© 2000 IXYS All rights reserved 1 - 3
Phase Control Thyristors VRRM = 800-1400 V
IT(RMS) = 120 A
IT(AV)M = 69 A
VRSM VRRM Type
VDSM VDRM
VV
900 800 CS 35-08io4
1300 1200 CS 35-12io4
1500 1400 CS 35-14io4
Symbol Test Conditions Maximum Ratings
IT(RMS) TVJ = TVJM 120 A
IT(AV)M Tcase = 85°C; 180° sine 63 A
Tcase = 80°C; 180° sine 69 A
ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1200 A
VR = 0 t = 8.3 ms (60 Hz), sine 1340 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1100 A
VR = 0 t = 8.3 ms (60 Hz), sine 1250 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 7200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 7550 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 6050 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 6500 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 150 A 150 A/ms
f = 50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 0.5 A non repetitive, IT = IT(AV)M 400 A/ms
diG/dt = 0.5 A/ms
(dv/dt)cr TVJ = TVJM;V
DR = 2/3 VDRM 1000 V/ms
RGK = ¥; method 1 (linear voltage rise)
PGM TVJ = TVJM tP = 30 ms10W
IT = IT(AV)M tP = 500 ms5W
PG(AV) 0.5 W
VRGM 10 V
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
MdMounting torque 2.5 Nm
22 lb.in.
Weight 20 g
Features
●Thyristor for line frequencies
●International standard package
JEDEC TO-208AC
●Planar glassivated chip
●Long-term stability of blocking
currents and voltages
Applications
●Motor control
●Power converter
●AC power controller
Advantages
●Space and weight savings
●Simple mounting
●Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
CS 35
12
3
TO-208AC
(TO-65)
1 = Anode, 2 = Cathode, 3 = Gate
¼"-28 UNF-2 A
2
3
1
© 2000 IXYS All rights reserved 2 - 3
Symbol Test Conditions Characteristic Values
IR, IDTVJ = TVJM; VR = VRRM; VD = VDRM £10 mA
VTIT= 150 A; TVJ = 25°C£1.5 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.85 V
rT3.5 mW
VGT VD = 6 V; TVJ = 25°C£1.5 V
TVJ = -40°C£1.9 V
IGT VD = 6 V; TVJ = 25°C£100 mA
TVJ = -40°C£200 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM £0.2 V
IGD £1mA
ILTVJ = 25°C; tP = 30 ms£100 mA
IG = 0.1 A; diG/dt = 0.1 A/ms
IHTVJ = 25°C; VD = 6 V; RGK = ¥ £ 80 mA
tgd TVJ = 25°C; VD = 1/2 VDRM £2ms
IG = 0.1 A; diG/dt = 0.1 A/ms
tqTVJ = TVJM; IT = 50 A, tP = 200 ms; di/dt = -10 A/ms typ. 100 ms
VR = 100 V; dv/dt = 10 V/ms; VD = 2/3 VDRM
RthJC DC current 0.4 K/W
RthJH DC current 0.6 K/W
dSCreepage distance on surface 1.7 mm
dAStrike distance through air 1.7 mm
aMax. acceleration, 50 Hz 50 m/s2
CS 35
01234
0
100
200
300
400
500
100101102103104
0.2
0.4
0.6
0.8
2
4
6
8
0.1
1
10
IT
VG
IGVT
A
mA V
V
Fig. 1 Gate trigger range
Triggering:
A = no; B = possible, C = safe
Fig. 2 On-state characteristics
TVJ= 25°C
TVJ= 125°C
2 4 6 8
IGD: TVJ= 25°C
IGD: TVJ=125°C
A
BIGD: TVJ= -40°C
IGD: TVJ= 0°C
IGD: TVJ= 25°C
3
2
1
1: PG(AV)= 0.5 W
2: PGM= 5 W; tG = 500 ms
3: PGM= 10 W; tG = 30 ms
C
typ. lim.
© 2000 IXYS All rights reserved 3 - 3
0 50 100 150
0
50
100
150
23456789110
103
104
10-3 10-2 10-1 100101
0
200
400
600
800
1000
1200
0 20 40 60 80 100 120 140
0
50
100
150
200
50 100 150
0
10-3 10-2 10-1 100101102
0.0
0.2
0.4
0.6
0.8
I2t
ITSM
A
ttTc
PT
W
IT(AV)M
ATamb
ts
ZthJH
K/W
A
A2s
s
°C
ms °C
2
4
6IT(AV)M
30°
60°
120°
180°
DC
CS 35
Fig. 3 Surge overload current
ITSM: crest value, t: duration Fig. 4 I2t versus time (1-10 ms)
Fig. 6 Power dissipation versus on-state current and ambient temperature
Fig. 5 Maximum forward current at
case temperature
Fig. 7 Transient thermal impedance junction to heatsink
RthJH for various conduction angles d:
dR
thJH (K/W)
DC 0.6
180°0.65
120°0.677
60°0.725
30°0.775
Constants for ZthJH calculation:
iR
thi (K/W) ti (s)
1 0.01 0.001
2 0.09 0.013
3 0.30 0.3
4 0.20 0.9
50Hz, 80%VRRM
TVJ = 45°C
TVJ = 125°C
VR = 0 V
TVJ = 45°C
TVJ = 125°C
DC
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
RthJA :
0.9 K/W
1.3 K/W
1.6 K/W
3.3 K/W
ase
