IXTC220N055T - IXYS - Datasheet.Live

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0 V, ID = 250 μA55V

VGS(th) VDS = VGS, ID = 250 μA 2.0 4.0 V

IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA

IDSS VDS = VDSS 5μA

VGS = 0 V TJ = 150°C 250 μA

RDS(on) VGS = 10 V, ID = 25 A, Note 1 3.4 4.4 mΩ

TrenchMVTM

Power MOSFET

(Electrically Isolated Back Surface)

Preliminary Technical Information

N-Channel Enhancement Mode

Avalanche Rated

IXTC220N055T VDSS =55 V

ID25 = 130 A

RDS(on) ≤≤

≤≤

≤4.4 mΩΩ

ΩΩ

Ω

DS99674(11/06)

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 175°C55V

VDGR TJ= 25°C to 175°C; RGS = 1 MΩ55 V

VGSM Transient ± 20 V

ID25 TC= 25°C 130 A

ILRMS Package Current Limit, RMS 75 A

IDM TC= 25°C, pulse width limited by TJM 600 A

IAR TC= 25°C25A

EAS TC= 25°C 500 mJ

dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS 3 V/ns

TJ≤ 175°C, RG = 5 Ω

PDTC= 25°C 150 W

TJ-55 ... +175 °C

TJM 175 °C

Tstg -55 ... +175 °C

TL1.6 mm (0.062 in.) from case for 10 s 300 °C

TSOLD Plastic body for 10 seconds 260 °C

VISOL 50/60 Hz, t = 1 minute, IISOL < 1 mA, RMS 2500 V

FCMounting force 11..65/2.5..15 N/lb.

Weight 2g

G = Gate D = Drain

S = Source

GDS

ISOPLUS220 (IXTC)

E153432

Isolated back surface

Features

Ultra-low On Resistance

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

175 °C Operating Temperature

Advantages

Easy to mount

Space savings

High power density

Applications

Automotive

- Motor Drives

- High Side Switch

- 12V Battery

- ABS Systems

 DC/DC Converters and Off-line UPS

Primary- Side Switch

 High Current Switching

Applications

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTC220N055T

Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;

2. Drain and Source Kelvin contacts must be located less than 5 mm from

the plastic body.

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified)

Min. Typ. Max.

gfs VDS = 10 V, ID = 60 A, Note 1 75 120 S

Ciss 7200 pF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1270 pF

Crss 285 pF

td(on) 36 ns

trVGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 62 ns

td(off) RG = 5 Ω (External) 53 ns

tf53 ns

Qg(on) 158 nC

Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A 42 nC

Qgd 46 nC

RthJC 1.0°C/W

RthCS 0.25 °C/W

Source-Drain Diode Characteristic Values

TJ = 25°C unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

ISVGS = 0 V 220 A

ISM Pulse width limited by TJM 600 A

VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V

trr IF = 25 A, -di/dt = 100 A/μs30ns

VR = 30 V, VGS = 0 V

Note: Bottom heatsink (Pin 4) is

electrically isolated from Pins 1,2, and 3.

1.Gate 2. Drain

3.Source

ISOPLUS220 (IXTC) Outline

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications

offered are derived from data gathered during objective characterizations of preliminary

engineering lots; but also may yet contain some information supplied during a pre-

production design evaluation. IXYS reserves the right to change limits, test conditions,

and dimensions without notice.

IXTC220N055T

Fig. 1. Output Characteristics

@ 25ºC

0

20

40

60

80

100

120

140

160

180

200

220

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

6V

7V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

40

80

120

160

200

240

280

320

00.511.522.533.544.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

5V

7V

6V

Fig. 3. Output Characteristics

@ 150ºC

0

20

40

60

80

100

120

140

160

180

200

0 0.2 0.4 0.6 0.8 1 1.2 1.4

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

7V

6V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 110A Value

vs. Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 220A

I

D

= 110A

Fig. 5. R

DS(on)

Normalized to I

D

= 110A Value

vs. Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

0 40 80 120 160 200 240 280 320

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V - - - -

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current vs. Case Temperature

0

10

20

30

40

50

60

70

80

90

-50 -25 0 25 50 75 100 125 150 175

TC - Degrees Centigrade

ID - Amperes

External Lead Current Limit

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTC220N055T

Fig. 7. Input Admittance

0

30

60

90

120

150

180

210

240

270

3.5 4 4.5 5 5.5 6 6.5

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

-40ºC

Fig. 8. Transconductance

0

20

40

60

80

100

120

140

160

180

0 30 60 90 120 150 180 210 240 270

I

D

- Amperes

g

f s - Siemens

T

J

= - 40ºC

25ºC

150ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

30

60

90

120

150

180

210

240

270

300

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3

V

SD

- Volts

I

S

- Amperes

T

J

= 150ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 20 40 60 80 100 120 140 160

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 27.5V

I

D

= 25A

I

G

= 10mA

Fig. 11. Capacitance

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarad

s

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal

Impedance

0.01

0.10

1.00

10.00

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z(th)JC - ºC / W

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

25

30

35

40

45

50

55

60

65

70

75

25 30 35 40 45 50

I

D

- Amperes

t

r

- Nanosecond

s

R

G

= 5Ω

V

GS

= 10V

V

DS

= 30V

T

J

= 125ºC

T

J

= 25ºC

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

20

40

60

80

100

120

140

160

4 6 8 10 12 14 16 18 20

R

G

- Ohms

t

r

- Nanoseconds

30

35

40

45

50

55

60

65

t

d ( o n ) - Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 30V

I

D

= 50A, 25A

Fig. 16. Resistive Turn-off Switch-

ing Times vs. Junction Temperature

45

47

49

51

53

55

57

59

61

63

65

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanosecond

s

50

54

58

62

66

70

74

78

82

86

90

t

d ( o f f )

- Nanosecond

s

t

f

t

d(off)

- - - -

R

G

= 5Ω, V

GS

= 10V

V

DS

= 30V

I

D

= 25A, 50A

I

D

= 50A, 25A

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

46

48

50

52

54

56

58

60

62

64

24 28 32 36 40 44 48

I

D

- Amperes

t

f

- Nanoseconds

48

52

56

60

64

68

72

76

80

84

t

d ( o f f )

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 5Ω, V

GS

= 10V

V

DS

= 30V

T

J

= 125ºC

T

J

= 25ºC

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

20

25

30

35

40

45

50

55

60

65

70

75

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanosecond

s

R

G

= 5Ω

V

GS

= 10V

V

DS

= 30V

I

D

= 50A

I

D

= 25A

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

50

70

90

110

130

150

170

190

4 6 8 101214161820

R

G

- Ohms

t

f

- Nanoseconds

50

80

110

140

170

200

230

260

t

d ( o f f ) - Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 30V

I

D

= 50A

I

D

= 25A

IXTC220N055T

IXYS REF: T_220N055T(5V) 8-29-06-A.XLS