KSD880 KSD880 Low Frequency Power Amplifier * Complement to KSB834 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Value 60 Units V 60 V 7 V 3 A IC Collector Current IB Base Current 0.3 A PC Collector Dissipation (TC=25C) 30 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = 60V, IE = 0 Min. Typ. Max. 100 Units A 100 A IEBO Emitter Cut-off Current VEB = 7V, IC = 0 BVCEO Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 60 hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A 60 20 VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.3A 0.4 1 VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 0.5A 0.7 1 fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A 3 MHz V 300 V V Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 70 pF tON Turn ON Time 0.8 s tSTG Storage Time 1.5 s tF Fall Time VCC = 30V, IC = 1A IB1 = - IB2 = 0.2A RL = 30 0.8 s hFE Classification Classification O Y G hFE1 60 ~ 120 100 ~ 200 150 ~ 300 (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSD880 Typical Characteristics 1000 VCE = 5V IB = 90mA IB = 80mA IB = 70mA IB = 60mA 3 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 4 IB = 50mA IB = 40mA 2 IB = 30mA IB = 20mA IB = 10mA 1 100 IB = 0 10 0.01 0 0 2 4 6 8 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 2. DC current Gain 4 IC[A], COLLECTOR CURRENT VCE = 5V 3 2 1 0.2 0.4 0.6 0.8 1.0 1.2 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic 0 0.0 1 1.4 1.6 10 IC = 10 IB 1 0.1 V CE(sat) 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Collector-Emitter Saturation Voltage vs Collector Current 40 10 IC(Continous) MAX. 1s s 1m PC[W], POWER DISSIPATION 35 ms s 10 0m 10 D 1 C =2 (T C 5 VCEO MAX. ) IC[A], COLLECTOR CURRENT IC(Pulse) MAX. 30 25 20 15 10 5 0 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area (c)2000 Fairchild Semiconductor International 100 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 KSD880 Package Demensions TO-220 4.50 0.20 2.80 0.10 (3.00) +0.10 1.30 -0.05 18.95MAX. (3.70) o3.60 0.10 15.90 0.20 1.30 0.10 (8.70) (1.46) 9.20 0.20 (1.70) 9.90 0.20 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 10.08 0.30 (1.00) 13.08 0.20 ) (45 1.27 0.10 +0.10 0.50 -0.05 2.40 0.20 2.54TYP [2.54 0.20] 10.00 0.20 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2000 Fairchild Semiconductor International Rev. E