1999. 11. 16 1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP127
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
APPLICATIONS.
FEATURES
·High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A.
·High Collector Breakdown Voltage : VCEO=-120V(Min.)
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -120 V
Collector-Emitter Voltage VCEO -120 V
Emitter-Base Voltage VEB0 -5 V
Collector Current
DC IC-5
A
Pules ICP -8
Base Current IB-0.12 A
Collector Power Dissipation
(Tc=25℃)PC65 W
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-100V, IE=0 - - -1 mA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -2 mA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -120 - - V
DC Current Gain
hFE(1) VCE=-3V, IC=-0.5A 1000 - -
hFE(2) VCE=-3V, IC=-3A 1000 - -
Collector-Emitter Saturation Voltage
VCE(sat)(1) IC=-3A, IB=-12mA - - -2
V
VCE(sat)(2) IC=-5A, IB=-20mA - - -4
Base-Emitter Voltage VBE VCE=-3V, IC=-3A - - -2.5 V
Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 300 pF
EQUIVALENT CIRCUIT
1999. 11. 16 2/2
TIP127
Revision No : 1
