©2000 Fairchild Semiconductor International Rev. A, February 2000
KSD880
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current 3 A
IB Base Current 0.3 A
PC Collector Dissipation (TC=25°C) 30 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB = 60V, IE = 0 100 µA
IEBO Emitte r C u t-o ff C u rr e nt VEB = 7V, IC = 0 100 µA
BVCEO Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 60 V
hFE1
hFE2
DC Current Gain VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A 60
20 300
VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.3A 0.4 1 V
VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 0.5A 0.7 1 V
fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A 3 MHz
Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 70 pF
tON Turn ON Time VCC = 30V, IC = 1A
IB1 = - IB2 = 0.2A
RL = 30Ω
0.8 µs
tSTG Storage Time 1.5 µs
tF Fall Time 0.8 µs
Classification O Y G
hFE1 60 ~ 120 100 ~ 200 150 ~ 300
KSD880
Low Frequency Power Amplifier
• Complement to KSB834
1.Base 2.Collector 3.Emitter
1TO-220
©2000 Fairchild Semiconductor International
KSD880
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter On Voltage Figure 4. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 5. Safe Operating Area Figure 6. Power Derating
02468
0
1
2
3
4
IB = 0
IB = 10mA
IB = 20mA
IB = 30mA
IB = 40mA
IB = 50mA
IB = 80mA
IB = 70mA
IB = 90mA
IB = 60mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLE CT OR -E MITTER VOL TA G E
0.01 0.1 1 10
10
100
1000
VCE = 5V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
1
2
3
4
VCE = 5V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
0.01 0.1 1 10
0.01
0.1
1
10
IC = 10 IB
VCE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100
0.1
1
10
1s
100ms
10ms
VCEO MAX.
DC(TC=25℃)
IC(Continous) MAX.
1ms
IC(Pulse) MAX.
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
30
35
40
PC[W], POWE R DISSI PATIO N
TC[oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
KSD880
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
TRADEMARKS
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ACEx™
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E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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