2N4338-2N4876 Numerical Index ale MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS || REPLACE- | PAGE P Blu y y = fee @ | Vi @l Bl a cd D J CE PE FE c CESAT ic = -_ 5 Tee 2) | nent | numper | USE 3 ce = g| Koom@le) 4, 5 ale == @ 25C | B| C | (volts) | (volts) |S | (min) (max) 5] (volts) 5 3 5/2 2N4338 thru Field Effect Transistors, see Table on Page 1-166 2N4343 2N4346 LPA 5.0W]A 60} 0 2N4347 S|N LPA 100W | c 140} 120] 0 15 60 2.0A 2N4348 S}N LPA 120W ) Cc 140} 120] 0 15 60 5.0A 2N4350 S|[N LPA 7.0W]C 65 40 }0 10 |] 200 | 0.35A 300M } T pu Field Effect Transistors, see Table on Page 1+166 2N4354 S| P LNA 350M } A 125 60! 69) 0 25 O.1M 500M 7 T 2N4355 s|P LNA 350M | A 125 60 60,0 60 0.1M 500M | T 2N4356 | S| P LNA} 350M]A] 125] so} 80}0] 25 0.1M 500M | T 2N4359 S| P LNA 360M {A 200 45 4510 50 | 600 1.0M 0,25 LOM 50 j,E 2N4360 Field Effect Transistor, see Table on Page 1-166 2N4361 thru Thyristors, see Table on Page 1-154 2N4380 Breet) Field Effect Transistors, see Table on Page 1-166 2N4383 S|N RFA 800M | A 200 40 3010 1000 |E 120M | T 2N4384 S|N RFA 500M | A 200 40 3040 1000 | E 120M | T 2N4385 S|[N RFA 800M {A 200 40 30 | 0 1000 |E 120M [T 2N4.386 S|N RFA 500M FA 200) 40 30 | 0 1000 | E 120M | T 2N4387 S|] P 20W | A 200 40 40 | 0 25 | 100 500M 2N4388 S|] P 20W | A 200 60 6040 25 | 100 500M 2N4389 S|P HSS 200M 1A 125! 12 12 10 30 | 180 LOM Q.15 10M 4 4.0 JE 2N4390 S{N MSS 500M [A 175 120) 120 ]/0 20 2.0M 50M | T 2N4391 thru Field Effect Transistors, see Table on Page 1-166 2N4393 2N4395 S|N 2N3715 | 7-125 LPA | 62.5W }C 60 40 |0 50 | 170 2.0A 4M |T 2N4396 S|N 2N3715 | 7-125 LPA | 62.5W | C 80 60/0 40 1170 2,0A 4M |T 2N4398 S|P 7-167 LPA 200W | C 200 40 40 |0 15 60 154A 1.0 15A 40 /E AM |T 2N4399 S| P 7-167 LPA 200W | C 200 60 60/0 15 60 15A 1.0 15A 40 ]E 4M [T 2n4400 S|N 5-34 HSA 310M FA 135 66 40 40 50 | 150 150M 0.4 150M 20 |E 200M |T 2N4401 SIN 5-34 HSA 310M | A 135 60 40 | 0 |100 | 300 150M 0.4 150M 40 /E 250M | T 2N4402 S|P 5-39 HSA 310M | A 135 40 40/0 50 | 150 150M 0.4 150M 30 |E 150M |T 2N4403 S| P 5-39 HSA 310M |A 135 40 40 10 |100 | 300 150M 0.4 150M 60 |E 200M | T 2N4409 S}N 5-45 MSS 310M TA 135 80 50 [0 60 | 400 1.0M 0.2 1.0M 2N4410 S|N 5-45 MSS 310M | A 135 120 80 | 0 60 | 400 1.0M. 0.2 1.0M 2N4411 |S] P 8-302 | MSA| 150M ]A | 200 15} 12 ]0 | 40 0.5M 400M | T 2N4412 S|N RFA 600M | A 200 40 30 |0 1000 JE LOOM | T 2N4412A |S] P RFA 600M }A 200) 60 60 )0 120 |E 20M |T 