B0530WS
Taiwan Semiconductor
1 Version:J1709
200mW, 0.47V Schottky Barrier Diode
FEATURES
Designed for mounting on small surface
Low Capacitance
Low forward voltage drop
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Adapters
For switching power supply
Low stored charge
Inverter
MECHANICAL DATA
Case: SOD-323F
Molding compound meets UL 94 V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Polarity: Indicated by cathode band
Weight: 4.85 mg (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF(AV)
500
mA
VRRM
30
V
IFSM
5
A
VF at IF=500mA
0.47
V
TJ Max.
125
°C
Package
SOD-323F
Configuration
Single dice
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
SYMBOL
B0530WS
UNIT
B3
VRRM
30
V
IF(AV)
200
mA
IFSM
5
A
TJ
-65 to +125
°C
TSTG
-65 to +125
°C
THERMAL PERFORMANCE
SYMBOL
LIMIT
UNIT
RӨJA
426
°C/W
B0530WS
Taiwan Semiconductor
2 Version:J1709
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
Forward voltage per diode (1)
IF = 100mA, TJ = 25°C
VF
-
0.36
V
IF = 500mA, TJ = 25°C
0.47
Reverse current @ rated VR per
diode (2)
VR=15V TJ = 25°C
IR
-
80
μA
VR=20V TJ = 25°C
-
100
VR=30V TJ = 25°C
-
500
Junction capacitance
1 MHz, VR=0V
CJ
-
160
pF
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
PACKING
CODE
PACKING CODE
SUFFIX
PACKAGE
PACKING
B0530WS
(Note 1)
RR
G
SOD-323F
3K / 7" Reel
R9
10K / 13" Reel
Notes:
1. Whole series with green compound
EXAMPLE
EXAMPLE P/N
PART NO.
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
B0530WS RRG
B0530WS
RR
G
Green compound
B0530WS
Taiwan Semiconductor
3 Version:J1709
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 1 Typical Forward Characteristics
Fig. 2 Forward Current Derating Curve
Fig. 3 Admissible Power Dissipation Curve
Fig. 4 Typical Junction Capacitance
0.01
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
0.25
0.5
0.75
1
025 50 75 100 125 150
0
50
100
150
200
250
025 50 75 100 125 150
0
10
20
30
40
50
60
70
0 5 10 15 20 25
Io: Mean Forward Current (A)
Instantaneous Forward Voltage (V)
Power Dissipation (mW)
Ambient Temperature (oC)
Junction Capacitance (pF)
Reverse Voltage (V)
Terminal Temperature (°C)
Instantaneous Forward Current (A)
B0530WS
Taiwan Semiconductor
4 Version:J1709
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 5 Typical Reverse Characteristics
0.01
0.1
1
10
100
010 20 30
Reverse Voltage (V)
Reverse Current (mA)
B0530WS
Taiwan Semiconductor
5 Version:J1709
PACKAGE OUTLINE DIMENSION
SOD-323F
DIM.
Unit(mm)
Unit(inch)
Min
Max
Min
Max
A
1.15
1.35
0.045
0.053
B
2.30
2.80
0.091
0.110
C
0.25
0.40
0.010
0.016
D
1.60
1.80
0.063
0.071
E
0.80
1.10
0.031
0.043
F
0.05
0.25
0.002
0.010
B0530WS
Taiwan Semiconductor
6 Version:J1709
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.