IRFH5006PbF
2www.irf.com
Thermal Resistance
Parameter Typ. Max. Units
θJC
––– 0.5
θJC
––– 15 °C/W
θJA
––– 35
θJA
––– 22
D
S
G
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V
DSS
J
Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C
DS(on)
Static Drain-to-Source On-Resistance ––– 3.5 4.1
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
GS(th)
Gate Threshold Voltage Coefficient ––– -8.0 ––– mV/°C
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 92 ––– ––– S
g
Total Gate Charge ––– 69 104
gs1
Pre-Vth Gate-to-Source Charge ––– 12 –––
gs2
Post-Vth Gate-to-Source Charge ––– 6.8 –––
gd
Gate-to-Drain Charge ––– 20 –––
godr
Gate Charge Overdrive ––– 30.2 ––– See Fig.17 & 18
sw
gs2
gd
––– 26.8 –––
oss
Output Charge ––– 23 ––– nC
R
G
Gate Resistance ––– 1.2 –––
d(on)
Turn-On Delay Time ––– 9.6 –––
r
Rise Time ––– 13 –––
d(off)
Turn-Off Delay Time ––– 30 –––
f
Fall Time ––– 12 –––
iss
Input Capacitance ––– 4175 –––
oss
Output Capacitance ––– 550 –––
rss
Reverse Transfer Capacitance ––– 255 –––
Avalanche Characteristics
Parameter Units
AS
Single Pulse Avalanche Energy
mJ
AR
A
Parameter Min. Typ. Max. Units
S
Continuous Source Current
(Body Diode)
h
SM
Pulsed Source Current
(Body Diode)
c
SD
Diode Forward Voltage ––– ––– 1.3 V
rr
Reverse Recovery Time ––– 28 42 ns
rr
Reverse Recovery Charge ––– 130 195 nC
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
GS
= 10V
Typ.
–––
R
G
=1.8Ω
V
DS
= 25V, I
D
= 50A
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
mΩ
μA
I
D
= 50A
T
J
= 25°C, I
F
= 50A, V
DD
= 30V
e
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
V
GS
= 20V
V
GS
= -20V
V
DS
= 60V, V
GS
= 0V
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 30V, V
GS
= 10V
I
D
= 50A
V
GS
= 0V
V
DS
= 30V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
e
pF
nC
Conditions
See Fig.15
Max.
285
50
ƒ = 1.0MHz
V
DS
= 30V
–––
V
DS
= V
GS
, I
D
= 150μA
A
100
––– ––– 400
––– –––
nA
ns