DP350T05
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (DN350T05)
Ideal for Medium Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS
Compliant "Green" Device (Notes 2, 3 and 4)
Qualified to AEC-Q101 Standards for High
Reliability
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Finish annealed over
Alloy 42 leadframe. Solderable per MIL-STD-202,
Method 208
Marking Information: K3U - See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α 0° 8°
All Dimensions in mm
E
B
C
A
E
JL
TOP VIEW
M
BC
H
GD
K
C
BE
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol DP350T05 Unit
Collector-Base Voltage VCBO -350 V
Collector-Emitter Voltage VCEO -350 V
Emitter-Base Voltage VEBO -5.0 V
Continuous Collector Current (Note 1) IC -500 mA
Power Dissipation (Note 1) PD 300 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 417 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product is manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.
DS30624 Rev. 7 - 2 1 of 4
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DP350T05
© Diodes Incorporated
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
DS30624 Rev. 7 - 2 2 of 4
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DP350T05
© Diodes Incorporated
Collector-Base Breakdown Voltage V(BR)CBO -350 V IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -350 V IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 V IE = -10μA, IC = 0
Collector Cutoff Current ICBO -50 nA VCB = -200V, IE = 0
Collector Cutoff Current IEBO -50 nA VCE = -3.0V, IC = 0
ON CHARACTERISTICS (Note 5)
DC Current Gain hFE
20
30
30
20
15
200
200
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -30mA, VCE = -10V
IC = -50mA, VCE = -10V
IC = -100mA, VCE = -10V
Collector-Emitter Saturation Voltage VCE(SAT)
-0.30
-0.35
-0.50
-1.0
V
IC = -10mA, IB = -1.0mA
IC = -20mA, IB = -2.0mA
IC = -30mA, IB = -3.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage VBE(SAT)
-0.75
-0.85
-0.90 V IC = -10mA, IB = -1.0mA
IC = -20mA, IB = -2.0mA
IC = -30mA, IB = -3.0mA
Base-Emitter On Voltage VBE(ON) -2.0 V
IC = -100mA, VCE = -10V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo 7.0 pF VCB = -20V, f = 1.0MHz, IE = 0
Transition Frequency fT 50 MHz VCE = -10V, IC = -20mA
Notes: 5. Short duration pulse test used to minimize self-heating effect.
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA T URE (°C)
Fig . 1 , M ax Power D issip at ion vs. Ambi ent Temperat ur e
A
150
200
250
300
350
0
-1 -10 -100
I , COLLECTOR CURRENT (mA)
Fig. 2,
C
DC Current Gain vs. Collector Current
0
-0.01 -100-90
-80-70
-60
-50
-10 -20 -30 -40
-1
-0.1
I , COLLECTOR CURRENT (mA)
Fig. 3, Collector-Emitter Saturation Voltage
vs. Col lector Cu r re nt
C
V,
C
O
LLE
C
T
O
R
EMI
T
T
E
R
SATURATION VOL TAGE (V)
CE(SAT)
-10 -100
I , COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Saturation Voltage
vs. Collector Current
C
V , BASE EMI
T
T
E
R
SATURATION VOLTAGE (V)
BE(SAT)
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.9
-0.8
-0.7
-0.6
-1
-1 -10 -100
V , BASE EMI
T
T
E
R
O
N V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 5,
C
Base-Em it ter On Vol tage vs. Collector Current
0
60
50
40
30
70
1
10
20
C
,
C
A
P
A
C
I
T
A
N
C
E (p
F
)
V , REVERSE VOLT AGE (V)
Fig. 6, Capacitance vs. Reverse Voltage
R
Ordering Information (Note 6)
DS30624 Rev. 7 - 2 3 of 4
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DP350T05
© Diodes Incorporated
Device Packaging Shipping
SOT-23 3000/Tape & Reel
DP350T05-7
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K3U = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
K3U
YM
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012
Code S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DS30624 Rev. 7 - 2 4 of 4
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DP350T05
© Diodes Incorporated
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.