 200 1.15 0.875 Unit W W/OC O C/W TO-3 A N A E A C O C C O K Thermal Characteristics Symbol PD RJ C Rating Total Device Dissipation Derate above 25OC Thermal Resistance, Junction to Case Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units D U V L H 2 1 OFF CHARACTERISTICS VCEO(sus) ICEO ICEX ICBO IE BO Collector-Emitter Breakdown Voltage (IC=200mAdc, IE =0) Collector Cutoff Current (VCE=40Vdc, IB =0) Collector Cutoff Current (VCE=80Vdc, VBE(off)=1.5Vdc) (VCE=80Vdc, VBE(off)=1.5Vdc, TC=150 OC) Collector Cutoff Current (VCB=80Vdc, IE =0) Emitter Cutoff Current (VEB =5.0Vdc, IC=0) 80 --- Vdc B --- 2.0 mAdc ----- 1.0 10 mAdc --- 1.0 mAdc --- 1.0 mAdc Q PIN 1. PIN 2. CASE. BASE EMITTER COLLECTOR DIMENSIONS ON CHARACTERISTICS hFE G (2) INCHES (2) DC Current Gain (V CE=4.0Vdc, IC=3.0Adc) (V CE=4.0Vdc, IC=10A) (V CE=4.0Vdc, IC=25A) VCE(sat) Collector-Emitter Saturation Voltage (2) (IC=15Adc, IB =1.5Adc) (IC=25Adc, IB =6.25Adc) VBE(sat) Base-Emitter Saturation Voltage (2) (IC=25Adc, IB =6.25Adc) VBE(on) Base-Emitter On Voltage (2) (IC=10Adc, VCE=4.0Vdc) 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width<300us, Duty Cycle<2.0% 35 20 4.0 --100 --- ----- 1.0 4.0 Vdc --- 2.5 Vdc --- 1.5 Vdc --- DIM A B C D E G H K L N Q U V MIN 1.550 ----.250 .038 0.55 .430 .215 .440 .665 ----.151 1.187 .131 MAX REF 1.050 .335 .043 0.70 BSC BSC .480 BSC .830 .165 BSC .188 MM MIN 39.37 ----6.35 0.97 1.40 10.92 5.46 11.18 16.89 ----3.84 30.15 3.33 MAX REF 26.67 8.51 1.09 1.77 BSC BSC 12.19 BSC 21.08 4.19 BSC 4.77 NOTE www.mccsemi.com Revision: 2 2003/04/30 MCC 2N5884 Symbol Parameter Min Max Units DYNAMIC CHARACTERISTICS Current-Gain--Bandwidth Product (3) (IC=1.0Adc, VCE=10Vdc, f=1.0MHz) Output Capacitance (VCB=10Vdc, IE =0, f=1.0MHz) Small-Signal Current Gain (IC=3.0Adc, VCE=4.0Vdc, f=1.0KHz) fT Cob hfe 4.0 --- MHz --- 1000 pF 20 --- --- SWITCHING CHARACTERISTICS tr ts tf Rise Time Storage Time Fall Time 3. f T =|hfe| X ftest ------- (V CC=30Vdc, IC=10Adc, IB1=IB2=1.0Adc) 1000 700 500 175 150 hFE , DC CURRENT GAIN PD, POWER DISSIPATION (WATTS) 200 125 100 75 50 200 100 70 50 us us us VCE = 4.0 V TJ = 150C 25C -55C 30 20 25 0 300 0.7 1.0 0.8 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 1. Power Derating 175 200 10 0.3 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 IC, COLLECTOR CURRENT (AMPERES) 20 30 Figure 2. DC Current Gain www.mccsemi.com Revision: 2 2003/04/30 MCC 10 7.0 5.0 t, TIME (s) 3.0 TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 ts 2.0 1.0 0.7 0.5 tf 0.3 0.2 0.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 30 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N5884 2.0 TJ = 25C 1.6 IC = 2.0 A 20 A 0.4 0 0.01 0.02 0.2 0.05 0.1 0.5 1.0 IB, BASE CURRENT (AMPERES) 2.0 5.0 10 Figure 4. Collector Saturation Region 3000 2.0 TJ = 25C Cib TJ = 25C 1.6 Cob V, VOLTAGE (VOLTS) 2000 C, CAPACITANCE (pF) 10 A 0.8 Figure 3. Turn-Off Time 1000 700 500 300 0.1 5.0 A 1.2 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 4 V 0.4 VCE(sat) @ IC/IB = 10 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance 50 100 0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPERES) Figure 6. "On" Voltages www.mccsemi.com Revision: 2 2003/04/30