1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914 BLACK BROWN FDLL914A BLACK GRAY FDLL914B BROWN BLACK FDLL916 BLACK RED FDLL916A BLACK WHITE FDLL916B BROWN BROWN FDLL4148 BLACK BROWN FDLL4448 BROWN BLACK -1st band denotes cathode terminal and has wider width Absolute Maximum Ratings* T =25C unless otherwise noted a Symbol Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 100 V IO Average Rectified Forward Current 200 mA IF DC Forward Current 300 mA if Recurrent Peak Forward Current 400 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 4.0 A A TSTG Storage Temperature Range -65 to + 175 C TJ Operating Junction Tempera -65 to + 175 C * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Max. Parameter 1N/FDLL 914/A/B / 4148 / 4448 Units PD Power Dissipation 500 mW RJA Thermal Resistance, Junction to Ambient 300 C/W (c)2007 Fairchild Semiconductor Corporation 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2 1 www.fairchildsemi.com 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode January 2007 Symbol TA=25C unless otherwise noted Parameter VR Breakdown Voltage VF Forward Voltage IR Reverse Leakage CT Total Capacitance 1N916A/B/4448 1N914A/B/4148 trr Test Conditions 1N914B/4448 1N916B 1N914/916/4148 1N914A/916A 1N916B 1N914B/4448 Reverse Recovery Time Min. IR = 100A IR = 5.0A 100 75 IF = 5.0mA IF = 5.0mA IF = 10mA IF = 20mA IF = 20mA IF = 100mA 620 630 Max. Units V V 720 730 1.0 1.0 1.0 1.0 mV mV V V V V VR = 20V VR = 20V, TA = 150C VR = 75V 25 50 5.0 nA A A VR = 0, f = 1.0MHz VR = 0, f = 1.0MHz 2.0 4.0 pF pF IF = 10mA, VR = 6.0V (600mA) Irr = 1.0mA, RL = 100 4.0 ns * Non-recurrent square wave PW = 8.3ms Typical Characteristics 120 160 o o Ta= 25 C [nA] 150 100 140 80 Reverse Current, I Reverse Voltage, V R R [V] Ta=25 C 130 120 60 40 20 110 1 2 3 5 10 20 30 50 0 100 10 20 30 50 Reverse Voltage, VR [V] Reverse Current, IR [uA] 70 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100A Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100V 750 550 o Ta= 25 C o 650 Forward Voltage, V Forward Voltage, V 450 400 350 300 250 700 F [mV] 500 R [mV] Ta= 25 C 600 550 500 450 1 2 3 5 10 20 30 50 0.1 100 Forward Current, IF [uA] 0.3 0.5 1 2 3 5 10 Forward Current, IF [mA] Figure 3. Forward Voltage vs Forward Current VF - 1 to 100A Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10mA 2 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2 0.2 www.fairchildsemi.com 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Electrical Characteristics* (Continued) 900 1.6 o Forward Voltage, V F [mV] [mV] Ta= 25 C Typical 800 o Ta= -40 C 700 Forward Voltage, V F 1.4 1.2 1.0 0.8 o Ta= 25 C 600 500 o Ta= +65 C 400 300 0.6 10 20 30 50 100 200 300 500 800 0.01 0.3 0.1 0.03 Forward Current, IF [mA] 3 1 10 Forward Current, IF [mA] Figure 5. Forward Voltage vs Forward Current VF - 10 to 800mA Figure 6. Forward Voltage vs Ambient Temperature VF - 0.01 - 20 mA (- 40 to +65C) 4.0 0.90 o Ta = 25 C [ns] o 3.5 Reverse Recovery Time, t Total Capacitance (pF) rr TA = 25 C 0.85 0.80 3.0 2.5 2.0 1.5 1.0 10 0.75 0 2 4 6 8 10 12 14 20 30 40 50 60 Reverse Recovery Current, Irr [mA] REVERSE VOLTAGE (V) IF = 10mA , IRR = 1.0 mA , Rloop = 100 Ohms Figure 8. Reverse Recovery Time vs Reverse Recovery Current Figure 7. Total Capacitance 500 Power Dissipation, PD [mW] 500 400 Current (mA) 400 DO-35 300 300 IF( AV) 200 100 - AVE RAG E RE CTIF IED C URRE NT mA SOT-23 200 100 0 0 0 50 100 0 150 100 150 200 Temperature [ C] Ambient Temperature ( C) Figure 10. Power Derating Curve Figure 9. Average Rectified Current (IF(AV)) vs Ambient Temperature (TA) 3 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2 50 o o www.fairchildsemi.com 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Typical Characteristics The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 4 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2 www.fairchildsemi.com 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode FAIRCHILD SEMICONDUCTOR TRADEMARKS