308 Constitution Drive
Menlo Park, CA 94025-1164
Phone: 800-227-4856
www.circuitprotection.com
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
Raychem Circuit Protection Products
PRODUCT: ZEN056V130 A24LS
DOCUMENT: SCD 26730
REV LETTER: E
REV DATE: OCTOBER 27, 2008
PAGE NO.: 1 OF 8
Specification Status: Released
GENERAL DESCRIPTION
Tyco Electronics PolyZen devices are
polymer enhanced, precision Zener diode
micro-assemblies. They offer resettable
protection against multi-Watt fault events
without the need for multi-Watt heat sinks.
The Zener diode used for voltage
clamping in a PolyZen micro-assembly
was selected due to its relatively flat
voltage vs current response. This help s improve output
voltage clamping, even when input voltage is high and diode
currents are large.
An advanced feature of the PolyZen micro-assembly is that
the Zener diode is thermally coupled to a resistively non-
linear, polymer PTC (positive temperature coefficient) layer.
This PTC layer is fully integrated into the device, and is
electrically in series between VIN and the diode clamped VOUT.
This advanced PTC layer responds to either extended diode
heating or overcurrent events by transitioning from a low to
high resistance state, al so known as ”tripping”. A tripped PTC
will limit current and generate voltage drop. It helps to protect
both the Zener diode and the follow o n electronics and
effectively increases the diode’ s power handling capability.
The polymer enhanced Zener diode hel ps protect sensitive
portable electronics from damage caused by inductive
voltage spikes, voltage transients, incorrect powe r supplies
and reverse bias. These device s are particularly suitable for
portable electronics a nd other low-power DC d evices.
BENEFITS
• Stable Zener diode helps shield downstream
electronics from overvoltage and reverse bias
• Trip events shut out overvoltage and reverse
bias sources
• Analog nature of trip events minimizes
upstream inductive spikes
• Minimal power dissipation requirements
• Single component placement
FEATURES
• Overvoltage transient suppression
• Stable VZ vs fault current
• Time delayed, overvoltage trip
• Time delayed, reverse bias trip
• Multi-Watt power handling capability
• Integrated device construct ion
• RoHS Compliant
TARGET APPLICATIONS
• DC power port protection in portabl e
electronics
• DC power port protection for sy stems using
barrel jacks for power input
• Internal overvoltage & transient suppression
• DC output voltage regulation
TYPICAL APPLICATION BLOCK DIAGRAM
GND
VIN VOUT
Regulated
Output RLoad
Protected downstream
electronics
1
2
3
+
Power Supply
(External or Internal) PolyZen Protected Electronics
PolyZen
Device
GND
VIN VOUT
Regulated
Output RLoad
Protected downstream
electronics
1
2
3
+
Power Supply
(External or Internal) PolyZen Protected Electronics
GND
VIN VOUT
Regulated
Output RLoad
Protected downstream
electronics
1
2
3
+
Power Supply
(External or Internal) PolyZen Protected Electronics
PolyZen
Device
NOT the LATEST
REVISION
SUPERSEDED
308 Constitution Drive
Menlo Park, CA 94025-1164
Phone: 800-227-4856
www.circuitprotection.com
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
Raychem Circuit Protection Products
PRODUCT: ZEN056V130 A24LS
DOCUMENT: SCD 26730
REV LETTER: E
REV DATE: OCTOBER 27, 2008
PAGE NO.: 2 OF 8
CONFIGURATION INFORMATION
Pin Configuration (Top View) Recommended Pad Dimensions
2
3
V
IN
GND
V
OUT
1
PIN DESCRIPTION
Pin Number Pin Name Pin Function
1 VIN VIN. Protected input to Zener diode.
2 GND
GND
3 VOUT VOUT. Zener regulated voltage output
BLOCK DIAGRAM
DEFINITION of TERMS
IPTC Current flowing through the PTC po rtion of the
circuit
IFLT RMS fault current flowing through the diode
IOUT Current flowing out the VOUT pin of the device
Trip Event A condition where the PTC transitions to a high
resistance state, thereby significantly limiting IPTC
and related currents, and significantly increasing
the voltage drop between VIN and VOUT.
