PD -95961A IRFH5006PbF HEXFET(R) Power MOSFET VDS 60 V RDS(on) max 4.1 m Qg (typical) 69 nC RG (typical) 1.2 (@VGS = 10V) ID 100 (@Tc(Bottom) = 25C) h A PQFN 5X6 mm Applications * * * * Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 4.1m) Low Thermal Resistance to PCB ( 0.5C/W) 100% Rg tested Low Profile ( 0.9 mm) results in Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRFH5006TRPBF IRFH5006TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 1000 Note Absolute Maximum Ratings VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC(Bottom) = 25C ID @ TC(Bottom) = 100C IDM PD @TA = 25C PD @ TC(Bottom) = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range g g c g h h Max. 60 20 21 17 100 100 400 3.6 250 Units 0.029 -55 to + 150 W/C V A W C Notes through are on page 8 www.irf.com 1 09/23/11 IRFH5006PbF Static @ TJ = 25C (unless otherwise specified) gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Min. 60 --- --- 2.0 --- --- --- --- --- 92 --- --- --- --- --- --- --- Typ. --- 0.07 3.5 --- -8.0 --- --- --- --- --- 69 12 6.8 20 30.2 26.8 23 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 4.1 m VGS = 10V, ID = 50A 4.0 V VDS = VGS, ID = 150A --- mV/C 20 VDS = 60V, VGS = 0V A 250 VDS = 60V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V --- S VDS = 25V, ID = 50A 104 VDS = 30V --- --- VGS = 10V nC ID = 50A --- --- See Fig.17 & 18 --- --- nC VDS = 16V, VGS = 0V RG td(on) tr td(off) tf Ciss Coss Crss Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- --- --- --- --- --- 1.2 9.6 13 30 12 4175 550 255 --- --- --- --- --- --- --- --- BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current e ns pF VDD = 30V, VGS = 10V ID = 50A RG=1.8 See Fig.15 VGS = 0V VDS = 30V = 1.0MHz Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current c Typ. --- --- d Max. 285 50 Units mJ A Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units h --- --- 100 c --- --- 400 A Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25C, IS = 50A, VGS = 0V TJ = 25C, IF = 50A, VDD = 30V di/dt = 500A/s --- --- 1.3 V --- 28 42 ns --- 130 195 nC Time is dominated by parasitic Inductance S e e Thermal Resistance RJC (Bottom) RJC (Top) RJA RJA (<10s) 2 f f Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient Parameter g g Typ. --- --- --- --- Max. 0.5 15 35 22 Units C/W www.irf.com IRFH5006PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V 3.8V 100 10 1 3.8V BOTTOM 10 3.8V 60s PULSE WIDTH 60s PULSE WIDTH Tj = 150C Tj = 25C 0.1 0.1 1 1 10 0.1 100 Fig 1. Typical Output Characteristics 10 100 Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 100 T J = 150C 10 TJ = 25C 1 VDS = 25V 60s PULSE WIDTH 0.1 ID = 50A VGS = 10V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 2 3 4 5 6 7 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 100000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 50A C oss = C ds + C gd 10000 Ciss Coss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) VGS 10V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V 3.8V Crss 100 12.0 VDS= 48V VDS= 30V 10.0 VDS= 12V 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 10 20 30 40 50 60 70 80 90 100 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRFH5006PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 150C 100 T J = 25C 10 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 1msec 100 10msec 10 VGS = 0V 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 200 4.0 VGS(th) , Gate threshold Voltage (V) Limited By Package ID, Drain Current (A) DC Tc = 25C Tj = 150C Single Pulse 150 100 50 0 3.5 3.0 2.5 ID = 150A ID = 500A ID = 1.0mA ID = 1.0A 2.0 1.5 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (C) 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Thermal Response ( Z thJC ) C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com 10 1200 ID = 50A EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) IRFH5006PbF 9 ID 7.9A 14A BOTTOM 50A TOP 1000 8 7 T J = 125C 6 5 T J = 25C 4 3 800 600 400 200 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting T J , Junction Temperature (C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width 1 s Duty Factor 0.1 Fig 15a. Switching Time Test Circuit www.irf.com I AS 0.01 tp 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms 5 IRFH5006PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 Qgd Qgodr Fig 18. Gate Charge Waveform www.irf.com IRFH5006PbF PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRFH5006PbF PQFN 5x6 Outline "B" Tape and Reel Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Indus trial (per JE DE C JE S D47F PQFN 5mm x 6mm guidelines ) MS L1 (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.23mH, RG = 25, IAS = 50A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2011 8 www.irf.com