Agilent 4N35
Phototransistor Optocoupler
General Purpose Type
Data Sheet
Features
• High Current Transfer Ratio
(CTR: min. 100% at IF = 10 mA,
VCE = 10 V)
• Response time (tr: typ., 3 µs at
VCE = 10 V, IC = 2 mA, RL = 100 Ω)
• Input-output isolation voltage
(Viso = 3550 Vrms)
• Dual-in-line package
• UL approved
• CSA approved
• VDE approved
• Options available:
– Leads with 0.4" (10.16 mm)
spacing (W00)
– Leads bends for surface
mounting (300)
– Tape and reel for SMD (500)
– VDE 0884 approvals (060)
Applications
• I/O interfaces for computers
• System appliances, measuring
instruments
• Signal transmission between
circuits of different potentials and
impedances
Description
The 4N35 is an optocoupler for
general purpose applications. It
contains a light emitting diode
optically coupled to a photo-
transistor. It is packaged in a 6-pin
DIP package and available in wide-
lead spacing option and lead bend
SMD option. Response time, tr, is
typically 3 µs and minimum CTR is
100% at input current of 10 mA.
Functional Diagram
Ordering Information
Specify part number followed by
Option Number (if desired).
4N35-XXX
Option Number
060 = VDE0884 Option
W00 = 0.4" Lead Spacing Option
300 = Lead Bend SMD Option
500 = Tape and Reel Packaging
Option
Schematic
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
654
123
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
1. ANODE
2. CATHODE
3. NC
4. EMITTER
5. COLLECTOR
6. BASE
1
2
ANODE
CATHODE
V
F
+
–
I
F
6
5
4
BASE
COLLECTOR
EMITTER
I
C
2
Package Outline Drawings
Package Outline – Option W00
Package Outline – Option 300
123
456
TYPE NUMBER
OPTION CODE
FOR OPTION 060
ONLY
PIN ONE DOT
DATE CODE
A 4N35 V
YYWW
6.5 ± 0.5
(0.256)
DIMENSIONS IN MILLIMETERS AND (INCHES)
7.3 ± 0.5
(0.287)
2.8 ± 0.5
(0.110)
2.54 ± 0.25
(0.1)
0.5 ± 0.1
(0.02)
3.5 ± 0.5
(0.138)
3.3 ± 0.5
(0.13)
0.5
(0.02)
7.62 ± 0.3
(0.3)
0.35 +0.15/-0.10
(0.14)
7.62 ~ 9.98
TYP.
6.5 ± 0.5
(0.256)
DIMENSIONS IN MILLIMETERS AND (INCHES)
7.3 ± 0.5
(0.287)
2.8 ± 0.5
(0.110)
2.54 ± 0.25
(0.1)
0.5 ± 0.1
(0.02)
3.5 ± 0.5
(0.138)
7.62 ± 0.3
(0.3)
0.35 +0.15/-0.10
(0.014)
10.16 ± 0.5
(0.4)
2.3 ± 0.5
(0.09)
6.9 ± 0.5
(0.272)
6.5 ± 0.5
(0.258)
DIMENSIONS IN MILLIMETERS AND (INCHES)
7.3 ± 0.5
(0.287)
2.54 ± 0.25
(0.1)
3.5 ± 0.5
(0.138)
7.62 ± 0.3
(0.3)
0.35 +0.15/-0.10
(0.014)
10.16 ± 0.3
(0.4)
1.2 ± 0.1
(0.047) 0.35 ± 0.25
(0.014) 1.0 ± 0.25
(0.039)
3
Absolute Maximum Ratings
Storage Temperature, TS–55˚C to +150˚C
Operating Temperature, TA–55˚C to +100˚C
Lead Solder Temperature, max. 260˚C for 10 s
(1.6 mm below seating plane)
Average Forward Current, IF60 mA
Reverse Input Voltage, VR6 V
Input Power Dissipation, PI100 mW
Collector Current, IC100 mA
Collector-Emitter Voltage, VCEO 30 V
Emitter-Collector Voltage, VECO 7 V
Collector-Base Voltage, VCBO 70 V
Collector Power Dissipation 300 mW
Total Power Dissipation 350 mW
Isolation Voltage, Viso (AC for 1 minute, R.H. = 40 ~ 60%) 3550 Vrms
* CTR = x 100%
IC
IF
Electrical Specifications (TA = 25˚C)
Parameter Symbol Min. Typ. Max. Units Test Conditions
Forward Voltage VF– 1.2 1.5 V IF = 10 mA
Reverse Current IR––10µAV
R
= 4 V
Terminal Capacitance Ct– 50 – pF V = 0, f = 1 KHz
Collector Dark Current ICEO ––50nAV
CE = 10 V, IF = 0, TA = 25˚C
– – 500 µAV
CE = 30 V, IF = 0, TA = 100˚C
Collector-Emitter Breakdown Voltage BVCEO 30 – V IC = 0.1 mA, IF = 0
Emitter-Collector Breakdown Voltage BVECO 7––VI
E
= 10 µA, IF = 0
Collector-Base Breakdown Voltage BVCBO 70 – – V IC = 0.1 mA, IF = 0
Collector Current IC10 – – mA IF = 10 mA
*Current Transfer Ratio CTR 100 – – % VCE = 10 V
Collector-Emitter Saturation Voltage VCE(sat) – – 0.3 V IF = 50 mA, IC = 2 mA
Response Time (Rise) tr–310µsV
CC = 10 V, IC = 2 mA
Response Time (Fall) tf–310µsR
L
= 100 Ω
Isolation Resistance Riso 5 x 1010 1 x 1011 –ΩDC 500 V
40 ~ 60% R.H.