Trip
Endurance Time the PTC portion of the device remains both
powered and in a tripped state.
2.21 mm
(0.087”)
0.94 mm
(0.037”)
0.33 mm
(0.013”)
0.56 mm
(0.022”) 2.88 mm
(0.1135”) 0.56 mm
(0.022”)
0.94 mm
(0.037”)
2.21 mm
(0.087”)
0.94 mm
(0.037”)
0.33 mm
(0.013”)
0.56 mm
(0.022”) 2.88 mm
(0.1135”) 0.56 mm
(0.022”)
0.94 mm
(0.037”)
GND
V
IN
V
OUT
Zener
Diode
Polymer PTC
GND
V
IN
V
OUT
Zener
Diode
Polymer PTC
GND
I
FLT
V
IN
I
OUT
I
PTC
V
OUT
GND
I
FLT
V
IN
I
OUT
I
PTC
V
OUT
308 Constitution Drive
Menlo Park, CA 94025-1164
Phone: 800-227-4856
www.circuitprotection.com
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
Raychem Circuit Protection Products
PRODUCT: ZEN056V130 A24LS
DOCUMENT: SCD 26730
REV LETTER: E
REV DATE: OCTOBER 27, 2008
PAGE NO.: 3 OF 8
GENERAL SPECIFICATIONS
Operating Temperature -40º to +85ºC
Storage Temperature -40º to +85ºC
ELECTRICAL CHARACTERISTICS1-3, 11 (Typical unless otherwise specified)
VInt Max8
(V)
IFLT Max9 Tripped Pow e r
Dissipation10
Max
VZ4
(V)
Leakage Current
Min Typ Max
Izt4
(A)
IHOLD5
@20ºC
(A)
Test
Voltage
Max
Current
(mA)
R Typ6
(Ohms) R1Max7
(Ohms) VINT
Max
(V)
Test
Current
(A)
IFLT Max
(A)
Test
Voltage
(V)
Value
(W)
Test
Voltage
(V)
5.45 5.6 5.75 0.1 1.3 5.25 10 0.12 0.16 24V 3A +10
-40 +24
-16V 1.0 24
Note 1: Electrical characteristics determined at 25ºC unless otherwise specified.
Note 2: This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the device
and may affect performance to specifications. Performance impact will depen d on multiple factors including, but not limited to,
voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specif ic to your application contact Tyco
Electronics Circuit Protection directly.
Note 3: Specifications developed using 1.0 ounce 0.045” wide copper traces on d edicated FR4 test boards. Performance in your
application may vary.
Note 4: Izt is the current at which Vz is measured (VZ = VOUT). Additional VZ values are available on request.
Note 5: IHOLD : Maximum steady state IPTC (current entering or exiting the VIN pin of the device) that will not generate a trip eve nt at the
specified temperature. Specification assumes IFLT (current flowing through the Zener diod e) is sufficiently low so as to prevent
the diode from acting as a heat source. Testing is conducted with an “open” Zener.
Note 6: R Typ: Resistance between VIN and VOUT pins durin g normal operation at room temperatur e.
Note 7: R1Max: The maximum resistance between VIN and VOUT pins at room temperature, one hour after 1st trip or after reflow
soldering.
Note 8: VINT Max: VINT Max relates to the voltage across the PPTC portion of the PolyZen device (VIN-VOUT). VINT Max is defined as
the voltage (VIN-VOUT) at which typical qualification d evices (98% devices, 95% confidence) survived at least 100 trip cycles
and 24hours trip endurance at the specified voltage (VIN-VOUT) and current (IPTC). VINT Max testing is conducted using a
"shorted" load (VOUT = 0V). VINT Max is a survivability rating, not a performance rating.
