Preliminary Technical Information IXTC220N055T TrenchMVTM Power MOSFET VDSS ID25 RDS(on) (Electrically Isolated Back Surface) = 55 V = 130 A 4.4 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M VGSM 55 55 V V Transient 20 V ID25 ILRMS IDM TC = 25C Package Current Limit, RMS TC = 25C, pulse width limited by TJM 130 75 600 A A A IAR EAS TC = 25C TC = 25C 25 500 A mJ 3 V/ns dv/dt IS IDM, di/dt 100 A/s, VDD VDSS TJ 175C, RG = 5 PD TC = 25C 150 W -55 ... +175 175 -55 ... +175 C C C 300 260 C C 2500 V 11..65/2.5..15 N/lb. 2 g TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds VISOL 50/60 Hz, t = 1 minute, IISOL < 1 mA, RMS FC Mounting force Weight Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 A 55 VGS(th) VDS = VGS, ID = 250 A 2.0 IGSS VGS = 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 25 A, Note 1 V 4.0 V 200 nA ISOPLUS220 (IXTC) E153432 G D S G = Gate S = Source Isolated back surface D = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications 5 A 250 A TJ = 150C 3.4 4.4 m DS99674(11/06) (c) 2006 IXYS CORPORATION All rights reserved IXTC220N055T Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V, ID = 60 A, Note 1 75 Ciss 120 S 7200 pF 1270 pF Crss 285 pF td(on) 36 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 62 ns td(off) RG = 5 (External) 53 ns 53 ns tf Qg(on) Qgs 158 nC 42 nC 46 nC VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd ISOPLUS220 (IXTC) Outline 1.Gate 2. Drain 3.Source Note: Bottom heatsink (Pin 4) is electrically isolated from Pins 1,2, and 3. 1.0 C/W RthJC RthCS C/W 0.25 Source-Drain Diode Characteristic Values TJ = 25C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 220 A ISM Pulse width limited by TJM 600 A VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V t rr IF = 25 A, -di/dt = 100 A/s 30 ns VR = 30 V, VGS = 0 V Notes: 1. Pulse test, t 300 s, duty cycle d 2 %; 2. Drain and Source Kelvin contacts must be located less than 5 mm from the plastic body. PRELIMINARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTC220N055T Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 220 320 VGS = 10V 9V 8V 200 180 240 140 ID - Amperes 160 I D - Amperes VGS = 10V 9V 8V 280 7V 120 6V 100 80 60 200 7V 160 6V 120 80 40 40 20 5V 5V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.5 1 1.5 2.5 3 3.5 4 4.5 Fig. 4. RDS(on) Normalized to ID = 110A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150C 200 2.2 VGS = 10V 9V 8V 7V 160 140 120 100 6V 80 5V 60 VGS = 10V 2.0 RDS(on) - Normalized 180 ID - Amperes 2 VDS - Volts VDS - Volts 1.8 1.6 I D = 220A 1.4 I D = 110A 1.2 1.0 40 0.8 20 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 -25 0 25 50 75 100 125 150 175 T J - Degrees Centigrade VDS - Volts Fig. 6. Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID = 110A Value vs. Drain Current 90 2.2 External Lead Current Limit 80 TJ = 175C 2 1.8 I D - Amperes RDS(on) - Normalized 70 1.6 VGS = 10V 15V - - - - 1.4 60 50 40 30 1.2 TJ = 25C 20 1 10 0 0.8 0 40 80 120 160 200 I D - Amperes (c) 2006 IXYS CORPORATION All rights reserved 240 280 320 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 175 IXTC220N055T Fig. 8. Transconductance Fig. 7. Input Admittance 270 180 240 160 210 140 180 120 g f s - Siemens I D - Amperes TJ = - 40C 150 120 25C 100 80 150C 60 90 TJ = 125C 25C -40C 60 40 20 30 0 0 3.5 4 4.5 5 5.5 6 0 6.5 30 60 VGS - Volts 150 180 210 240 270 Fig. 10. Gate Charge 300 10 270 9 240 8 210 7 VGS - Volts I S - Amperes 120 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 180 150 90 TJ = 150C 120 I D = 25A I G = 10mA 6 5 4 TJ = 25C 90 VDS = 27.5V 3 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 20 40 60 80 100 120 140 160 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 10,000 10.00 1,000 Z(th)JC - C / W Capacitance - PicoFarads C iss C oss 100 5 0.10 C rss f = 1 MHz 0 1.00 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse W idth - Seconds 1 10 IXTC220N055T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 75 70 RG = 5 65 VGS = 10V 70 65 VDS = 30V 60 t r - Nanoseconds t r - Nanoseconds 75 55 50 45 I D = 50A 40 TJ = 25C 60 RG = 5 55 VGS = 10V 50 VDS = 30V 45 40 35 I D = 25A 30 35 25 30 20 TJ = 125C 25 25 35 45 55 65 75 85 95 105 115 125 25 30 35 TJ - Degrees Centigrade 160 65 100 50 I D = 50A, 25A 45 60 40 63 86 61 82 59 78 57 74 55 70 53 51 62 35 30 4 6 8 10 12 14 16 18 25 35 45 RG - Ohms 84 80 td(off) - - - - t f - Nanoseconds 72 RG = 5, VGS = 10V VDS = 30V 68 54 64 52 60 50 56 52 TJ = 25C 46 48 28 32 36 95 105 115 50 125 40 44 I D - Amperes (c) 2006 IXYS CORPORATION All rights reserved 48 td(off) - - - - tf 230 TJ = 125C, V GS = 10V VDS = 30V 150 200 I D = 25A 130 170 110 140 I D = 50A 90 110 70 80 50 t d ( o f f ) - Nanoseconds 76 t d ( o f f ) - Nanoseconds 60 24 85 260 170 t f - Nanoseconds 62 48 75 190 TJ = 125C 56 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 64 tf 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 58 54 VDS = 30V 45 20 58 RG = 5, V GS = 10V 47 20 td(off) - - - - tf 49 40 66 I D = 50A, 25A t d ( o f f ) - Nanoseconds 55 t d ( o n ) - Nanoseconds 120 t f - Nanoseconds 60 V DS = 30V t r - Nanoseconds 90 I D = 25A, 50A TJ = 125C, VGS = 10V 80 50 65 td(on) - - - - tr 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 140 40 I D - Amperes 50 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_220N055T(5V) 8-29-06-A.XLS