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FODM100x Series Single Channel, DC Sensing Input, Phototransistor Optocoupler In Stretched Body SOP 4-Pin Features Description * 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High Voltage Insulation The FODM100x Series, single channel, DC sensing input, optocoupler consists of one gallium arsenide (GaAs) infrared light emitting diode optically coupled to one phototransistor, in a stretched body SOP 4-pin package. The input-output isolation voltage, VISO, is rated at 5,000 VACRMS. * Safety and Regulatory Approvals * UL1577, 5,000 VACRMS for 1 min. * DIN_EN/IEC60747-5-5, 890 V_Peak Working Voltage * High Breakdown Collector to Emitter Voltage, BVCEO = 70 V minimum Applications * Primarily suited for DC-DC Converters * Extended Industrial Temperate Range, -40 to 110C * For ground loop isolation, signal to noise isolation * Current Transfer Ratio at IF = 5 mA, VCE = 5 V, TA = 25C * Communications - adapters, chargers * FODM1007: 80 to 160% * Industrial - power supplies, motor control, programmable logic control * FODM1008: 130 to 260% * Consumer - appliances, set top boxes * FODM1009: 200 to 400% Related Resources * www.onsemi.com/products/optoelectronics/ * www.onsemi.com/datasheets/HM/HMHA2801.pdf Schematic Package ANODE 1 CATHODE 2 4 COLLECTOR 3 EMITTER Figure 2. Package Outline Figure 1. Schematic (c)2016 Semiconductor Components Industries, LLC FODM100X Rev. 2 www.onsemi.com FODM100x Series Single Channel, DC Sensing Input, Phototransistor Optocoupler In Stretched Body SOP 4-Pin July 2018 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Characteristics Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I-IV < 300 VRMS I-III Climatic Classification 40/110/21 Pollution Degree (DIN VDE 0110/1.89) 2 175 Comparative Tracking Index Symbol VPR Parameter Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC Value Unit 1,426 Vpeak 1,671 Vpeak 890 Vpeak VIORM Maximum Working Insulation Voltage VIOTM Highest Allowable Over-Voltage 6,000 Vpeak External Creepage 8.0 mm External Clearance 8.0 mm Distance Through Insulation (Insulation Thickness) 0.4 mm Case Temperature(1) 150 C Input Current(1) 200 mA 300 mW > 109 DTI TS IS,INPUT PS,OUTPUT Output RIO Power(1) Insulation Resistance at TS, VIO = 500 V(1) Note: 1. Safety limit values - maximum values allowed in the event of a failure (c)2016 Semiconductor Components Industries, LLC FODM100X Rev. 2 www.onsemi.com 2 FODM100x Series Single Channel, DC Sensing Input, Phototransistor Optocoupler In Stretched Body SOP 4-Pin Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25C unless otherwise specified. Symbol Parameter Value Unit TOTAL PACKAGE TSTG Storage Temperature -55 to +150 C TOPR Operating Temperature -40 to +110 C Junction Temperature -40 to +125 C TJ EMITTER IF (avg) Continuous Forward Current 50 mA IF (pk) Peak Forward Current (1 s pulse, 300 pps) 1 A Reverse Input Voltage 6 V LED Power Dissipation @ TA = 25C (2) 100 mW Derate Above 25C 0.9 mW/C Continuous Collector Current 50 mA VCEO Collector-Emitter Voltage 70 V VECO Emitter-Collector Voltage 7 V 150 mW 1.47 mW/C VR PDLED DETECTOR IC PDC Detector Power Dissipation @ TA = 25C (2) Derate Above 25C Note: 2. