SEMICONDUCTOR TIP127 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES *High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. *High Collector Breakdown Voltage : VCEO=-120V(Min.) MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEB0 -5 V DC IC -5 Pules ICP -8 IB -0.12 A PC 65 W Tj 150 Tstg -55150 Collector Current A Base Current Collector Power Dissipation (Tc=25) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-100V, IE=0 - - -1 mA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -2 mA V(BR)CEO IC=-10mA, IB=0 -120 - - V hFE(1) VCE=-3V, IC=-0.5A 1000 - - hFE(2) VCE=-3V, IC=-3A 1000 - - VCE(sat)(1) IC=-3A, IB=-12mA - - -2 VCE(sat)(2) IC=-5A, IB=-20mA - - -4 Base-Emitter Voltage VBE VCE=-3V, IC=-3A - - -2.5 V Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 300 pF Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage 1999. 11. 16 V Revision No : 1 1/2 TIP127 1999. 11. 16 Revision No : 1 2/2