MAXIMUM RATINGS (TA=25°C)
CBR50- CBR50- CBR50- CBR50- CBR50-
SYMBOL 020PW 040PW 060PW 080PW 100PW UNITS
Peak Repetitive Reverse Voltage VRRM 200 400 600 800 1000 V
DC Blocking Voltage VR200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 140 280 420 560 700 V
Average Forward Current (TC=55°C) IO50 A
Peak Forward Surge Current IFSM 400 A
Operating and Storage
Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJC 1.5 °C/W
RMS Isolation Voltage (case to lead) Viso 2500 Vac
ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IRVR=Rated VRRM, TC=25°C 5.0 µA
IRVR=Rated VRRM, TC=125°C 500 µA
VFIF=25A 1.1 V
CJVR=4.0V, f=1.0MHz 300 pF
CBR50-020PW SERIES
50 AMP
SILICON BRIDGE RECTIFIER
200 thru 1000 VOLTS
CASE FPW
Central
Semiconductor Corp.
TM
R0 (31-August 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR50-
020PW series types are silicon single phase full
wave bridge rectifiers designed for general
purpose applications. The molded epoxy case has
a built in metal baseplate for heat sink mounting.
MARKING CODE: FULL PART NUMBER
Central
Semiconductor Corp.
TM
CASE FPW - MECHANICAL OUTLINE
CBR50-020PW SERIES
50 AMP
SILICON BRIDGE RECTIFIER
200 thru 1000 VOLTS
R0 (31-August 2004)
MARKING CODE:
FULL PART NUMBER
SYMBOL
MIN MAX MIN MAX
A 1.115 1.135 28.32 28.83
B 0.692 0.732 17.58 18.59
C 0.430 0.470 10.92 11.94
D (DIA) 0.200 0.220 5.08 5.59
E 0.038 0.042 0.97 1.07
F 0.290 0.310 7.37 7.87
G 1.250 - 31.75 -
CASE FPW (REV:R1)
DIMENSIONS
INCHES MILLIMETERS
