•Epitaxial Die Construction
•Complementary NPN Type Available
(BC847BLP)
•Ultra-Small Leadless Surface Mount Package
•Lead Free By Design/RoHS Compliant (Note 1)
•"Green" Device (Note 2)
Lead-free Green
DS30526 Rev. 7 - 2 1 of 4 BC857BLP
www.diodes.com Diodes Incorporated
BC857BLP
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC-100 mA
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Maximum Ratings @ TA = 25°C unless otherwise specified
Features
Mechanical Data
•Case: DFN1006-3
•Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification
Rating 94V-0
•Moisture Sensitivity: Level 1 per J-STD-020C
•Terminal Connections Indicator: Collector Dot
•Terminals: Finish NiPdAu annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
•Ordering Information: See Page 3
•Marking Code 3W, Dot denotes Collector Side
•Weight: 0.001 grams
D
GH
BC
L
N
A
M
K
CE
B
12
3
DFN1006-3
Dim Min Max Typ
A0.95 1.075 1.00
B0.55 0.675 0.60
C0.45 0.55 0.50
D0.20 0.30 0.25
G0.47 0.53 0.50
H0 0.05 0.03
K0.10 0.20 0.15
L0.20 0.30 0.25
M 0.35
N 0.40
All Dimensions in mm
TOP VIEW
Thermal Characteristi cs @ TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation Pd250 mW
Thermal Resistance, Junction to Ambient RθJA 400 °C/W
TCUDORP WEN
SPICE MODEL: BC857BLP
DS30526 Rev. 7 - 2 2 of 4 BC857BLP
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Electrical Characteristics
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 3) V(BR)CBO -50 ——VIC = 10µA, IB = 0
Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO -45 ——VIC = 10mA, IB = 0
Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO -5 ——VIE = 1µA, IC = 0
DC Current Gain (Note 3) hFE 220 260 475 — VCE = -5.0V, IC = -2.0mA
Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) —90
250 -300
-650 mV IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Saturation Voltage (Note 3) VBE(SAT) —
—-700
-850 —
—mV IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Voltage (Note 3) VBE(ON) -600
—-670
-710 -750
-820 mV VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
Collector-Cutoff Current (Note 3) ICBO —
——
—-15
-4.0 nA
µA VCB = -30V
VCB = -30V, TA = 150°C
Gain Bandwidth Product fT100 — — MHz VCE = -5.0V, IC = -10mA,
f = 100MHz
Collector-Base Capacitance CCBO —3.0 — pF VCB = -10V, f = 1.0MHz
@ TA = 25°C unless otherwise specified
0
150
100
50
200
250
300
350
1100
10
I , COLLECTOR CURRENT (mA)
C
Fig. 2 Typical Collector-Emitter Saturation
Voltage vs. Collector Current
V , COLLECTOR TO EMITTER
(CE)SAT
SATURATION VOLTAGE (mV)
Ic/Ib=20
T = 150ºC
A
T = -55ºC
A
T = 25ºC
A
T = 85ºC
A
T = 125ºC
A
0
50
100
0 25 50 75 100 125 150
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERA TURE (°C)
AFig. 1 Power Derating Curve
150
200
250
300
TCUDORP WEN
Note: 3. Short duration pulse test used to minimize self-heating effect.
DS30526 Rev. 7 - 2 3 of 4 BC857BLP
www.diodes.com
3W
Marking Information
3W = Product Type Marking Code,
Dot Denotes Collector Side
Note: 4. For Packaging Details: go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Ordering Information
Device Packaging Shipping
BC857BLP-7 DFN1006-3 3000/Tape & Reel
(Note 4)
V , BASE-EMITTER ON VOLTAGE (mV)
BE(ON)
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
200
400
600
800
0246810
V = 5V
CE
T = -55ºC
A
T = 150ºC
A
T = 125ºC
A
T = 25ºC
A
T = 85ºC
A
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
V , BASE TO EMITTER SATURATION
(BE)SAT
VOLTAGE (V)
1100
10
Ic/Ib=20
T = 150ºC
A
T = -55ºC
A
T = 125ºC
A
T = 25ºC
A
T = 85ºC
A
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical DC Current Gain
vs. Collector Current
1,000
1
10
100
1,000
110 100
T = 150ºC
A
T = -55ºC
A
T = 85ºC
A
T = 25ºC
A
T = 125ºC
A
TCUDORP WEN
DS30526 Rev. 7 - 2 4 of 4 BC857BLP
www.diodes.com
TCUDORP WEN
Suggested Pad Layout
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
0.30
1.30
R = 0.05 (12x) R = 0.05 (12x)
0.30
(2x)
0.40
(2x)
0.50
(2x)
0.30
0.90 0.20
Dimensions in mm.
0.40
0.50
0.60 0.70 0.80
solder lands
solder resist
occupied area
solder paste
0.25
0.35
(2x)
(2x)
