Six IGBTMOD™
NF-Series Module
150 Amperes/600 Volts
CM150TL-12NF
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
110/10 Rev. 1
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration,
with each transistor having a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM150TL-12NF is a 600V (VCES),
150 Ampere Six-IGBTMOD™ Pow-
er Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 150 12
Dimensions Inches Millimeters
A 4.72 120.0
B 2.17 55.0
C 1.39 35.0
D 4.17±0.02 106.0±0.5
E 0.43 11.0
F 0.28 7.0
G 0.54 13.62
H 1.61 40.78
J 0.67 17.0
K 0.47 12.0
L M5 M5
M 0.22 Dia. Dia. 5.5
Dimensions Inches Millimeters
N 1.23 32.0
P 0.47 11.75
Q 0.53 13.5
R 0.91 23.0
S 0.87 22.0
T 0.76 19.75
U 0.42 10.75
V 0.87+0.04/-0.02 22.0+1.0/-0.5
W 0.91 23.2
X 0.63 16.0
Y 0.12 3.0
Outline Drawing and Circuit Diagram
Housing Types (J.S.T. Mfg. Co. Ltd.)
AA – B8P-VH-FB-B
AB – B2P-VH-FB-B
A
E
D
H J
GJ
F
C
V
L
M
N
W
X
B
K
K
K
Q
Y
P
K
K
K
K
SR
T
U
R R
8 1 1 1 1
P
NC
NC
NC
B
UP-1
UP-2
CN-5
CN-6
U
VP-1
VP-2
CN-3
CN-4
V
WP-1
WP-2
CN-1
CN-2
W
CN-7
CN-8
N
AA
CN UP VP WP
N
P
B U V W
AB
CM150TL-12NF
Six IGBTMOD™ NF-Series Module
150 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
2 10/10 Rev. 1
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol CM150TL-12NF Units
Power Device Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E Short) VCES 600 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current (TC = 93°C)* IC 150 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 300** Amperes
Emitter Current*** IE 150 Amperes
Peak Emitter Current*** IEM 300** Amperes
Maximum Collector Dissipation (TC = 25°C, Tj < 150°C) PC 730 Watts
Mounting Torque, M5 Mounting Screws — 31 in-lb
Mounting Torque, M5 Main Terminal Screws — 31 in-lb
Module Weight (Typical) — 350 Grams
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current ICES V
CE = VCES, VGE = 0V — — 1.0 mA
Gate-Emitter Threshold Voltage VGE(th) I
C = 15mA, VCE = 10V 6 7 8 Volts
Gate Leakage Current IGES V
GE = VGES, VCE = 0V — — 0.5 µA
Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C — 1.7 2.2 Volts
IC = 150A, VGE = 15V, Tj = 125°C — 1.7 — Volts
Input Capacitance Cies — — 23.0 nf
Output Capacitance Coes V
CE = 10V, VGE = 0V — — 2.8 nf
Reverse Transfer Capacitance Cres — — 0.9 nf
Total Gate Charge QG V
CC = 300V, IC = 150A, VGE = 15V — 600 — nC
Inductive Turn-on Delay Time td(on) — — 120 ns
Load Turn-on Rise Time tr V
CC = 300V, IC = 150A, — — 100 ns
Switch Turn-off Delay Time td(off) V
GE1 = VGE2 = 15V, — — 300 ns
Time Turn-off Fall Time tf R
G = 4.2Ω, IE = 150A, — — 300 ns
Reverse Recovery Time*** trr Inductive Load Switching Operation — — 150 ns
Reverse Recovery Charge*** Qrr — 2.5 — µC
Emitter-Collector Voltage*** VEC I
E = 150A, VGE = 0V — — 2.8 Volts
*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CM150TL-12NF
Six IGBTMOD™ NF-Series Module
150 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
310/10 Rev. 1
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case* Rth(j-c)Q Per IGBT 1/6 Module — — 0.17 °C/W
Thermal Resistance, Junction to Case* Rth(j-c)D Per FWDi 1/6 Module — — 0.31 °C/W
Contact Thermal Resistance Rth(c-f) Per 1/6 Module, Thermal Grease Applied — — 0.085 °C/W
External Gate Resistance RG 4.2 — 42 Ω
*TC, Tf measured point is just under the chips.
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
100102
102
101
100
10-1
101
0 1 3 42 5
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
103
EMITTER CURRENT, IE, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
6 8 10 1412 16 18 20
8
6
4
2
0
Tj = 25°C
Tj = 25°C
Tj = 125°C
VGE = 0V
Cies
Coes
Cres
IC = 300A
IC = 150A
IC = 60A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0 2 4 6 8 10
0
VGE = 20V
10
11
12
13
15
9
8
Tj = 25°C
300
75
150
225
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
4
3
0
2
1
030022575 150
VGE = 15V
Tj = 25°C
Tj = 125°C
10-1
COLLECTOR CURRENT, IC, (AMPERES)
103
102
101102
101
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
trVCC = 300V
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
Inductive Load
tf
103
CM150TL-12NF
Six IGBTMOD™ NF-Series Module
150 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
4 10/10 Rev. 1
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
100
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.17°C/W
(IGBT)
Rth(j-c) =
0.31°C/W
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
GATE RESISTANCE, RG, (Ω)
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
102
100101
101
100
VCC = 300V
VGE = ±15V
IC = 150A
Tj = 125°C
Inductive Load
C Snubber at Bus
102
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
ESW(on)
ESW(off)
GATE RESISTANCE, RG, (Ω)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
101
100101
100
10-1
VCC = 300V
VGE = ±15V
IE = 150A
Tj = 125°C
Inductive Load
C Snubber at Bus
102
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
101
101102
100
10-1
VCC = 300V
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
103
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
Err
Err
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE VS. VGE
20
0
16
12
8
4
0
200 400 600 1000800
VCC = 300V
VCC = 200V
IC = 150A
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101102
102
101
103
102
101
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
103
VCC = 300V
VGE = ±15V
RG = 4.2Ω
Tj = 25°C
Inductive Load
Irr
trr
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
101
101102
100
10-1
VCC = 300V
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
103
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
ESW(on)
ESW(off)