SSC53L, SSC54 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier FEATURES * Low profile package * Ideal for automated placement * Guardring for overvoltage protection * Low power losses, high efficiency * Very low forward voltage drop * High surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AB (SMC) * AEC-Q101 qualified * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 5.0 A VRRM 30 V, 40 V IFSM 175 A VF 0.38 V, 0.42 V TJ max. 150 C Package DO-214AB (SMC) Diode variations Single For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified ("_X" denotes revision code e.g. A, B, .....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code SSC53L SSC54 53L S54 UNIT Maximum repetitive peak reverse voltage VRRM 30 40 V Maximum RMS voltage VRMS 21 28 V Maximum DC blocking voltage VDC 30 40 Maximum average forward rectified current at TL (fig. 1) IF(AV) 5.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 175 A dV/dt 10 000 V/s TJ - 65 to + 150 C TSTG - 65 to + 150 C Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range V Revision: 21-Jan-14 Document Number: 88885 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SSC53L, SSC54 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage (1) TJ = 25 C 5.0 A TJ = 125 C TJ = 25 C Maximum reverse current at rated VR (2) TJ = 125 C SSC53L SYMBOL TYP. VF IR SSC54 MAX. TYP. MAX. 0.42 0.45 0.45 0.49 0.33 0.38 0.36 0.42 - 0.7 - 0.5 45 65 40 60 UNIT V mA Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) SSC53L SSC54 RJA 60 RJL 20 UNIT C/W Note (1) Aluminum substrate mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.235 57T 850 7" diameter plastic tape and reel SSC53L-E3/9AT 0.235 9AT 3500 13" diameter plastic tape and reel SSC53LHE3/57T (1) 0.235 57T 850 7" diameter plastic tape and reel SSC53LHE3/9AT (1) 0.235 9AT 3500 13" diameter plastic tape and reel SSC53LHE3_A/H (1) 0.235 H 850 7" diameter plastic tape and reel SSC53LHE3_A/I (1) 0.235 I 3500 13" diameter plastic tape and reel SSC53L-E3/57T Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 200 Peak Forward Surge Current (A) Average Forward Current (A) 6 5 4 3 2 1 SSC53L SSC54 0 150 100 50 0 0 25 50 75 100 125 150 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 21-Jan-14 Document Number: 88885 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SSC53L, SSC54 www.vishay.com Vishay General Semiconductor 10 000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 150 C 10 TJ = 25 C 1 0.1 TJ = 125 C TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 1000 SSC53L SSC54 SSC53L SSC54 0.01 100 0 0.2 0.4 0.6 0.8 1 10 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Instantaneous Reverse Current (mA) TJ = 150 C 10 TJ = 125 C 1 0.1 SSC53L SSC54 0.01 TJ = 25 C 0.001 0 20 40 60 80 Fig. 5 - Typical Junction Capacitance 1000 100 100 Reverse Voltage (V) 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 21-Jan-14 Document Number: 88885 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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