Semiconductor Group 1 Sep-12-1996
BSP 315
SIPMOS ® Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• V
GS(th) = -0.8...-2.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type
V
DS
I
D
R
DS(on) Package Marking
BSP 315 -50 V -1.1 A 0.8 ΩSOT-223 BSP 315
Type Ordering Code Tape and Reel Information
BSP 315 Q67000-S75 E6327
BSP 315 Q67000-S249 E6433
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage
V
DS -50 V
Drain-gate voltage
R
GS = 20 kΩ
V
DGR -50
Gate source voltage
V
GS ± 20
Continuous drain current
T
A = 39 °C
I
D -1.1 A
DC drain current, pulsed
T
A = 25 °C
I
Dpuls -4.4
Power dissipation
T
A = 25 °C
P
tot 1.8 W
Semiconductor Group 2 Sep-12-1996
BSP 315
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature
T
j -55 ... + 150 °C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip to ambient air
R
thJA ≤ 70 K/W
Therminal resistance, junction-soldering point 1)
R
thJS ≤ 10
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = -0.25 mA,
T
j = 25 °C
V
(BR)DSS -50 - - V
Gate threshold voltage
V
GS=
V
DS,
I
D = -1 mA
V
GS(th) -0.8 -1.1 -2
Zero gate voltage drain current
V
DS = -50 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = -50 V,
V
GS = 0 V,
T
j = 125 °C
V
DS = -30 V,
V
GS = 0 V,
T
j = 25 °C
I
DSS
-
-
-
-
-10
-0.1
-100
-100
-1 µA
nA
Gate-source leakage current
V
GS = -20 V,
V
DS = 0 V
I
GSS - -10 -100 nA
Drain-Source on-state resistance
V
GS = -10 V,
I
D = -1.1 A
R
DS(on) - 0.65 0.8 Ω
Semiconductor Group 3 Sep-12-1996
BSP 315
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS≥ 2 *
I
D *
R
DS(on)max,
I
D = -1.1 A
g
fs 0.25 0.7 - S
Input capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
iss - 300 400 pF
Output capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
oss - 150 230
Reverse transfer capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
rss - 85 130
Turn-on delay time
V
DD = -30 V,
V
GS = -10 V,
I
D = -0.29 A
R
GS = 50 Ω
t
d(on)
- 8 12
ns
Rise time
V
DD = -30 V,
V
GS = -10 V,
I
D = -0.29 A
R
GS = 50 Ω
t
r
- 35 55
Turn-off delay time
V
DD = -30 V,
V
GS = -10 V,
I
D = -0.29 A
R
GS = 50 Ω
t
d(off)
- 80 110
Fall time
V
DD = -30 V,
V
GS = -10 V,
I
D = -0.29 A
R
GS = 50 Ω
t
f
- 140 190
Semiconductor Group 4 Sep-12-1996
BSP 315
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
A = 25 °C
I
S- - -1.1 A
Inverse diode direct current,pulsed
T
A = 25 °C
I
SM - - -4.4
Inverse diode forward voltage
V
GS = 0 V,
I
F = -2.2 A,
T
j = 25 °C
V
SD - -1.2 -1.5 V
Semiconductor Group 5 Sep-12-1996
BSP 315
Power dissipation
P
tot = ƒ(
T
A)
020 40 60 80 100 120 °C 160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
2.0
P
tot
Drain current
I
D = ƒ(
T
A)
parameter:
V
GS ≥ -10 V
020 40 60 80 100 120 °C 160
T
A
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
A
-1.2
I
D
Safe operating area
I
D=f(
V
DS)
parameter :
D
= 0,
T
C=25°C Transient thermal impedance
Z
th JA = ƒ(
t
p)
parameter:
D = t
p /
T
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJC
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 6 Sep-12-1996
BSP 315
Typ. output characteristics
I
D = ƒ(
V
DS)
parameter:
t
p = 80 µs
0.0 -1.0 -2.0 -3.0 -4.0 V -6.0
V
DS
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-2.2
A
-2.6
I
D
V
GS [V]
a
a -2.0
b
b -2.5
c
c -3.0
d
d -3.5
e
e -4.0
f
f -4.5
g
g -5.0
h
h -6.0
i
i -7.0
j
j -8.0
k
k -9.0
l
P
tot = 2W
l -10.0
Typ. drain-source on-resistance
R
DS (on) = ƒ(
I
D)
parameter:
t
p = 80 µs,
T
j = 25 °C
0.0 -0.4 -0.8 -1.2 -1.6 A -2.4
I
D
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Ω
2.6
R
DS (on)
V
GS [V] =
a
-2.0
V
GS [V] =
a
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-6.0
h
h
-7.0
i
i
-8.0
j
j
-9.0
k
k
-10.0
Typ. transfer characteristics
I
D
= f
(
V
GS)
parameter:
t
p = 80 µs
0-1 -2 -3 -4 -5 -6 -7 -8 V -10
V
GS
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
A
-6.0
I
D
Typ. forward transconductance
g
fs =
f
(
I
D)
parameter:
t
p = 80 µs,
0.0 -1.0 -2.0 -3.0 -4.0 A -5.5
I
D
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
S
1.1
g
fs
7 Sep-12-1996
Semiconductor Group
BSP 315
Drain-source on-resistance
R
DS (on) = ƒ(
T
j)
parameter:
I
D = -1.1 A,
V
GS = -10 V
-60 -20 20 60 100 °C 160
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Ω
2.4
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th) = ƒ(
T
j)
parameter:
V
GS =
V
DS,
I
D = -1 mA
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-3.6
-4.0
V
-4.6
V
GS(th)
-60 -20 20 60 100 °C 160
T
j
2%
typ
98%
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS=0V,
f
= 1 MHz
0-5 -10 -15 -20 -25 -30 V -40
V
DS
1
10
2
10
3
10
4
10
pF
C
C
rss
C
iss
C
oss
Forward characteristics of reverse diode
I
F = ƒ(
V
SD)
parameter:
T
j
, t
p = 80 µs
-2
-10
-1
-10
0
-10
1
-10
A
I
F
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0
V
SD
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
Semiconductor Group 8 Sep-12-1996
BSP 315
Drain-source breakdown voltage
V
(BR)DSS = ƒ(
T
j)
-60 -20 20 60 100 °C 160
T
j
-45
-46
-47
-48
-49
-50
-51
-52
-53
-54
-55
-56
-57
-58
V
-60
V
(BR)DSS
Safe operating area
I
D=f(
V
DS)
parameter :
D
= 0.01,
T
C=25°C
Semiconductor Group 9 Sep-12-1996
BSP 315
Package outlines
SOT-223
Dimensions in mm
