2SC3233
2002-07-23
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3233
Switching Regulator and High Voltage Switching
Applications
High Speed DC-DC Converter Applications
• Excellent switching times: tr = 1.0 μs (max)
t
f = 1.0 μs (max), (IC = 0.8 A)
• High collector breakdown voltage: VCEO = 400 V
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 500 V
Collector-emitter voltage VCEO 400 V
Emitter-base voltage VEBO 7 V
Collector current IC 2 A
Base current IB 0.5 A
Ta = 25°C 1.0
Collector power
dissipation Tc = 25°C
PC
20
W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-7B1A
Weight: 0.36 g (typ.)
JEDEC ―
JEITA ―
TOSHIBA 2-7J1A
Weight: 0.36 g (typ.)
2SC3233
2002-07-23
2
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 400 V, IE = 0 ― ― 100 μA
Emitter cut-off current IEBO V
EB = 7 V, IC = 0 ― ― 1 mA
Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 500 ― ― V
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 400 ― ― V
VCE = 5 V, IC = 0.1 A 20 ― ―
DC current gain hFE
VCE = 5 V, IC = 1 A 8 ― ―
Collector-emitter saturation voltage VCE (sat) I
C = 1 A, IB = 0.2 A ― ― 1.0 V
Base-emitter saturation voltage VBE (sat) I
C = 1 A, IB = 0.2 A ― ― 1.5 V
Rise time tr ― ― 1.0
Storage time tstg ― ― 2.5
Switching time
Fall time tf
IB1 = −IB2 = 0.08 A
DUTY CYCLE ≤ 1%
― ― 1.0
μs
Marking
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
20 μs
INPUT
IB1
IB2
OUTPUT
VCC ≈ 200 V
IB1
250 Ω
IB2
C3233 Product No.
Lot No.
2SC3233
2002-07-23
3
Transient thermal resistance
rth (°C/W)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Collector current IC (A)
hFE – IC
DC current gain hFE
Pulse width tw (s)
rth – tw
Collector current IC (A)
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (A)
VBE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
0
0
Common emitter
Tc = 25°C
IB = 10 mA
2.0
1.6
0.8
2 6 10 12 16
40
60
14 8 4
20
80
120
180
1.2
0.4
200
Tc = 100°C
−55
25
30
0.001 0.1 10
Common emitter
VCE = 5 V
0.003 0.3
3
100
50
1 3
5
10
0.03
0.005
3
Tc = −55°C
100
25
0.3
0.01 0.3 10
Common emitter
IC/IB = 5
0.1 1 3
1
0.5
0.1
0.05
0.03
0.005
5
Tc = −55°C
25
0.3
0.01 0.3 10
Common emitter
IC/IB = 5
0.1 1 3
1
0.5
0.03
3
100
0.1
0
0
2.0
1.6
1.2
0.8
0.4
Common emitter
VCE = 5 V
1.4 0.2 0.4 0.6 0.8 1.0 1.2
Tc = 100°C −55
25
0.001
100
0.01 0.1 1 10 1000
10
1
(1)
(2)
1000
100
Curves should be applied in
thermal limited area. (single
nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
10
1000
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max
(continuous)
IC max (pulsed)*
DC operation
Tc = 25°C
1 ms*
3 ms*
10 ms*
100 μs*
10 μs*
500 μs*
100 ms*
10 100 300 303
5
3
1
0.5
0.3
0.1
2SC3233
2002-07-23
4
RESTRICTIONS ON PRODUCT USE 20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
