Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Fast Switching Characteristic BVDSS 95V
▼ Single Drive Requirement RDS(ON) 110mΩ
▼ Surface Mount Package ID3A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=100℃A
IDM A
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a 62.5 ℃/W
Data and specifications subject to change without notice
-55 to 150
Maximum Thermal Resistance, Junction-ambient3
Thermal Data Parameter
Gate-Source Voltage ±20
Continuous Drain Current3, VGS @ 10V 3
Continuous Drain Current3, VGS @ 10V 2.3
Pulsed Drain Current1
1
20
Operating Junction Temperature Range -55 to 150
Storage Temperature Range
Total Power Dissipation 2
200803063
AP9997GM
RoHS-compliant Product
Parameter Rating
Drain-Source Voltage 95
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance
and cost-effectiveness.
S1G1S2G2
D1 D1D2 D2
SO-8
G2
D2
S2
G1
D1
S1
The SO-8 package is widely preferred for commercial
-industrial surface mount applications and suited for
low voltage applications such as DC/DC converters.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 95 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=3A - - 110 mΩ
VGS=4.5V, ID=2A - - 165 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=3A - 3 - S
IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA
Drain-Source Leakage Current (Tj=70oC) VDS=80V ,VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS= ±20V - - ±100 nA
QgTotal Gate Charge2ID=3A - 14 22 nC
Qgs Gate-Source Charge VDS=80V - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 5.5 - nC
td(on) Turn-on Delay Time2VDS=50V - 4.5 - ns
trRise Time ID=1A - 7 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 18 - ns
tfFall Time RD=50Ω-6-
ns
Ciss Input Capacitance VGS=0V - 450 720 pF
Coss Output Capacitance VDS=25V - 65 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=1.5A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=3A, VGS=0V, - 39 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 62 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP9997GM
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
AP9997GM
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
4
8
12
16
20
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC10V
7.0V
5.0V
4.5V
VG=3.0V
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj ,Junction Temperature ( oC)
VGS(th) (V)
0
4
8
12
16
20
0246810
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC
VG=3.0V
10V
7.0V
5.0V
4.5V
0
2
4
6
8
10
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj=25oCTj=150oC
0.4
0.8
1.2
1.6
2.0
2.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
VG=10V
ID=3A
70
90
110
130
150
246810
VGS , Gate-to-Source Voltage (V)
RDSON (m
Ω
)
ID=2A
TA=25oC
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
AP9997GM
10
100
1000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Crss
Coss
0
2
4
6
8
10
12
048121620
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =80V
I
D=3A
Q
VG
10V
QGS QGD
QG
Charge
0.001
0.01
0.1
1
10
100
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthja)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
tT
Rthja = 135℃/W
0.02
0
1
2
3
4
5
0123456
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oCTj=25 oC
VDS =5V
Package Outline : SO-8
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
A1 0.10 0.18 0.25
B 0.33 0.41 0.51
C 0.19 0.22 0.25
D 4.80 4.90 5.00
E1 3.80 3.90 4.00
E 5.80 6.15 6.50
L 0.38 0.71 1.27
θ0 4.00 8.00
e
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
1.27 TYP
ADVANCED POWER ELECTRONICS CORP.
c
DETAIL A
A1
A
9997G
M
YWWSSS
Package Code
Part Numbe
r
DETAIL A Lθ
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
e
B
134
5678
2
D
E1 E
meet Rohs requirement
5
