2SC3519/3519A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A) V VCB= VEBO 5 V IEBO IC 15 A V(BR)CEO IB 4 A hFE PC 130(Tc=25C) W VCE(sat) Tj 150 C fT -55 to +150 C COB VCB=10V, f=1MHz 180 160 V 50min IC=5A, IB=0.5A 2.0max V VCE=12V, IE=-2A 50typ MHz 250typ pF hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (s) tstg (s) tf (s) 40 4 10 10 -5 1 -1 0.2typ 1.3typ 0.45typ I B =20mA 0 0 1 2 3 0 4 0 0.2 0.4 0.6 0.8 h FE - I C Temperature Characteristics (Typical) (V C E =4V) DC Cur rent Gain h FE Typ 50 5 125C 100 25C -30C 50 10 0.02 10 15 0.1 Collector Current I C (A) 0.5 1 5 10 15 0.1 Co lle ctor Cu rr ent I C (A) ) mp Te nk Collector-Emitter Voltage V C E (V) 2 200 si 100 at -10 50 he -5 10 ite 1.2SC3519 2.2SC3519A fin Without Heatsink Natural Cooling 100 In 1 0.5 1 -1 1000 2000 ith M aximum Power Dissipa ti on P C (W) ms DC 5 0.05 5 100 P c - T a Derating 0.1 Emitter C urrent I E (A) 10 W 20 -0.1 1 Time t(ms) 10 0 -0.02 p) 0.5 130 10 40 se 1 40 Typ (Ca 3 Safe Operating Area (Single Pulse) 80 2 j-a - t Characteristics (V C E =12V) 60 1 Collector Current I C (A) f T - I E Characteristics (Typical) Cut-o ff F requ ency f T (MH Z ) DC Curr ent Gain h F E 100 Transient Thermal Resistance 300 300 1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 1.0 Base Current I B (A) h FE - I C Characteristics (Typical) 0.1 5 5A Collector-Emitter Voltage V C E (V) 10 0.02 em I C =10A 1 C 50mA eT 5 10 as 10 0m A 2 (C A C 200m 10 25 mA (V C E =4V) 5 300 1.4 E 15 3 12 A Collector Current I C (A) m 400 5.450.1 C I C - V BE Temperature Characteristics (Typical) j- a ( C/W) mA 0.65 +0.2 -0.1 Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) - I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0m Collector Current I C (A) 70 6 500 2 3 B RL () A o3.20.1 5.450.1 VCC (V) m 00 a 1.05 +0.2 -0.1 Typical Switching Characteristics (Common Emitter) 15 2.00.1 b VCE=4V, IC=5A I C - V CE Characteristics (Typical) 1.8 2.0 A 180min 160min 4.80.2 V 100max VEB=5V IC=25mA 15.60.4 9.6 -30 Tstg A C 180 ICBO Unit 4.0 V Conditions 19.90.3 160 Symbol External Dimensions MT-100(TO3P) 4.0max VCEO Unit (Ta=25C) Ratings 2SC3519 2SC3519A 100max 5.00.2 Electrical Characteristics Absolute maximum ratings (Ta=25C) Ratings Symbol 2SC3519 2SC3519A VCBO 160 180 Application : Audio and General Purpose 20.0min LAPT 50 Without Heatsink 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(C) 67