TS4448 RZ 150mW High Speed SMD Switching Diode Small Signal Diode 0603 A D B C FeaturesBV Designed for mounting on small surface. Extremely thin/leadless package High mounting capability,strong surage with stand, high reliability. Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code E Dimensions Mechanical Data Unit (mm) Unit (inch) Min Max Min Max Case :0603 standard package, molded plastic A 1.60 1.80 0.063 0.071 Terminal: Gold plated, solderable per MIL-STD-750, method 2026 guaranteed B 0.80 1.00 0.031 0.039 C 0.70 0.85 0.027 0.033 High temperature soldering guaranteed: 260 C/10s D Typ. 0.45 Typ. 0.018 Polarity : Indicated by cathode band E Typ. 0.70 Typ. 0.028 Weight : 0.003 gram (approximately) Ordering Information Part No. Package TS4448 RZ 0603 Packing 5K / 7" Reel Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units PD 150 mW Repetitive Peak Reverse Voltage VRRM 100 V Repetitive Peak Forward Current IFRM 300 mA IO 125 mA IFSM 2.0 A RJA 666 C/W TJ, TSTG -40 to + 125 C Power Dissipation Mean Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width= 1 Pulse Width= 8.3 msec sec 1.0 Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current (Note 2) IF= 5mA IF= 100mA VR= 20V VR= 80V Symbol Min Max Units V(BR) - 80 V VF 0.62 IR 0.72 1.00 - 25 - 100 V nA Junction Capacitance VR=0.5, f=1.0MHz CJ - 9.0 pF Reverse Recovery Time (Note3) Trr - 9 ns Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : I R=100A Notes:3. Test Condition : I F=IR=10mA, RL=100, IRR=1mA Version : D12 TS4448 RZ 150mW High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Reverse Current vs Reverse FIG 1 Typical Forward Characteristics 100.00 Reverse Current (uA) Forward Current (mA) 1000 100 Ta=25C 10 1 0.1 0.01 10.00 1.00 0.10 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 20 40 Forward Voltage (V) FIG 3 Admissible Power Disspation Curve Junction Capacitance (pF) Power Dissipation (mW) 175 150 125 100 75 50 25 0 50 75 100 100 120 140 FIG 4 Admissible Power Disspation Curve 7.2 25 80 FIG 4 Typical Junction Capacitance 200 0 60 Reverse Voltage (V) 125 150 175 6.0 4.8 3.6 2.4 1.2 0 0 2 4 6 8 10 Reverse Voltage (V) Ambient Tempeture (C) FIG 5 Forward Resistance vs. Forward Current 10000 Forward Resistance () 1000 100 10 1 0.0 0.1 1.0 10.0 100.0 Version : D12