2N4413 S|P RFA 400M FA 200 40 30 |0 1000 |E 100M /T 2N4413A |S | P RFA 400M }A 200 60 60 ]0 120 JE 20M |T 2N4414 S|]P RFA 600M |A 200 40 30 |0 1000 JE 100M |T 2N4414A |S | P REA 600M 1A 200 60 60 1O 100 JE 20M )T 2N4415 S| P RFA 400M FA 200 40 30/0 1000 | E 100M jT 2N4415A |S | P RFA 400M | A 200 60 60 |O 100 JE 20M | T pune Field Effect Transistors, see Table on Page 1-166 2N4418 S|N 2N4 264 | 5-29 MSA 250M 4A 125 40 40 |s 40 | 120 10M 500M {T 2N4419 SIN 2N4264 | 5-29 MSA 250M [A 125 30 30 {4S 30 LOM 400M 1 T 2N4420 S|N MPS3646] 5-95 MSA 250M |A 125 40 40/5 30 | 120 30M 350M }T 2N4421 SIN MPS 3646] 5-95 MSA 250M [A 125 30 30 1S 25 30M 300M )T 2N4422 |S |N | MPS3646] 5-95 MSA | 250M {A | 125 40] 40 |s { 30 ]120 30M 350M |T 2N4423 SIN MPS3640] 5-93 MSA 250M | A 125 12 1248 40 1150 30M 400M | T 2N4424 SIN MPS 3711) 5-100 MSA 360M |A 150 40 40 |0 180 |E 2N4425 SUN MSA 560M [A 150 40 40 |O {180 2M 2N4427 S|N LPA 3.5W ]C 40 20 |0 10 | 200 O.1A 500M | T 2N44 28 S]N LPA 3.5W [C 55 35 |0 20 | 200 |0.05A 700M |T 2N4429 S JN LPA 5.0W |C 55 35 |0 20 | 200 |0.05A 700M | T 2N4430 S[N LPA 10W 1c 55 40 |0 20 | 200 Q.,1A 600M |T 2N4431 S|N LPA 18w | Cc 55 40 ]0 20 | 200 O.1A 600M | T 2N4432 S|N RFA 600M ;A 50 30 10 40 {130 6.0M 45 }E 2N4432A 1S [N RFA 600M |A 50 30 |0 80 1150 6.0M 90 JE 2N4440 SIN LPA | 11.6W |C 65 40 |0 10 | 200 |0.1254 400M |T 2N4441 thru Thyristors, see Table on Page 1-154 2N4444 2n4576 [Ss |N | 2N3716 ]7-125 | HPA | 150W |c | 200| 100] 80 ]o | 50/150] 1.0A | 0.8] 5.0A | 25 |B | 30K JE 2N4851 they Unijunction Transistors, see Table on Page 1-174 2N4853 2N4854 c 1 aa HSS 300M JA 200 60 40 |o 50 1.0M 200M |T 2N4855 omplementary Pair Hss | 300M JA | 200] 60] 40 jo } 25 1.0M 200M |T 2N4856 thru Field Effect Transistors, see Table on Page 1-166 2N4861 ane Unijunction Transistors, see Table on Page 1+174 2N4872 S |P HSS 700M |C 200 12 12 |0 50 |120 10M 0.13 1L.OM | 9.0 {E 2N4873 SIN HSS 360M 1A 200 40 15 {oO {110 {150 10M 0.2 10M 7.0 1E 2N4874 SIN RFA 720M |A 175 30 20 [0 200 |E 900M [T 2N4875 Ss |N RFA 720M |A 175 40 25 |0 200 JE 800M |T 2N4876 S {N RFA 720M {A 175 40 30 10 200 |E 650M |T 1-148Economy Transistors Uj Y PLASTIC SILICON SMALL-SIGNAL TRANSISTORS Z CURRENT versus VOLTAGE SELECTOR GUIDE Y \e 50 pA -5.0mA 5.0 mA - 25 mA 25 mA- 75 mA 75 mA - 500 mA Vceo Y Volts (Min) PNP NPN PNP NPN PNP NPN Pne NPN Y <10 MPS3639 Y, 10 MPS918 |MPS3640 |2N4264 MPS3646 Yy MPS2711 2N4265 Y MPS2712 