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. (c)2016 Semiconductor Components Industries, LLC FODM100X Rev. 2 www.onsemi.com 3 FODM100x Series Single Channel, DC Sensing Input, Phototransistor Optocoupler In Stretched Body SOP 4-Pin Absolute Maximum Ratings TA = 25C unless otherwise specified. Individual Component Characteristics Symbol Parameter Device Test Conditions Min. Typ. Max. Unit 1.4 1.6 V 10 A EMITTER VF Forward Voltage All IF = 50 mA IR Reverse Current All VR = 4 V DETECTOR BVCEO Breakdown Voltage Collector to Emitter All IC = 1 mA, IF = 0 70 V BVECO Emitter to Collector All IE = 0.1 mA, IF = 0 7 V ICEO Collector Dark Current All VCE = 70 V, IF = 0 CCE Capacitance All VCE = 0 V, f = 1 MHz 100 nA 5 pF DC Transfer Characteristics Symbol Parameter Device Test Conditions FODM1007 CTR DC Current Transfer Ratio FODM1008 IF = 5 mA, VCE = 5 V FODM1009 VCE (SAT) Saturation Voltage All Min. Typ. Max. 80 160 130 260 200 400 IF = 10 mA, IC = 1 mA Unit % 0.3 V Typ. Max. Unit AC Transfer Characteristics Symbol Parameter Device Test Conditions Min. tr Rise Time (Non-Saturated) All IC = 2 mA, VCE = 5 V, RL = 100 5.7 18.0 tf Fall Time (Non-Saturated) All IC = 2 mA, VCE = 5 V, RL = 100 8.5 18.0 s Isolation Characteristics Symbol VISO Parameter Steady State Isolation Voltage (c)2016 Semiconductor Components Industries, LLC FODM100X Rev. 2 Device All Test Conditions Min. TA = 25 C, R.H. < 50%, 5,000 t = 1.0 minute, II-O 20 A Typ. Max. Unit VACRMS www.onsemi.com 4 FODM100x Series Single Channel, DC Sensing Input, Phototransistor Optocoupler In Stretched Body SOP 4-Pin Electrical Characteristics 1.6 DETECTOR EMITTER 100 50 0 -60 -40 -20 0 20 40 60 80 100 NORMALIZED TO: TA = 25C , VCE = 0.4 V 1.4 CTR (TA = 25C) 150 CTR (NORMALIZED) = CTR (TA) / PD - POWER DISSIPATION (mW) 200 1.2 1.0 IF = 10 mA IF = 5 mA 0.8 0.6 IF = 2 mA 0.4 IF = 1 mA 0.2 -60 120 -40 Figure 3. Power Dissipation vs. Ambient Temperature IF - FORWARD CURRENT (mA) IF = 10 mA IF = 5 mA 0.8 0.6 IF = 2 mA 0.4 0.2 -60 -40 -20 0 20 40 60 80 80 100 30 110C 25C -55C 20 10 0 0.6 100 0.8 1.0 1.2 1.4 1.6 1.8 VF - FORWARD VOLTAGE (V) Figure 6. Forward Current vs. Forward Voltage 10 100 TA = 25C 1 0.1 0.01 1 10 TA = 25C 1 0.1 0.01 0.1 100 1 10 100 IF - FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA) Figure 7. Normalized Current Collector vs. Forward Current (c)2016 Semiconductor Components Industries, LLC FODM100X Rev. 2 NORMALIZED TO: IF = 5 mA, VCE = 5V CTR (IF = 5 mA) NORMALIZED TO: IF = 5 mA, V = 5V CE CTR (NORMALIZED) = CTR (IF) / IC (NORMALIZED) = IC (IF) / IC (IF = 5 mA) 60 IF = 1 mA Figure 5. Non-Saturated Normalized Current Transfer Ratio vs. Ambient Temperature 0.001 0.1 40 40 TA - AMBIENT TEMPERATURE (C) 10 20 50 1.2 1.0 0 Figure 4. Saturated Normalized Current Transfer Ratio vs. Ambient Temperature NORMALIZED TO: TA = 25C , VCE = 5 V 1.4 CTR (TA = 25C) CTR (NORMALIZED) = CTR (TA) / 1.6 -20 TA - AMBIENT TEMPERATURE (C) TA - AMBIENT TEMPERATURE (C) Figure 8. Normalized Current Transfer Ratio vs. Forward Current www.onsemi.com 5 FODM100x Series Single Channel, DC Sensing Input, Phototransistor Optocoupler In Stretched Body SOP 4-Pin Typical Performance Characteristics IC - COLLECTOR CURRENT (mA) ICEO - COLLECTOR DARK CURRENT (nA) 1000 100000 10000 1000 VCE = 40 