BSP 315 SIPMOS (R) Small-Signal Transistor * P channel * Enhancement mode * Logic Level * VGS(th) = -0.8...-2.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 315 -50 V -1.1 A 0.8 SOT-223 BSP 315 Type BSP 315 BSP 315 Ordering Code Q67000-S75 Q67000-S249 D Tape and Reel Information E6327 E6433 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage RGS = 20 k -50 Unit V -50 Gate source voltage VGS Continuous drain current ID TA = 39 C 20 A -1.1 IDpuls DC drain current, pulsed TA = 25 C -4.4 Ptot Power dissipation TA = 25 C Semiconductor Group Values W 1.8 1 Sep-12-1996 BSP 315 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA 70 Therminal resistance, junction-soldering point 1) RthJS 10 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = -0.25 mA, Tj = 25 C V -50 - - -0.8 -1.1 -2 VDS = -50 V, VGS = 0 V, Tj = 25 C - -0.1 -1 VDS = -50 V, VGS = 0 V, Tj = 125 C - -10 -100 VDS = -30 V, VGS = 0 V, Tj = 25 C - - -100 Gate threshold voltage VGS(th) VGS=VDS, ID = -1 mA Zero gate voltage drain current Gate-source leakage current IDSS IGSS VGS = -20 V, VDS = 0 V Drain-Source on-state resistance Semiconductor Group -10 -100 RDS(on) - 2 nA nA - VGS = -10 V, ID = -1.1 A A 0.65 0.8 Sep-12-1996 BSP 315 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = -1.1 A Input capacitance 0.25 pF - 300 400 - 150 230 - 85 130 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 0.7 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Rise time - 8 12 - 35 55 - 80 110 - 140 190 tr VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Turn-off delay time td(off) VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Fall time tf VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Semiconductor Group 3 Sep-12-1996 BSP 315 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 C Inverse diode direct current,pulsed - -1.1 - - -4.4 VSD VGS = 0 V, IF = -2.2 A, Tj = 25 C Semiconductor Group - ISM TA = 25 C Inverse diode forward voltage A V - 4 -1.2 -1.5 Sep-12-1996 BSP 315 Power dissipation Ptot = (TA) Ptot Drain current ID = (TA) parameter: VGS -10 V 2.0 -1.2 W A -1.0 1.6 ID -0.9 1.4 -0.8 1.2 -0.7 1.0 -0.6 0.8 -0.5 -0.4 0.6 -0.3 0.4 -0.2 0.2 -0.1 0.0 0.0 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 TA 120 C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = (tp) parameter: D = tp / T parameter : D = 0, TC=25C 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 315 Typ. output characteristics ID = (VDS) parameter: tp = 80 s -2.6 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 2.6 Ptot = 2W A lk j i -2.2 ID a h a -2.0 RDS (on) b -2.5 c -3.0 -1.8 c d e f 2.2 g VGS [V] -2.0 b 2.0 1.8 f d -3.5 -1.6 1.6 e -4.0 f -1.4 e -1.2 -4.5 1.4 g -5.0 1.2 h -6.0 -1.0 i -7.0 j -8.0 g 1.0 h d k -9.0 -0.8 l -10.0 c -0.6 -0.4 0.8 k j 0.6 0.4 b a -0.2 i VGS [V] = 0.2 0.0 a b c d e f -2.0 -3.0 -3.5 -4.0 -4.5 -5.0 -2.5 g h i j k -6.0 -7.0 -8.0 -9.0 -10.0 0.0 0.0 -1.0 -2.0 -3.0 -4.0 V -6.0 0.0 -0.4 -0.8 -1.2 -1.6 VDS A -2.4 ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, -6.0 1.1 A S -5.0 ID gfs -4.5 0.9 0.8 -4.0 0.7 -3.5 0.6 -3.0 0.5 -2.5 0.4 -2.0 0.3 -1.5 -1.0 0.2 -0.5 0.1 0.0 0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 VGS Semiconductor Group 6 0.0 -1.0 -2.0 -3.0 -4.0 A ID -5.5 Sep-12-1996 BSP 315 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = -1.1 A, VGS = -10 V Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = -1 mA 2.4 -4.6 V -4.0 2.0 RDS (on) VGS(th) 1.8 -3.6 -3.2 1.6 -2.8 1.4 -2.4 1.2 98% 98% -2.0 1.0 typ 0.8 -1.6 0.6 -1.2 0.4 -0.8 0.2 -0.4 typ 2% 0.0 0.0 -60 -20 20 60 100 C 160 -60 -20 20 60 100 Tj C 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 4 -10 1 pF A C IF 10 3 -10 0 Ciss Coss 10 2 -10 -1 Tj = 25 C typ Crss Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 -5 -10 Semiconductor Group -15 -20 -25 -30 V VDS -40 -10 -2 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD 7 Sep-12-1996 BSP 315 Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = (Tj ) parameter : D = 0.01, TC=25C -60 V -58 V(BR)DSS-57 -56 -55 -54 -53 -52 -51 -50 -49 -48 -47 -46 -45 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 Sep-12-1996 BSP 315 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996