SCHOTTKY RECTIFIER 3 Amp
15MQ040N
Bulletin PD-20517 rev. G 03/03
1
www.irf.com
SMA
Major Ratings and Characteristics
IFDC 3 A
VRRM 40 V
IFSM @ tp = 5 µs sine 330 A
VF@ 2Apk, TJ=125°C 0.43 V
TJrange - 40 to 150 °C
Characteristics 15MQ040N Units
Description/ Features
The 15MQ040N Schottky rectifier is designed to be used for
low-power applications where a reverse voltage of 40 volts is
ancountered and surface mountable is required.
Applications
Switching power supplies
Meter protection
Reverse protection for power input to PC board circuits
Battery isolation and charging
Low threshold voltage diode
Free-wheeling or by-pass diode
Low voltage clamp
Features
Surface mountable
Extremely low forward voltage
Improved reverse blocking voltage capability relative
to other similar size Schottky
Compact size
Outline SMA Similar to D-64
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
2.50 (.098)
2.90 (.114)
4.00 (.157)
4.60 (.181)
1.40 (.055)
1.60 (.062)
.152 (.006)
.305 (.012)
2.00 (.078)
2.44 (.096)
0.76 (.030)
1.52 (.060)
.103 (.004)
.203 (.008)
4.80 (.188)
5.28 (.208)
2.10 MAX.
(.085 M AX. )
5.53 (.218)
1.27 MIN.
(.050 M IN.)
1.47 MIN.
(.058 MI N.)
SOLD ERING PAD
CATHODE ANODE
1 2
12
POLARITY PART NUMBER
Device Marking: IR3F
15MQ040N
Bulletin PD-20517 rev. G 03/03
2www.irf.com
Part number 15MQ040N
VRMax. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 40
Voltage Ratings
VFM Max. Forward Voltage Drop (1) 0.42 V @ 1A
* See Fig. 1 0.49 V @ 2A
0.34 V @ 1A
0.43 V @ 2A
IRM Max. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
* See Fig. 2 20 mA TJ = 125 °C
VF(TO) Threshold Voltage 0.26 V TJ = TJ max.
rtForward Slope Resistance 64.6 mΩ
CTTypical Junction Capacitance 134 pF VR = 10VDC, TJ = 25°C, test signal = 1Mhz
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs (Rated VR)
TJ = 25 °C
TJ = 125 °C
VR = rated VR
Electrical Specifications
Parameters 15MQ Units Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJMax. Junction Temperature Range (*) -40 to 150 °C
Tstg Max. Storage Temperature Range -40 to 150 °C
RthJA Max. Thermal Resistance Junction 80 °C/W DC operation
to Ambient
wt Approximate Weight 0.07(0.002) g (oz.)
Case Style SMA Similar D-64
Device Marking IR3F
Thermal-Mechanical Specifications
Parameters 15MQ Units Conditions
Absolute Maximum Ratings
IF(AV) Max. Average Forward Current 2.1 A 50% duty cycle @ TL = 105 °C, rectangular wave form.
* See Fig. 4 On PC board 9mm2 island(.013mm thick copper pad area)
IFSM Max. Peak One Cycle Non-Repetitive 330 5µs Sine or 3µs Rect. pulse
Surge Current * See Fig. 6 140 10ms Sine or 6ms Rect. pulse
EAS Non-Repetitive Avalanche Energy 6.0 mJ TJ = 25 °C, IAS = 1A, L = 12mH
IAR Repetitive Avalanche Current 1.0 A
Parameters 15MQ Units Conditions
AFollowing any rated
load condition and
with rated VRRM applied
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)
15MQ040N
Bulletin PD-20517 rev. G 03/03
www.irf.com 3
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0.1
1
10
0.20.30.40.50.60.70.80.9
Instantaneou s Forwar d Current - I ( A )
T = 150°C
T = 125°C
T = 2 5 °C
J
J
J
F
FM
For ward Voltage Drop - V (V)
0.001
0.01
0.1
1
10
100
0 5 10 15 20 25 30 35 40
R
R
125°C
100°C
75°C
50°C
25°C
Reverse Curr ent - I (mA)
T = 150°C
J
Reverse Voltage - V (V)
10
100
1000
0 5 10 15 20 25 30 35 40 45
R
T
Juncti on Capaci tance - C (pF)
T = 25°C
J
Rever se Voltage - V (V )
15MQ040N
Bulletin PD-20517 rev. G 03/03
4www.irf.com
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
100
1000
10 100 1000 10000
FSM
p
At Any Rated Load Conditi on
And Wi th Rated V Applied
Follo w in g Surg e
RRM
Square W ave Pulse Dur ati on - t (micr osec)
Non-Repetitive Surge Current - I (A)
30
40
50
60
70
80
90
100
110
120
130
140
150
00.511.522.53
DC
F(AV)
see note (2)
A llowable C ase Tem pe rature - ( °C )
Square wave (D = 0.50)
80 % Rated V applied
R
Aver age Forward Current - I (A)
D = 0. 20
D = 0. 25
D = 0. 33
D = 0. 50
D = 0. 75
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
00.511.522.53
DC
Average Po we r Lo ss - (Watts)
F(AV)
RMS Lim it
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Aver age Forward Current - I (A)
15MQ040N
Bulletin PD-20517 rev. G 03/03
www.irf.com 5
IR LOG O
YEAR
CURRENT
IR3F VOLTAGE
YYWWX
WEEK
SITE ID
Tape & Reel Information
Marking & Identification Ordering Information
15MQ SERIES - TAPE AND REEL
WHEN ORDERING, INDICATE THE PART NUMBER
AND THE QUANTITY ( IN MULTIPLES OF 7500
PIECES).
EXAMPLE: 15MQ040NTR - 15000 PIECES
15MQ SERIES - BULK QUANTITIES
WHEN ORDERING, INDICATE THE PART NUMBER
AND THE QUANTITY ( IN MULTIPLES OF 1000
PIECES).
EXAMPLE: 15MQ040N - 2000 PIECES
Dimensions in millimeters and (inches)
NOTE:
1. OUTLINE CONFORMS TO EIA-481.
Each device has 2 rows for identification. The first row
designates the device as manufactured by International
Rectifier as indicated by the letters "IR", and the Part
Number (indicates the current and the voltage rating).
The second row indicates the year, the week of
manufacturing and the Site ID.
15MQ040N
Bulletin PD-20517 rev. G 03/03
6www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