MPS706 Yy MPS2713 MPS2369 Y MPS2714 MPS3563 Y MPS2715 Y, MPS2716 Y ' MPS2926 Y 19 MP$3721 Y 20 2N4126 | 2N4124 |MPS3638 | MPS6511] MPS3702 | MPS3706| MPS6562 | MPS6560 Y MPS6519 | 2N5089 | MPS3638A| MPS2923 MPS6563 | MPS6561 Y MPS6579 | MPS2923 MPS6552 Y MPS6580 | MPS2924 MPS6553 Y MPS2925 MPS6554 Y MPS3392 MPS6555 Y MPS3393 MPS6541 Y MPS3394 MPS6543 Y MPS3395 MPS6548 Y MPS3396 MPS6568 Y MPS3397 MPS6569 Y MPS3398 MPS6570 Y MPS6507 Y MPS6514 Y MPS6515 Y, MPS6539 Y MPS6542 Y MPS6546 Y, ' MPS6547 Y 29 MPS6571 Y 30 2N4125 | 2N4123 MPS5834 | MPS3703 | MPs3704 |} MPS6535 | MPS6532 Y 2N5088 MPS3705 Y MPS3707 Y MPS3708 Y MPS3709 Y MPS3710 Y MPS3711 Y MPS3712 Y MPS3713 Y MPS6540 Yy ' MPS6573 Y 39 MPS6574 Y 40 MPs6516 | MPS6575 |2N3905 |2N3903 MpPs6544 | 2N4402 | 2N4400 Y MPS6517 | MPS6576 |2N3906 |2N3904 MPS6545 }2N4403 | 2N4401 Y MPS6518 MPS3693 MPS6533 | MPS6530 Y MPS3694 MpPS6534 | MPS6531 Y MPS3826 Y MPS3827 GY MPS6564 Y MPS6565 Y MPS6566 Y 49 MPS6567 Y >50 2N5086 | 2N4409 Y | 2N5087 | 2N4410 4YW. .. FE>QN KLEE AAA 1. SMALL-SIGNAL AMPLIFIERS (LOW CURRENT) All devices in Case 29 (1) Economy Transistors MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted) t ceo | Yee Vee eso nee @ Ig (ma) Veetat) 'g f @ Ie Son ype NPN a 1a 20 Volts Volts Volts stA(Max) Volts( Max) mA MHz(Min) mA pF (Max) PnP * Min Max Min Max Min Max 2N5086* 50 50 3.0 0.01 150 590 | 150 - - - 0.3 10 40 0.5 4.0 |__2n5087 50 50 3.0 0.01 250 goo_| 250 : : - 0.3 10 40 0.5 4.9 2N5088 30 35 4.5 0.05 300 900 | 350 0.5 10 50/175** | 0.5 4.04 2N5089 25 30 4.5 0.05 400 1200 | 450 - : - 0.5 10 50/175 | 0,5 4.04 MPS918 15 30 3.0 0.01 - - - - 20 - 0.4 10 600 4.0 1.7 MPS3707 30 30 6.0 0.1 100 400 - - - - 1.0 10 - : - MPS3708 30 30 6.0 0.1 - - 45 660 - - 1.0 10 - - - MPS3709 30 30 6.0 0.1 - : 45 165 : : 1.0 10 - - - MPS3710 30 30 6.0 0.1 - : 90 330 : - 1.0 10 - - - MPS$3711 30 30 6.0 0.1 - - 180 660 - - 1.0 10 : - : MPS6520 25 40 4.0 0.05 100 : - - 200 | 400 0.5 50 390** 2.0 3.6 MPs6521 25 40 4.0 0.05 150 - - - 300 | 600 0.5 50 390** 2.0 3.5 MPS6522" | 25 2 a0 0.05 100 . 7 200 | 400 0.5 56 340"* 2.0 +0 Mps6523* | 25 25 4.0 0.05 150 - - - 300 | 600 0.5 50 340+ * 2.0 4.0 OK Typical +. SMALL-SIGNAL AMPLIFIERS (MEDIUM CURRENT) All devices in Case 29 (1) MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (Ty = 25C unless otherwise noted) Yeea Vee Yea cao bre e 4g (ma Yeeiay Ic " e Son Type 20 0 NPA Vaoits Volts Volts ik (Mex) wo Volts {Max} mA Miz (Min) mA pe (Max) PNP + Mia Max Min Mex Min Max MPS2711 18 18 5.0 0.5 30 90 - - - - - - - - 4.0 MPS2712 18 18 5.0 0.5 15 225 - - - : - - - - 4.0 MPS$2715 18 18 5.0 0.5 30 90 - - - - - - - - 3.5 MPS2716 18 18 5.0 0.5 7% 225 - - - : : - - - 3.5 MPS2023 25 25 5.0 0.5 90 180 : - - - - - - - 12 MPS2924 25 25 5.0 0.5 150 300 - - - - - - - 12 MPS2925 25 25 5.0 0.5 235 470 - : - : - - - - 12 MPS2926 18 18 5.0 0.5 35 470#| - - - - : - 3008" 4.0 3.5 MPS3392 25 25 5.0 0.1 150 300 - - : - - - - - 3.5 MPS3393 25 25 5.0 0.1 90 180 - : - - - - - 2.0 3.5 MPS3394 25 25 5.0 0.1 55 110 - - - - ~ . - a5 MPS$3395 25 25 5.0 0.1 150 500 - - - - - - - - 3.5 MPS3396 25 25 5.0 0.1 90 500 : - - - - - - - 3.5 MPS3307 25 25 5.0 0.1 55 500 : - - : - - - - 3.5 MPS3398 25, 25 5.0 0.1 55 800 - - - - . - : - 3.5 MPS3563 12 30 2.0 0.05 20 200 : : 600 8.0 1.7 MPS3693 45 45 4.0 0.05 - - 40 160 - - - - 200 10 3.5 MPS3694 45 45 4.0 0.05 : - 100 | 400 - - - - 200 10 3.5 MPS3721 18 18 5.0 0.5 60 6608) - - - - : - - : 3.5 MPS3826 45 60 4.0 0.1 - - 40 160 - - - - 200 10 3.5 MPS3627 45 60 4.0 0.1 - - 100 | 400 - - 200 10 3.5 MPS6507 20 30 3.0 0.05 25 - - : - - - - 700 10 2.5 MPS6511 20 30 3.0 0.05 : - 25 - - - - - - - 2.5 MPS6512 30 40 4.0 0.05 50 woo | - - 30 - 0.5 50 2500 2.0 3.5 MPS6513 30 40 4.0 0.05 90 180 - - 60 - 0.5 50 250** 2.0 3.5 MPS6514 25 40 4.0 0.05 150 300} - - 90 - 0.5 50 390** 2.0 3.5 MPS6515 25 40 4.0 0.05 250 soo | - - 150 - 0.5 50 390* 2.0 3.5 | ~ MPS516 40 40 4.0 0.05 50 100 > ~ 30 = OS 30 200* * 2.0 4.0 MPS6517*] 40 40 4.0 0.05 90 180 | - - 60 - 0.5 50 200** 2.0 4.0 MPs65i8e] 40 40 4.0 0.05 150 300 - - 90 - 0.5 50 340** 2.0 4.0 MPss5i94] 25 25 4.0 0.05 250 500 - - 150 - 0.5 50 340** 2.0 4.0 ** Typical # bye 1.0 kHz NIXIE DRIVERS All devices in Case 29 (1) MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS (Tr = 25C unless otherwise noted) Min Vceo Yep 8Vcex cao Vea MEE ax Vee & Vaeisn Veeion) @ ' fe Ie Ch @ VcB Tye @ igima) Volts Volts Vatts (Min) wAlMax) Volt: Volts (Max) mA MHz( Min/Max) mA pF (Mex) Vatts NPN 10 [10 2N4409 50 5.0 g0* 0.01 so | 60 | 60. 0.2 0.8 0.8 1.0 | 60/300 10 12 10 400 - 2N4410 80 5.0 120" 0.01 100 | 6o | 60. 