V 100 VCE = 20 V 10 1 0.1 20 40 60 80 100 TA = 25C 100 1 IF = 5 mA Figure 9. Collector Dark Current vs. Ambient Temperature IF = 1 mA 1 10 Figure 10. Collector Current vs. Collector Emitter Voltage 10 40 NON-SATURATED OPERATION VS = 5 V, RL = 100 : tON / tOFF - TURN ON / OFF TIME (s) tON / tOFF - TURN ON / OFF TIME (s) IF = 2 mA VCE - COLLECTOR EMITTER VOLTAGE (V) TA - AMBIENT TEMPERATURE (C) 8 6 4 tON 2 tOFF 0 IF = 50 mA 10 0.1 0.1 120 IF = 20 mA IF = 10 mA 0 4 8 12 16 20 25 20 15 10 5 tON 0 4 8 12 16 20 IF - FORWARD CURRENT (mA) Figure 11. Turn On/ Turn Off Time vs. Collector Current (c)2016 Semiconductor Components Industries, LLC FODM100X Rev. 2 tOFF 30 0 IC - COLLECTOR CURRENT (mA) SATURATED OPERATION VS = 5 V, RL = 1 k: 35 Figure 12. Turn On/ Turn Off Time vs. Forward Current www.onsemi.com 6 FODM100x Series Single Channel, DC Sensing Input, Phototransistor Optocoupler In Stretched Body SOP 4-Pin Typical Performance Characteristics (Continued) FODM100x Series Single Channel, DC Sensing Input, Phototransistor Optocoupler In Stretched Body SOP 4-Pin Reflow Profile Maximum Ramp-up Rate = 3C/s Maximum Ramp-down Rate = 6C/s Temperature (C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 tP Tsmax tL Preheat Area Tsmin ts 120 240 360 Time 25C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Minimum (Tsmin) 150C Temperature Maximum (Tsmax) 200C Time (tS) from (Tsmin to Tsmax) 60 s to 120 s Ramp-up Rate (tL to tP) 3C/second maximum Liquidous Temperature (TL) 217C Time (tL) Maintained Above (TL) 60 s to 150 s Peak Body Package Temperature 260C +0C / -5C Time (tP) within 5C of 260C 30 s Ramp-Down Rate (TP to TL) 6C/s maximum Time 25C to Peak Temperature 8 minutes maximum Figure 13. Reflow Profile (c)2016 Semiconductor Components Industries, LLC FODM100X Rev. 2 www.onsemi.com 7 Part Number Package Packing Method FODM1007 Stretched Body SOP 4-Pin Tube (100 units per tube) FODM1007R2 Stretched Body SOP 4-Pin Tape and Reel (3,000 units per reel) FODM1007V FODM1007R2V Stretched Body SOP 4-Pin, Tube (100 units per tube) DIN EN/IEC60747-5-5 Option Stretched Body SOP 4-Pin, Tape and Reel (3,000 units per reel) DIN EN/IEC60747-5-5 Option Note: 2. The product orderable part number system listed in this table also applies to the FODM1008, and FODM1009 products. Marking Information 1 1 0 0 7 X YY L V 3 2 6 5 4 Definitions 1 Fairchild Logo 2 Device Number, e.g. 1007 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 Last Digit Year Code, e.g. `6' 5 Two Digit Work Week Ranging from `01' to `53' 6 Assembly Package Code (c)2016 Semiconductor Components Industries, LLC FODM100X Rev. 2 www.onsemi.com 8 FODM100x Series Single Channel, DC Sensing Input, Phototransistor Optocoupler In Stretched Body SOP 4-Pin Ordering Information 4 2.79 2.29 3 4 3 0.90 7.80 7.20 PIN #1 IDENT. 9.50 2.54 1.30 2 1 1 2 TOP VIEW LAND PATTERN RECOMMENDATION 4.10 3.50 8.88 8.28 0.20 TYP 2.20 1.80 0.20 0.00 0.50 0.30 FRONT VIEW 0.5 MIN 10.40 9.80 SIDE VIEW NOTES: A. NO INDUSTRY STANDARD APPLIES TO THIS PACKAGE B. ALL DIMENSIONS ARE IN MILLIMETERS C. DIMENSIONS DO NOT INCLUDE MOLD FLASH OR BURRS D. DRAWING FILENAME: MKT-LSOP04Arev1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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