BC856A BC858C
Document number: DS11207 Rev. 26 - 2
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BC856A BC858C
PNP SMALL SIGNAL TRANSISTOR IN SOT23
Features
Ideally Suited for Automatic Insertion
Complementary NPN Types: BC846 BC848
For Switching and AF Amplifier Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen- and Antimony-Free. "Green" Device (Note 3)
For automotive applications requiring specific change control
(i.e.: parts qualified to AEC-Q100/101/200
, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
https://www.diodes.com/products/automotive/automotive-
products/.
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
https://www.diodes.com/quality/product-definitions/
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
Ordering Information (Note 4)
Product Compliance Marking
Reel Size
(Inches)
Quantity per Reel
BC856A-7-F
Standard
7
3,000
BC856B-7-F
Standard
7
3,000
BC856B-13-F
Standard
13
10,000
BC857A-7-F
Standard
7
3,000
BC857B-7-F
Standard
7
3,000
BC857B-13-F
Standard
13
10,000
BC857C-7-F
Standard
7
3,000
BC857C-13-F
Standard
13
10,000
BC858A-7-F
Standard
7
3,000
BC858B-7-F
Standard
7
3,000
BC858C-7-F
Standard
7
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
C
E
B
Top View
SOT23
Device Symbol
Top View
Pin-Out
BC856A BC858C
Document number: DS11207 Rev. 26 - 2
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December 2020
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BC856A BC858C
Marking Information
Date Code Key
Year
2019
2020
2021
2022
2023
2024
2025
2026
Code
G
H
I
J
K
L
M
N
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Absolute Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
BC856
VCBO
-80
V
BC857
-50
BC858
-30
Collector-Emitter Voltage
BC856
VCEO
-65
V
BC857
-45
BC858
-30
Emitter-Base Voltage
VEBO
-5.0 V
Continuous Collector Current
IC
-100
mA
Peak Collector Current (Single Pulse)
ICM
-200
mA
Peak Emitter Current
IEM
-200
mA
Peak Base Current (Single Pulse)
IBM
-200
mA
Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
310
mW
(Note 6)
350
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
403
°C/W
(Note 6)
357
Thermal Resistance, Junction to Leads
(Note 7)
RθJL
350
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 15mm × 15mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the leads).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
xxx
YM
xxx = Product Type Marking Code
(Please see Ordering Information)
YM = Date Code Marking
Y or Y = Year (ex: G = 2019)
M or M = Month (ex: 9 = September)
BC856A BC858C
Document number: DS11207 Rev. 26 - 2
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BC856A BC858C
Thermal Characteristics and Derating Information
025 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 110 100 1k
0
50
100
150
200
250
300
350
400
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
10m 100m 110 100 1k
0.1
1
10
Single Pulse. T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
Thermal Resistance (°C/W)
Temperature (°C)
TA = 2C
µ
BC856A BC858C
Document number: DS11207 Rev. 26 - 2
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BC856A BC858C
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BC856
BVCBO
-80
V IC = -10µA
BC857
-50
BC858
-30
Collector-Emitter Breakdown Voltage
(Note 9)
BC856
BVCEO
-65
V IC = -10mA
BC857
-45
BC858
-30
Emitter-Base Breakdown Voltage
BV
EBO
-5
V
I
E
= -1µA
Collector Cutoff Current ICBO
-15
nA
VCB = -30V
-4 µA
VCB = -30V, TJ = +150°C
Collector Emitter Cutoff Current
BC856
ICES
-15
nA
VCE = -80V
BC857 -15
VCE = -50V
BC858
-15
VCE = -30V
Emitter-Base Cutoff Current
IEBO
-100
nA
VEB = -5V
Small Signal Current Gain
BC856A / BC857A / BC858A
hfe
200
IC = -2.0mA, VCE = -5V
f = 1.0kHz
BC856B / BC857B / BC858B
330
BC857C / BC858C
600
Input Impedance
BC856A / BC857A / BC858A
hie
2.7
kΩ
BC856B / BC857B / BC858B
4.5
BC857C / BC858C
8.7
Output Admittance
BC856A / BC857A / BC858A
hoe
18
µS
BC856B / BC857B / BC858B
30
BC857C / BC858C
60
Reverse Voltage Transfer
Ratio
BC856A / BC857A / BC858A
hre
1.5x10-4
BC856B / BC857B / BC858B
2x10-4
BC857C / BC858C
3x10-4
DC Current Gain (Note 9)
BC856A / BC857A / BC858A
hFE
125
180
250
IC = -2.0mA, VCE = -5V
BC856B / BC857B / BC858B
220
290
475
BC857C / BC858C 420 520 800
Collector-Emitter Saturation Voltage (Note 9) VCE(sat) -75 -300 mV I
C
= -10mA, I
B
= -0.5mA
-250
-650
IC = -100mA, IB = -5.0mA
Base-Emitter Turn-On Voltage (Note 9) VBE(on) -600 -650 -750 mV
IC = -2mA, VCE = -5V
-820
IC = -10mA, VCE = -5V
Base-Emitter Saturation Voltage (Note 9) VBE(sat) -700 mV
IC = -10mA, IB = -0.5mA
-850 -1100
IC = -100mA, IB = -5mA
Output Capacitance
Cobo
3
pF
VCB = -10V, f = 1.0MHz
Transition Frequency fT 100 200 MHz VCE = -5V, IC = -10mA,
f = 100MHz
Noise Figure NF 2 10 dB
VCE = -5V, IC = -200µA
RS = 2k, f = 1kHz
f = 200Hz
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
BC856A BC858C
Document number: DS11207 Rev. 26 - 2
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BC856A BC858C
Typical Electrical Characteristics (BC856B) (@ TA = +25°C, unless otherwise specified.)
1
10
100
1,000
110 100 1,000
V = 5V
CE
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
1
0.1 10 100 1,000
V, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Figure 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B= 10
10
100
1,000
110 100
f , GAIN-BANDWIDTH PRODUCT (MHz)
t
I , COLLECTOR CURRENT (mA)
Figure 3 Gain-Bandwidth Product vs Collector Current
C
V = 5V
CE
TA = 150°C
TA = 25°C
TA = -50°C
TA = 150°C
TA = 25°C
TA = -50°C
VCE(sat), COLLECTOR-EMITTER
V
CE(sat) V
I
C
VCE(sat) (V)
hFE V IC
fT V IC
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
I
C,
COLLECTOR CURRENT (mA)
BC856A BC858C
Document number: DS11207 Rev. 26 - 2
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BC856A BC858C
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
--
All Dimensions in mm
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
X
Y
Y1 C
X1
BC856A BC858C
Document number: DS11207 Rev. 26 - 2
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BC856A BC858C
IMPORTANT NOTICE
1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED,
WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED
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INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes
products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended
applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well
as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality
control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with
their applications.
3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
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(https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
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the applicable laws and regulations, as well as any unintended or unauthorized application.
7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
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modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
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