0.2 0.8 0.8 1.0 | 60/300 10 12 10 400 | = = = Ror 8.2 k ohms, Ven 5.0V 5-62N4409 (siutcon) 2n4410 = NPN silicon epitaxial transistors designed for driving neon display tubes. Features one-piece, injec- Economy Transistors tion-molded plastic package for high reliability. CASE 29(1) (TO-92) MAXIMUM RATINGS (1a = 25C unless otherwise noted) Rating Symbol 2N4409 2N4410 Unit Collector- Emitter Voltage Vo EO 50 80 Vde Collector-Base Voltage Vos 80 120 Vde Emitter-Base Volt age Ven 5 5 Vde Collector Current - Continuous In 250 mAdc Total Device Dissipation @ T, = 25C Py 310 mW Derate above 25C 2.81 mw/C renters Reem Ty, Tye -55 to +135 C THERMAL RESISTANCE: 6s. = 0.357C/mW ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS | Symbol Min Max| Unit Collector- Emitter Breakdown Voltage (Ig = 1 mAde, I, = 0) 2N4409 2N4410 BVoro 50 80 Vde ColNector- Emitter Breakdown Voltage (To = 500 pAde, Ypp =5 Vde, Ro, = 8,2 k ohms) 2N4409 2N4410 BVorx 80 120 Vde Collector-Base Breakdown Voltage (Iq = 10 pAde, I, = 0) 2N4409 2N4410 BVoBo 80 120 Vdc Emitter-Base Breakdown Voltage (ig = 10 pAde, Io = 0) BV ERO 5 Vdc Collector Cutoff Current (Van = 60 Vdc, I = 0) = 60 Vde, =o, T,= 100C) Von = 100 Vdc, i = 0) (Vop = 100 Vde, 1, = 0, T, = 100C) (Voz 2N4409 2N4409 2N4410 2N4410 Topo 0.01 1.0 0.01 1.0 uAde Emitter Cutoff Current (Vee = 4 Vdc, Io = 0) EBO 0.1 uAdc ON CHARACTERISTICS DC Current Gain Mp = 1 mAdc, Vor = 1 Vdc) (Ig = 10 mAdc, Vo, = 1 Vde) FE 60 60 400 Collector- Emitter Saturation Voltage (Ig = 1 mAdc, i, = 0.1 mAdc) VoKR(sat) 0.2 Vdc Base- Emitter Saturation Voltage (I, = 1 mAdc, I, 70.4 mAdc) VB E(sat) 0.8 Vde Base- Emitter On Voltage (I, = 1 mAde, Vo, = 5 Vde) VB R(on) 0.8 Vdc 5-45bre, CURRENT GAIN SATURATION VOLTAGES (VOLTS) levo, COLLECTOR CUTOFF CURRENT (nA) 2N4409, 2N4410 (continued) DYNAMIC CHARACTERISTICS Economy Transistors Current-Gain Bandwidth Product fp MHz (I, = 10 mAdc, V,,, = 10 Vde, f = 30 MHz) 60 | 300 Collector-Base Capacitance Co pF Von = 10 Vdc, I,, = 0, f = 100 kHz, emitter guarded) {12 Emitter-Base Capacitance Cor pF Var = 0,5 Vde, I, = 0, { = 100 kHz, collector guarded) | 50 TYPICAL DC CHARACTERISTICS 3 3 0.1 0.2 0.3 05 07 10 FIGURE 2 SATURATION VOLTAGES Vee(ur) 01 02 05 10 20 50 10 20 be, COLLECTOR CURRENT (mA) FIGURE 4 CUTOFF CURRENT "25 50 75 100 T,, JUNCTION TEMPERATURE (C) FIGURE 1 CURRENT GAIN 2.0 3.0 5.0 7.0 10 20 30 50 70 100 le, COLLECTOR CURRENT (ma) FIGURE 3 TEMPERATURE COEFFICIENTS 10 o COEFFICIENTS (my/C) 100 02 05 #10 20 0 8620 50-100 ic, COLLECTOR CURRENT (mA) FIGURE 5 TYPICAL NIXIE DRIVER APPLICATION +B* (370 to 300 ) 3 Ry* (10 kQ2 to 100 KQ) *VALUES DEPEND UPON TYPE OF TUBE USED. Trademark of Burroughs Corp. 125 5-46