MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 100 V
DC Blocking Voltage VR 100 V
RMS Reverse Voltage VR(RMS) 70 V
Average Forward Current (TL=90°C) IO 10 A
Peak Forward Surge Current, tp=8.3ms IFSM 300 A
Operating and Storage Junction Temperature TJ, Tstg -55 to +150 °C
Thermal Resistance (Note 1) ΘJL 10 °C/W
Thermal Resistance (Note 1) ΘJA 23 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR V
R=100V 15 150 μA
IR V
R=100V, TA=125°C 15 mA
BVR I
R=0.5mA 100 V
VF I
F=5.0A 530 mV
VF I
F=5.0A, TA=125°C 450 mV
VF I
F=10A 645 680 mV
VF I
F=10A, TA=125°C 540 mV
CJ V
R=4.0V, f=1.0MHz 610 pF
CTLSH10-100L
SURFACE MOUNT SILICON
LOW VF
SCHOTTKY RECTIFIER
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLSH10-100L is a
high performance 10 Amp silicon Schottky rectifier
designed for applications requiring high current, energy
efficiency and a low profile package.
MARKING CODE: CSH10100
APPLICATIONS:
• DC-DC output rectification
• Reverse polarity protection
• Power management
FEATURES:
• Low forward voltage, VF=645mV TYP @ 10A
• Low reverse leakage current, IR=15μA TYP @ 100V
• Low profile 1.2mm MAX package height
Notes: (1) FR-4 epoxy PCB with 25cm2 copper pad area.
TLM364 CASE
R1 (4-April 2013)
www.centralsemi.com
CTLSH10-100L
SURFACE MOUNT SILICON
LOW VF
SCHOTTKY RECTIFIER
TLM364 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Anode
2) Anode
3) Cathode
MARKING CODE: CSH10100
SUGGESTED MOUNTING PADS
(Dimensions in mm)
www.centralsemi.com
R1 (4-April 2013)
CTLSH10-100L
SURFACE MOUNT SILICON
LOW VF
SCHOTTKY RECTIFIER
R1 (4-April 2013)
www.centralsemi.com
TYPICAL ELECTRICAL CHARACTERISTICS
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which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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(001)
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