Floating Capacitance Cf– 1 2.5 pF V = 0, f = 1 MHz
4
Figure 1. Forward current vs. temperature. Figure 2. Collector power dissipation vs.
temperature.
Figure 4. Current transfer ratio vs. forward
current.
Figure 5. Collector current vs. collector-
emitter voltage.
Figure 6. Relative current transfer ratio vs.
temperature.
Figure 7. Collector-emitter saturation
voltage vs. temperature.
Figure 8. Collector dark current vs.
temperature.
Figure 9. Response time vs. load resistance.
Figure 3. Forward current vs. forward voltage.
I
F
– FORWARD CURRENT – mA
0
T
A
– AMBIENT TEMPERATURE – °C
-25 75 125
60
25
20
40
100
0 50 100-55
80
P
C
– COLLECTOR POWER DISSIPATION – mW
0
T
A
– AMBIENT TEMPERATURE – °C
-25 75 125
200
25
100
400
0 50 100-55
300
I
F
– FORWARD CURRENT – mA
1
V
F
– FORWARD VOLTAGE – V
2.0 3.0
10
5
500
1.00
T
A
= 75°C
0.5 1.5 2.5
2
20
50
100
200 T
A
= 50°C
T
A
= 25°C
T
A
= 0°C
T
A
= -25°C
I
C
– COLLECTOR CURRENT – mA
0
V
CE
– COLLECTOR-EMITTER VOLTAGE – V
10 15
20
10
30
50
P
C
(MAX.)
T
A
= 25°C I
F
= 15 mA
I
F
= 10 mA
I
F
= 5 mA
I
F
= 2 mA
RELATIVE CURRENT TRANSFER RATIO – %
0
100
50
150
V
CE
= 10 V
I
F
= 10 mA
T
A
– AMBIENT TEMPERATURE – °C
-25 75250 50 100-55
V
CE(SAT.)
– COLLECTOR-EMITTER
SATURATION VOLTAGE – V
0
T
A
– AMBIENT TEMPERATURE – °C
-25 7525
0.04
0.12
0 50 100-55
0.08
0.02
0.06
0.10 I
C
= 2 mA
I
F
= 50 mA
RESPONSE TIME – µs
0.1
R
L
– LOAD RESISTANCE – kΩ
0.1 5
1
0.5
0.2
0.5
100
0.2 2 100.05
2
20 50
V
CE
= 10 V
I
C
= 2 mA
T
A
= 25°C
tf
tr
1
5
10
20
50
200
td
ts
I
CEO
– COLLECTOR DARK CURRENT – A
10
-13
-25 80 1254020 60 100-55
T
A
– AMBIENT TEMPERATURE – °C
V
CE
= 10 V
10
-12
10
-11
10
-10
10
-9
10
-8
10
-7
10
-6
5
5
5
5
5
5
5
CTR – CURRENT TRANSFER RATIO – %
0
I
F
– FORWARD CURRENT – mA
0.2 5 100
100
1
20
60
180
0.5 2 100.1
140
V
CE
= 10 V
T
A
= 25°C
20 50
500 kΩ100 kΩ
40
80
120
160
R
BE
=
5
V
CC
R
D
INPUT
R
L
OUTPUT
INPUT
OUTPUT 10%
90%
t
t t
t
d
f
s
r
Figure 11. Collector-emitter saturation
voltage vs. forward current.
Figure 10. Frequency response.
Test Circuit for Response Time Test Circuit for Frequency Response
VOLTAGE GAIN AV – dB
-20
f – FREQUENCY – kHz
1 20 500
-5
5
-15
-10
5
210500.5
0
100 200
R
L
= 10 kΩ
V
CE
= 5 V
I
C
= 2 mA
T
A
= 25°C
R
L
= 1 kΩ
R
L
= 100 Ω
0
I
F
– FORWARD CURRENT – mA
10 15
2
7
50
1
3
4
5
6
V
CE(SAT.)
– COLLECTOR-EMITTER
SATURATION VOLTAGE – V
T
A
= 25°C
I
C
= 0.5 mA
I
C
= 1 mA
I
C
= 2 mA
I
C
= 3 mA
I
C
= 6 mA
I
C
= 7 mA
V
CC
R
D
R
L
OUTPUT
~
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Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
October 19, 2001
5988-4114EN