Note 9: IFLT Max: IFLT Max relates to the stead state current flowing through the diode portion of th e PolyZen device in a fault
condition, prior to a trip event. IFLT Max is defined as the current at which typical qualificati on devices (12 parts per lot from 3
lots) survived 100 test cycles. RMS fault currents above IFLT Max may permanently damage the diode portion of the Poly Zen
device. Testing is conducted wit h NO load conn ected to VOUT, such that IOUT = 0. “Test voltage” is defined as the volta ge
between VIN to GND and includes the PolyZen Diode drop. Specification is dependent on the direction of current flow through
the diode. IFLT Max is a survivability rating, not a performance rating.
Note 10: The power dissipated by the device when in the “tripped” state, as measured on TE test boards (see note 3).
Note 11: Specifications based on limited qua lification data and subject to change.
MECHANICAL DIMENSIONS
Min Typical Max
Length L 3.85 mm
(0.152”) 4 mm
(0.16”) 4.15 mm
(0.163")
Width W
3.85 mm
(0.152”) 4 mm
(0.16”) 4.15 mm
(0.163")
Height H 1.4mm
(0.055”) 1.7 mm
(0.067”) 2.0 mm
(0.081”)
Length
Diode Ld -
3.0 mm
(0.118”) -
Height
Diode Hd - 1.0 mm
(0.039”) -
Offset O1 - 0.6 mm
(0.024”) -
Offset O2 - 0.7 mm
(0.028”) -
308 Constitution Drive
Menlo Park, CA 94025-1164
Phone: 800-227-4856
www.circuitprotection.com
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
Raychem Circuit Protection Products
PRODUCT: ZEN056V130 A24LS
DOCUMENT: SCD 26730
REV LETTER: E
REV DATE: OCTOBER 27, 2008
PAGE NO.: 4 OF 8
SOLDER REFLOW RECOMMENDATIONS:
Classification Refl o w Profil es
Profile Feature Pb-Free Assembly
Average Ramp-Up Rate (Tsmax to Tp) 3° C/second max.
Preheat
• Temperature Min (Tsmin) 150 °C
• Temperature Max (Tsmax) 200 °C
• Time (tsmin to tsmax) 60-180 seconds
Time maintained above:
• Temperature (TL) 217 °C
• Time (tL) 60-150 seconds
Peak/Classification Temperatu re
(Tp) 260 °C
Time within 5 °C of actual Peak
Temperature (tp) 20-40 seconds
Ramp-Down Rat e 6 °C/second max.
Time 25 °C to Peak Temperature 8 minutes max.
308 Constitution Drive
Menlo Park, CA 94025-1164
Phone: 800-227-4856
www.circuitprotection.com
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
Raychem Circuit Protection Products
PRODUCT: ZEN056V130 A24LS
DOCUMENT: SCD 26730
REV LETTER: E
REV DATE: OCTOBER 27, 2008
PAGE NO.: 5 OF 8
PACKAGING
Packaging Tape & Reel Standard Box
ZENXXXVXXXAXXLS 3,000 15,000
Reel Dimensions for PolyZen Devices
Amax = 330
Nmin = 102
W1 = 8.4
W2 = 11.1
Taped Component Dimensions for PolyZen Devices
Matte Finish These Area
A
max
N
min
Matte Finish These Area
A
max
N
min
308 Constitution Drive
Menlo Park, CA 94025-1164
Phone: 800-227-4856
www.circuitprotection.com
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
Raychem Circuit Protection Products
PRODUCT: ZEN056V130 A24LS
DOCUMENT: SCD 26730
REV LETTER: E
REV DATE: OCTOBER 27, 2008
PAGE NO.: 6 OF 8
TYPICAL CHARACTERISTICS
Typical Fault Response: ZEN056V130A 2 4LS
20V, 3.5A Current Limited Source (IOUT = 0)
0
2
4
6
8
10
12
14
16
18
20
-0.02 0.02 0.06 0.10 0.14 0.18
Time (s)
V (V) or I (A)
Vin (V)
V out (V )
I F L T (A)
Pul s e IV
(300uSec P ulse)
2
3
4
5
6
7
8
0.00001
0.0001
0.001
0.01
0.1
1
Current: I
FLT
(A )
V ol t age: V
OUT
(V )
ZEN056VxxxAxxLS
Pul s e IV
(300uSec Pulse)
-10
-5
0
5
10
-202468
V ol t age: V
OUT
(V )
Current: I
FLT
(A )
ZEN056VxxxAxxLS
V
OUT
Peak Vs I
FLT
RM S (I
OUT
= 0)
5
5.5
6
6.5
7
7.5
8
0246810
I
FLT
RM S(A)
V
OUT
Peak (V)
ZEN056V130A24LS
Time to Trip Vs I
FLT
RM S (I
OUT
= 0)
0.01
0.1
1
10
100
0246810
I
FLT
RM S (A)
Time To Trip (S ec
)
ZEN056V130A24LS
308 Constitution Drive
Menlo Park, CA 94025-1164
Phone: 800-227-4856
www.circuitprotection.com
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
Raychem Circuit Protection Products
PRODUCT: ZEN056V130 A24LS
DOCUMENT: SCD 26730
REV LETTER: E
REV DATE: OCTOBER 27, 2008
PAGE NO.: 7 OF 8
V
OUT
Peak Vs I
FLT
(I
OUT
= 0)
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
-50 -40 -30 -20 -10 0
I
FLT
RM S(A )
V
OUT
(V )
ZENxxxV130A24LS
Time to Trip Vs I
FLT
RM S (I
OUT
= 0)
0.001
0.01
0.1
1
-50 -40 -30 -20 -10 0
I
FLT
RM S (A )
Time To Trip (Sec
)
ZENxxxV130A24LS
Tem per at ur e Ef fect on I
Hold
(I
FLT
= 0)
0.00
0.50
1.00
1.50
2.00
2.50
-40-20020406080100
Ambient Tem per at ure ( C)
I
Hold
(A)
ZENxxxV130A24LS
Time to Trip Vs I
PTC
RM S (I
FLT
= 0)
0.001
0.01
0.1
1
10
0 10203040
I
PTC
RM S (A )
Time To Trip (Sec
)
ZENxxxV130A24LS
Tem perat ur e Eff ect on R Typ
0.00
0.10
0.20
0.30
0.40
20 40 60 80
Ambient Temper atu re (C)
RTyp (O hm s)
ZENxxxV130A24LS
308 Constitution Drive
Menlo Park, CA 94025-1164
Phone: 800-227-4856
www.circuitprotection.com
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
Raychem Circuit Protection Products
PRODUCT: ZEN056V130 A24LS
DOCUMENT: SCD 26730
REV LETTER: E
REV DATE: OCTOBER 27, 2008
PAGE NO.: 8 OF 8
Materials Information
ROHS Compliant ELV Compliant Pb-Free Halogen Free*
* Halogen Free refers to: Br≤900ppm, Cl≤900ppm, Br+Cl≤1500ppm.
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of each
product for their applications. T yco Electronics Corporation assumes no responsib ility for the use of its prod uct or for any infringement
of patents or other rights of third parties resulting from the use of its product. No license is granted by im plication or other wise under
any patent or proprietary right of Tyco Electronics except the right to use such product for the purpose for which it is sold. Tyco
Electronics reserves the right to change or update, without notice, any information contained in this publication; to change, without
notice, the desi gn, construction, proc essing, or specification of any pro duct; and to discon tinue or limit pr oduction or dist ribution of any
product. This publication supersedes and replaces all information previously supplied. Without expressed or written consent by an
officer of Tyco Electronics, Tyco Electronics does not authorize the use of any of its products as components in nuclear facility
applications, aerospace, or in critical life support devices or systems. Tyco Electronics’ only obligations are those in the Tyco
Electronics Standard Terms and Conditions of Sale and in no case will Tyco Electronics be liable for any incidental, indirect, or
consequential damages arising from the sale, resale, use, or misuse of its products.
© 2006, 2008 Tyco Electronics Corporation. All rights reserved.
HF
